公开(公告)号：US20150245436A1

公开(公告)日：2015-08-27

申请号：US14431737

申请日：2013-09-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Ales Markytan ,  Christian Gärtner

IPC: H05B33/08

CPC classification number: H05B33/0824 ,  H05B33/0857 ,  H05B33/086 ,  H05B33/0866

Abstract: The present invention relates to an arrangement for emitting mixed light comprising at least three diodes, comprising a first drive circuit supplying the first diode with current via a first channel, wherein the first diode is of type A, wherein type A represents a diode configured to emit green and/or green-white light, wherein the drive circuit supplies the series-connected second and third diodes with current via a second channel, wherein the second diode is of type B, wherein type B represents a diode configured to emit red light, wherein the third diode is of type C, wherein type C represents a diode configured to emit blue and/or blue-white light, wherein the drive circuit is configured to change, depending on an operating parameter of at least one diode, the current supply for the first and/or second channel so as to counteract a colour locus shift of a diode.

Abstract translation: 本发明涉及一种用于发射包括至少三个二极管的混合光的装置，包括经由第一通道向第一二极管提供电流的第一驱动电路，其中第一二极管为A型，其中A型表示二极管， 发射绿色和/或绿白色光，其中驱动电路经由第二通道向串联的第二和第二二极管提供电流，其中第二二极管为B型，其中B型表示被配置为发射红光的二极管 ，其中所述第三二极管是类型C，其中类型C表示被配置为发射蓝色和/或蓝白色光的二极管，其中所述驱动电路被配置为根据至少一个二极管的工作参数改变所述电流 供给第一和/或第二通道，以抵消二极管的颜色轨迹移动。

公开(公告)号：US20150200339A1

公开(公告)日：2015-07-16

申请号：US14420310

申请日：2013-07-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ales Markytan ,  Christian Gärtner ,  Hans-Christoph Gallmeier ,  Ion Stoll ,  Herbert Brunner ,  Thomas Schlereth

IPC: H01L33/50

CPC classification number: H01L33/501 ,  H01L33/504 ,  H01L33/505 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Abstract translation: 在至少一个实施例中，半导体部件包括光电子半导体芯片。 此外，半导体部件包括转换介质层，其被安装到半导体芯片的主辐射侧，并被设计用于将初级辐射转换成次级辐射。 转化介质层包括嵌入其中的基质材料和转化介质颗粒。 此外，转换介质层包括转化层。 转化介质颗粒位于至少一个转化层中。 任选存在的单独或与扩散介质颗粒一起的转化介质颗粒占转化层的至少50％的体积比例。 此外，转化介质层包括含有体积比至多2.5％的转化介质颗粒的粘合剂层。

公开(公告)号：US20150137155A1

公开(公告)日：2015-05-21

申请号：US14408240

申请日：2013-06-06

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Ales Markytan ,  Christian Gärtner

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/56

CPC classification number: H01L25/0753 ,  H01L33/504 ,  H01L33/507 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light source comprising first and second light-emitting diode chips; and a conversion element containing a first phosphor and a second phosphor, wherein the conversion element is disposed downstream of the first and second light-emitting diode chips. The first light-emitting diode chip emits electromagnetic radiation with a first emission maximum. The second light-emitting diode chip emits electromagnetic radiation with a second emission maximum. The first phosphor has a first absorption maximum and a first radiating maximum. The second phosphor has a second absorption maximum, which differs from the first absorption maximum, and a second radiating maximum, which differs from the first radiating maximum. The degree of conversion of the first phosphor for the electromagnetic radiation of the first light-emitting diode chip is greater than the degree of conversion of the second phosphor for the electromagnetic radiation of the first light-emitting diode chip.

Abstract translation: 一种半导体光源，包括第一和第二发光二极管芯片; 以及包含第一荧光体和第二荧光体的转换元件，其中所述转换元件设置在所述第一和第二发光二极管芯片的下游。 第一发光二极管芯片发射具有第一发射最大值的电磁辐射。 第二发光二极管芯片发射具有第二发射最大值的电磁辐射。 第一荧光体具有第一吸收最大值和第一辐射最大值。 第二荧光体具有与第一吸收最大值不同的第二吸收最大值和与第一辐射最大值不同的第二辐射最大值。 用于第一发光二极管芯片的电磁辐射的第一荧光体的转换度大于第一发光二极管芯片的电磁辐射的第二荧光体的转换度。

公开(公告)号：US09799633B2

公开(公告)日：2017-10-24

申请号：US14408240

申请日：2013-06-06

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Ales Markytan ,  Christian Gärtner

IPC: H01L25/075 ,  H01L33/56 ,  H01L33/50

CPC classification number: H01L25/0753 ,  H01L33/504 ,  H01L33/507 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light source comprising first and second light-emitting diode chips; and a conversion element containing a first phosphor and a second phosphor, wherein the conversion element is disposed downstream of the first and second light-emitting diode chips. The first light-emitting diode chip emits electromagnetic radiation with a first emission maximum. The second light-emitting diode chip emits electromagnetic radiation with a second emission maximum. The first phosphor has a first absorption maximum and a first radiating maximum. The second phosphor has a second absorption maximum, which differs from the first absorption maximum, and a second radiating maximum, which differs from the first radiating maximum. The degree of conversion of the first phosphor for the electromagnetic radiation of the first light-emitting diode chip is greater than the degree of conversion of the second phosphor for the electromagnetic radiation of the first light-emitting diode chip.

公开(公告)号：US09406847B2

公开(公告)日：2016-08-02

申请号：US14420310

申请日：2013-07-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ales Markytan ,  Christian Gärtner ,  Hans-Christoph Gallmeier ,  Ion Stoll ,  Herbert Brunner ,  Thomas Schlereth

IPC: H01L33/50

CPC classification number: H01L33/501 ,  H01L33/504 ,  H01L33/505 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Abstract translation: 在至少一个实施例中，半导体部件包括光电子半导体芯片。 此外，半导体部件包括转换介质层，其被安装到半导体芯片的主辐射侧，并被设计用于将初级辐射转换成次级辐射。 转化介质层包括嵌入其中的基质材料和转化介质颗粒。 此外，转换介质层包括转化层。 转化介质颗粒位于至少一个转化层中。 任选存在的单独或与扩散介质颗粒一起的转化介质颗粒占转化层的至少50％的体积比例。 此外，转化介质层包括含有体积比至多2.5％的转化介质颗粒的粘合剂层。

公开(公告)号：US09773776B2

公开(公告)日：2017-09-26

申请号：US15157853

申请日：2016-05-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Gärtner ,  Ales Markytan ,  Jan Marfeld

IPC: H01L27/02 ,  H05B33/08 ,  H01L27/15 ,  F21K9/60 ,  H01L25/16 ,  H01L33/30 ,  H01L33/32 ,  H01L33/50 ,  H01L33/56 ,  F21Y115/10

CPC classification number: H01L27/0248 ,  F21K9/60 ,  F21Y2115/10 ,  H01L25/167 ,  H01L27/156 ,  H01L33/30 ,  H01L33/32 ,  H01L33/502 ,  H01L33/56 ,  H05B33/0845 ,  H05B33/0857 ,  H05B33/089

Abstract: A lighting module for emitting mixed light comprises at least one first semiconductor element which emits unconverted red light, at least one second semiconductor element which emits converted greenish white light having a first conversion percentage, at least one third semiconductor element which emits greenish white light having a second conversion percentage that is smaller than the first conversion percentage, and at least one resistor element having a temperature-dependent electric resistance, the second semiconductor element being connected in parallel to the third semiconductor element.