公开(公告)号：US20170288091A1

公开(公告)日：2017-10-05

申请号：US15514489

申请日：2015-09-24

Applicant: OSRAM Opto Semiconductors GmbH ,  OSRAM GmbH

Inventor： Bernd BOEHM ,  Daniel ZASPEL ,  Stefan HARTAUER ,  Bjoern HOXHOLD

IPC: H01L33/00

CPC classification number: H01L33/0095 ,  H01L33/486 ,  H01L33/642 ,  H01L2933/005

Abstract: The invention provides an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component (10), comprising the following steps: •A) arranging at least one semiconductor chip (2) on a carrier (1), •B) applying an electrically insulating photoresist (3) to a top side (1a) of the carrier (1) and to the semiconductor chip (2), •C) curing the photoresist (3) with a baking step, •D) patterning the photoresist (3) by exposure, •F) developing the photoresist (3), wherein the photoresist (3) is removed at least from a radiation penetration surface (2b) of the semiconductor chip (2), •G) again curing the photoresist (3) with a baking step, and •H) applying an electrically conductive contact layer (4) to the photoresist (3), wherein the electrically conductive contact layer (4) is in places at a distance (A) from a marginal surface (3a) of the photoresist (3) which faces towards the semiconductor chip (2), wherein the marginal surface (3a) facing towards the semiconductor chip (2) is exposed in places.

公开(公告)号：US20170133555A1

公开(公告)日：2017-05-11

申请号：US15413281

申请日：2017-01-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lorenzo ZINI ,  Bernd BOEHM

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/32 ,  H01L25/075

CPC classification number: H01L33/24 ,  H01L25/167 ,  H01L33/0095 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a method for separating regions of a semiconductor layer and for introducing an outcoupling structure into an upper side of the semiconductor layer, the outcoupling structure being provided to couple light out of the semiconductor layer. The upper side of the semiconductor layer is covered by a mask having first openings for introducing the outcoupling structure and at least a second opening, which is provided to introduce a separating trench into the semiconductor layer. With the aid of an etching method, the outcoupling structure is introduced into the upper side of the semiconductor layer in the region of the first openings and simultaneously a separating trench passing through the semiconductor layer is introduced into the semiconductor layer via the second opening, and a region of the semiconductor layer is separated.