公开(公告)号：US10811843B2

公开(公告)日：2020-10-20

申请号：US15761419

申请日：2016-09-27

Applicant: OSRAM OLED GMBH

Inventor： Sven Gerhard ,  Alfred Lell ,  Clemens Vierheilig ,  Andreas Loeffler ,  Christoph Eichler

IPC: H01S5/16 ,  H01S5/028 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

Abstract: The disclosure relates to a semiconductor laser includes a semiconductor layer sequence with an-n-type n-region, a p-type p-region and an active zone lying between the two for the purpose of generating laser radiation. A p-contact layer that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region for the purpose of current input. An electrically-conductive metallic p-contact structure is applied directly to the p-contact layer. The p-contact layer is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer during operation of the semiconductor laser. Two facets of the semiconductor layer sequence form resonator end surfaces for the laser radiation.

公开(公告)号：US10784653B2

公开(公告)日：2020-09-22

申请号：US16079678

申请日：2017-02-23

Applicant: OSRAM OLED GmbH

Inventor： Andreas Loeffler ,  Clemens Vierheilig ,  Sven Gerhard

IPC: H01S5/22 ,  H01S5/40 ,  H01L25/16 ,  H01L33/00 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/343 ,  H01S5/323 ,  H01S5/227

Abstract: A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.

公开(公告)号：US11557698B2

公开(公告)日：2023-01-17

申请号：US16072865

申请日：2017-01-17

Applicant: OSRAM OLED GMBH

Inventor： Andreas Loeffler ,  Adam Bauer ,  Matthias Peter ,  Michael Binder

IPC: H01L33/22 ,  H01L33/50 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32

Abstract: Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.

公开(公告)号：US11165223B2

公开(公告)日：2021-11-02

申请号：US16890776

申请日：2020-06-02

Applicant: OSRAM OLED GMBH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Loeffler

IPC: H01S5/06 ,  H01L33/50 ,  H01S5/00 ,  F21K9/64 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34 ,  H01L33/18 ,  F21Y115/30

Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.

公开(公告)号：US20200303898A1

公开(公告)日：2020-09-24

申请号：US16890776

申请日：2020-06-02

Applicant: OSRAM OLED GMBH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Loeffler

IPC: H01S5/06 ,  H01L33/50 ,  F21K9/64 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34

Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.

公开(公告)号：US11004876B2

公开(公告)日：2021-05-11

申请号：US16528307

申请日：2019-07-31

Applicant: OSRAM OLED GMBH

Inventor： Christoph Eichler ,  Andre Somers ,  Harald Koenig ,  Bernhard Stojetz ,  Andreas Loeffler ,  Alfred Lell

IPC: H01L21/66 ,  H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01S5/22 ,  H01L33/02 ,  H01L33/00 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/324 ,  H01S5/20 ,  H01S5/223 ,  H01L33/08 ,  H01L33/12

Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

公开(公告)号：US10811582B2

公开(公告)日：2020-10-20

申请号：US15737738

申请日：2016-06-15

Applicant: OSRAM OLED GmbH

Inventor： Andreas Loeffler ,  Thomas Hager ,  Christoph Walter ,  Alfred Lell

IPC: H01L33/64 ,  H01L25/16 ,  H01L31/02 ,  H01L31/024 ,  H01L31/167 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022 ,  H01S5/024 ,  H01L31/0232 ,  H01L33/58 ,  H01S5/00

Abstract: An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon.