公开(公告)号：US11329199B2

公开(公告)日：2022-05-10

申请号：US16762056

申请日：2019-01-24

Applicant: OSRAM OLED GmbH

Inventor： Britta Göötz ,  Matthias Hien ,  Andreas Dobner ,  Peter Brick ,  Matthias Goldbach ,  Uli Hiller ,  Sebastian Stigler

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/60

Abstract: An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

公开(公告)号：US20200343419A1

公开(公告)日：2020-10-29

申请号：US16762056

申请日：2019-01-24

Applicant: OSRAM OLED GmbH

Inventor： Britta Göötz ,  Matthias Hien ,  Andreas Dobner ,  Peter Brick ,  Matthias Goldbach ,  Uli Hiller ,  Sebastian Stigler

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/60

Abstract: An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

公开(公告)号：US11462500B2

公开(公告)日：2022-10-04

申请号：US16962175

申请日：2019-01-23

Applicant: OSRAM OLED GmbH

Inventor： Matthias Hien ,  Matthias Goldbach ,  Michael Zitzlsperger ,  Ludwig Peyker

IPC: H01L23/00 ,  H01L25/04 ,  H01L25/075 ,  H01L25/16 ,  H01L31/02 ,  H01L33/62 ,  H01L31/0203 ,  H01L33/52 ,  H01L33/60

Abstract: In one embodiment, an optoelectronic semiconductor device includes at least two lead frame parts and an optoelectronic semiconductor chip which is mounted in a mounting region on one of the lead frame parts. The lead frame parts are mechanically connected to one another via a casting body. The semiconductor chip is embedded in the cast body. In the mounting region the respective lead frame part has a reduced thickness. An electrical line is led over the cast body from the semiconductor chip to a connection region of the other of the lead frame parts. In the connection region, the respective lead frame part has the full thickness. From the connection region to the semiconductor chip the electrical line does not overcome any significant difference in height.

公开(公告)号：US11497098B2

公开(公告)日：2022-11-08

申请号：US16769223

申请日：2019-01-11

Applicant: OSRAM OLED GMBH

Inventor： Benjamin Hoeflinger ,  Matthias Goldbach

IPC: H05B45/58 ,  H05B45/14 ,  H05B47/16 ,  H05B47/14 ,  H05B45/325 ,  H05B47/28 ,  H05B45/10 ,  H05B45/28 ,  H05B45/18

Abstract: The invention relates to a method for controlling a current to a light-emitting diode in order for it to emit a desired light flux, wherein the current is determined depending on a time period during which the light-emitting diode is supplied with current, in order to generate the desired light flux for said light-emitting diode.

公开(公告)号：US10672749B2

公开(公告)日：2020-06-02

申请号：US15574926

申请日：2016-05-17

Applicant: OSRAM OLED GmbH

Inventor： Matthias Goldbach ,  Juergen Holz ,  Stefan Illek ,  Stefan Groetsch

IPC: H01L25/16 ,  H01L25/075 ,  H01L23/00 ,  H01L33/62

Abstract: A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.

公开(公告)号：US11715820B2

公开(公告)日：2023-08-01

申请号：US16966331

申请日：2019-03-12

Applicant: OSRAM OLED GmbH

Inventor： Klaus Reingruber ,  Michael Zitzlsperger ,  Matthias Goldbach

IPC: H01L33/60 ,  H01L33/54 ,  H01L33/44 ,  H01L33/46 ,  H01L33/48 ,  H01S5/02216 ,  H01S5/0234 ,  H01S5/30 ,  H01L33/50

CPC classification number: H01L33/60 ,  H01L33/54 ,  H01S5/0234 ,  H01S5/02216 ,  H01L33/50 ,  H01L2933/005 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01S5/3013

Abstract: In at least one embodiment, the optoelectronic component comprises an optoelectronic semiconductor chip with an emission side and a rear side opposite the emission side. Furthermore, the component comprises a housing body with a top side and an underside opposite the top side, and a metal layer on the top side of the housing body. During proper operation, the semiconductor chip emits primary electromagnetic radiation via the emission side. The semiconductor chip is embedded in the housing body and laterally surrounded by the housing body. The emission side is on the rear side and the top side is downstream of the underside along a main emission direction of the semiconductor chip. The metal layer is at least partially reflecting or absorbing radiation generated by the optoelectronic component.