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公开(公告)号：US20200044126A1
公开(公告)日：2020-02-06
申请号：US16496075
申请日：2018-03-21
发明人： Ivar Tangring , Thomas Schlereth
摘要： A method for producing a plurality of radiation-emitting semiconductor components and a radiation-emitting semiconductor component are disclosed. In an embodiment a method includes providing an auxiliary carrier, applying a first structured wavelength converting layer to the auxiliary carrier comprising a plurality of structural elements, filling regions between the structural elements with a first reflective casting compound and applying a radiation-emitting semiconductor chip with its front side to one structural element of the first structured wavelength converting layer in each case.
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2.发明授权公开(公告)号：US09755114B2
公开(公告)日：2017-09-05
申请号：US14763157
申请日：2013-12-12
IPC分类号： H01L33/56 , H01L33/62 , H01L33/50 , H01L33/00 , H01L23/00 , H01L33/48 , H01L33/54 , H01L25/075
CPC分类号： H01L33/502 , H01L24/97 , H01L25/0753 , H01L33/0095 , H01L33/486 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/62 , H01L2224/16245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49113 , H01L2924/12041 , H01L2924/181 , H01L2924/18301 , H01L2933/005 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The invention relates to a method for producing a plurality of optoelectronic components, comprising the following steps: —providing an auxiliary support wafer (1) having contact structures (4), wherein the auxiliary support wafer comprises glass, sapphire, or a semiconductor material, —applying a plurality of radiation-emitting semiconductor bodies (5) to the contact structures (4), —encapsulating an least the contact structures (4) with a potting mass (10), and —removing the auxiliary support wafer (1). The invention further relates to an optoelectronic component.
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3.发明授权公开(公告)号：US09385258B2
公开(公告)日：2016-07-05
申请号：US14376165
申请日：2013-02-08
IPC分类号： H01L31/12 , H01L31/16 , H01L33/46 , H01L33/52 , H01L31/0224 , H01L31/0232 , H01L33/60
CPC分类号： H01L31/16 , H01L31/022408 , H01L31/02325 , H01L31/02327 , H01L33/46 , H01L33/52 , H01L33/56 , H01L33/58 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.
摘要翻译： 光电子半导体器件包括至少一个辐射发射和/或辐射接收半导体芯片，其包括辐射通道表面和与辐射通道表面相对的安装表面，其中安装表面包括第一电接触结构和第二电接触结构 与第一电接触结构电绝缘，并且其中辐射通道表面不具有接触结构，至少部分包围至少一个半导体芯片的反射护套和围绕至少一个半导体芯片的保护护套和/或 反射护套至少在部分。
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公开(公告)号：US20150247616A1
公开(公告)日：2015-09-03
申请号：US14430898
申请日：2013-09-17
发明人： Tony Albrecht , Thomas Schlereth , Roland Schulz , Christian Gaertner , Albert Schneider , Markus Kirsch , Michael Bestele , Stefan Handl
CPC分类号： F21V7/04 , F21K9/60 , F21V7/0008 , F21V9/30 , F21V13/04 , F21V13/10 , F21Y2101/00 , F21Y2103/33 , F21Y2115/10
摘要： In at least one embodiment, the ring light module (1) comprises a plurality of optoelectronic semiconductor components (2) for producing electromagnetic radiation (R). A reflector (3) of the ring light module (1) comprises a reflective surface (30). The semiconductor components (2) are mounted on a support (4). Viewed in plan view of a main radiation side (45) of the ring light module (1), the reflector (3) comprises at most two planes of symmetry. The reflector (3) tapers in the direction towards the main radiation side (45). At least some of the main emission directions (20) of adjacent semiconductor components (2) are oriented differently from each other. The main emission directions (20) point towards the reflective surface (30).
摘要翻译： 在至少一个实施例中，环形光模块（1）包括用于产生电磁辐射（R）的多个光电子半导体部件（2）。 环形光模块（1）的反射器（3）包括反射表面（30）。 半导体部件（2）安装在支撑件（4）上。 在环形光模块（1）的主辐射侧（45）的平面图中观察，反射器（3）包括至多两个对称平面。 反射器（3）朝向主辐射侧（45）的方向逐渐变细。 相邻半导体部件（2）的主要发射方向（20）的至少一部分彼此不同。 主发射方向（20）指向反射表面（30）。
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5.发明申请公开(公告)号：US20150200138A1
公开(公告)日：2015-07-16
申请号：US14405393
申请日：2013-05-03
发明人： Thomas Schlereth , Michael Bestele , Christian Gaertner , Tobias Gebuhr , Hans-Christoph Gallmeier , Peter Holzer , Karlheinz Arndt , Albert Schneider
IPC分类号： H01L21/78 , H01L23/495 , H01L21/66 , H01L21/50
CPC分类号： H01L21/78 , G01R31/2635 , H01L21/50 , H01L22/10 , H01L23/49541 , H01L23/49565 , H01L33/0095 , H01L33/486 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2933/0033 , H01L2933/0066 , H01L2924/00014
摘要： In one embodiment, the method is configured for producing optoelectronic semiconductor components (1) and includes the steps of: providing a leadframe assembly (20) with a multiplicity of leadframes (2), each having at least two leadframe parts (21, 22); forming at least a part of the leadframe assembly (20) with a housing material for housing bodies (4); dividing the leadframe assembly (20) between at least one part of the columns (C) and/or the rows (R), wherein the leadframes (2) remain arranged in a matrix-like manner; equipping the leadframes (2) with at least one optoelectronic semiconductor chip (3); testing at least one part of the leadframes (2) equipped with the semiconductor chips (3) and formed with the housing material after the step of dividing; and separating to form the semiconductor components (1) after the step of forming and after the step of testing.
摘要翻译： 在一个实施例中，该方法被配置用于制造光电子半导体部件（1），并且包括以下步骤：提供具有多个引线框架（2）的引线框组件（20），每个引线框架（2）具有至少两个引线框部件（21,22） ; 用用于壳体（4）的壳体材料形成所述引线框架组件（20）的至少一部分; 在所述列（C）的至少一部分和/或所述行（R）之间划分所述引线框架组件（20），其中所述引线框架（2）保持以矩阵状方式布置; 将引线框架（2）装配至少一个光电半导体芯片（3）; 测试配备有半导体芯片（3）的引线框（2）的至少一部分，并在分割步骤之后形成外壳材料; 并且在成型步骤和测试步骤之后分离形成半导体部件（1）。
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公开(公告)号：US20150028361A1
公开(公告)日：2015-01-29
申请号：US14376165
申请日：2013-02-08
IPC分类号： H01L31/16 , H01L31/0232 , H01L33/60
CPC分类号： H01L31/16 , H01L31/022408 , H01L31/02325 , H01L31/02327 , H01L33/46 , H01L33/52 , H01L33/56 , H01L33/58 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.
摘要翻译： 光电子半导体器件包括至少一个辐射发射和/或辐射接收半导体芯片，其包括辐射通道表面和与辐射通道表面相对的安装表面，其中安装表面包括第一电接触结构和第二电接触结构 与第一电接触结构电绝缘，并且其中辐射通道表面不具有接触结构，至少部分包围至少一个半导体芯片的反射护套和围绕至少一个半导体芯片的保护护套和/或 反射护套至少在部分。
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公开(公告)号：US11616178B2
公开(公告)日：2023-03-28
申请号：US16500946
申请日：2018-03-21
发明人： Ivar Tangring , Thomas Schlereth
摘要： A method for producing a plurality of radiation emitting semiconductor devices and a radiation emitting semiconductor device are disclosed. In an embodiment a method include providing an auxiliary carrier, applying a plurality of radiation-emitting semiconductor chips to the auxiliary carrier with front sides so that rear sides of the semiconductor chips are freely accessible, wherein each rear side of the respective semiconductor chip has at least one electrical contact, applying spacers to the auxiliary carrier so that the spacers directly adjoin side surfaces of the semiconductor chips and applying a casting compound between the semiconductor chips by a screen printing process such that a semiconductor chip assembly is formed, wherein a screen for the screen printing process has a plurality of cover elements, and wherein each cover element covers at least one electrical contact.
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公开(公告)号：US11195978B2
公开(公告)日：2021-12-07
申请号：US16496075
申请日：2018-03-21
发明人： Ivar Tangring , Thomas Schlereth
摘要： A method for producing a plurality of radiation-emitting semiconductor components and a radiation-emitting semiconductor component are disclosed. In an embodiment a method includes providing an auxiliary carrier, applying a first structured wavelength converting layer to the auxiliary carrier comprising a plurality of structural elements, filling regions between the structural elements with a first reflective casting compound and applying a radiation-emitting semiconductor chip with its front side to one structural element of the first structured wavelength converting layer in each case.
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9.发明申请公开(公告)号：US20190113181A1
公开(公告)日：2019-04-18
申请号：US16087949
申请日：2017-03-23
CPC分类号： F21K9/232 , F21K9/275 , F21Y2103/10 , F21Y2115/10 , H01L25/0753 , H01L33/50 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2933/0041 , H01L2933/005 , H01L2933/0091
摘要： A filament includes a multiplicity of light-emitting semiconductor chips, wherein the semiconductor chips are arranged on a carrier, the semiconductor chips being electrically contacted, a scattering structure is configured to scatter light of the light-emitting semiconductor chips, the scattering structure is formed by structuring a surface, a converter covers the light-emitting semiconductor chips, and the structuring of the surface is formed on a surface of the converter.
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10.发明授权Optoelectronic semiconductor chip, and light source comprising the optoelectronic semiconductor chip 有权光电子半导体芯片，以及包含光电半导体芯片的光源公开(公告)号：US09379286B2
公开(公告)日：2016-06-28
申请号：US14428952
申请日：2013-09-06
CPC分类号： H01L33/38 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified.
摘要翻译： 光电半导体芯片（10）被规定为包括具有至少两个彼此排列的有源区（21,22）的半导体层序列（20），其中有源区域（21,22）各自具有第一半导体区域 3），第二导电类型的第二半导体区域（5）和布置在第一半导体区域（3）和第二半导体区域（5）之间的辐射发射有源层（4）。 光电子半导体芯片（10）包括配置在半导体层序列（20）背离辐射出射表面（13）的一侧的镜层（6）和至少两个电触点（11,12） ），其布置在所述镜层（6）的背离辐射出射表面（13）的一侧。 此外，指定包括光电半导体芯片（10）的光源（30）。
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