公开(公告)号：US20170033271A1

公开(公告)日：2017-02-02

申请号：US15039303

申请日：2014-11-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas GRUENDL ,  Tobias GEBUHR ,  Markus PINDL

IPC: H01L33/62 ,  H01L23/00 ,  H01L33/54 ,  H01L33/48

CPC classification number: H01L33/62 ,  G10L2015/223 ,  H01L24/48 ,  H01L33/486 ,  H01L33/54 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

Abstract: A method of producing an optoelectronic component includes providing a lead frame subdivided by a separating region into first and second lead frame parts, carrying out etching in which at least one trench structure is produced on the upper side of the first lead frame, producing a molded body by molding a molding material around the lead frame such that 1) a cavity is formed and exposes a region of the upper side of the first lead frame part and a region of the upper side of the second lead frame part, and 2) the trench structure is provided on the upper side of the exposed region of the first lead frame part, and arranging the optoelectronic semiconductor chip on the upper side of the exposed region of the first lead frame part such that the trench structure is used as an alignment mark.

Abstract translation: 一种制造光电子部件的方法包括：将由分离区域划分的引线框架提供到第一引线框架部件和第二引线框架部件中，执行其中在第一引线框架的上侧上产生至少一个沟槽结构的蚀刻， 通过在引线框架周围模制成型材料，使得1）形成空腔并暴露第一引线框架部分的上侧的区域和第二引线框架部分的上侧的区域，以及2） 沟槽结构设置在第一引线框架部分的暴露区域的上侧，并且将光电半导体芯片布置在第一引线框架部分的暴露区域的上侧，使得沟槽结构用作对准标记 。