Method for producing an optoelectronic device

    公开(公告)号:US11923487B2

    公开(公告)日:2024-03-05

    申请号:US17296378

    申请日:2019-12-03

    Abstract: In an embodiment a method includes providing a carrier with an optoelectronic semiconductor chip-component arranged on a top side of the carrier, arranging a first potting material on the top side of the carrier, arranging a second potting material on the first potting material, wherein the second potting material comprises a higher density than the first potting material, wherein a top side of the optoelectronic semiconductor chip-component is covered by neither the first potting material nor the second potting material and allowing a force to act on the first potting material and the second potting material such that the second potting material migrates in a direction toward the top side of the carrier.

    Method for Producing an Optoelectronic Device

    公开(公告)号:US20220020902A1

    公开(公告)日:2022-01-20

    申请号:US17296378

    申请日:2019-12-03

    Abstract: In an embodiment a method includes providing a carrier with an optoelectronic semiconductor chip-component arranged on a top side of the carrier, arranging a first potting material on the top side of the carrier, arranging a second potting material on the first potting material, wherein the second potting material comprises a higher density than the first potting material, wherein a top side of the optoelectronic semiconductor chip-component is covered by neither the first potting material nor the second potting material and allowing a force to act on the first potting material and the second potting material such that the second potting material migrates in a direction toward the top side of the carrier.

    Production of a Semiconductor Device
    3.
    发明申请

    公开(公告)号:US20200251624A1

    公开(公告)日:2020-08-06

    申请号:US16640033

    申请日:2018-08-16

    Abstract: In an embodiment a method for producing a semiconductor device includes providing a carrier with a semiconductor component arranged on the carrier, providing a layer arrangement on the carrier, the layer arrangement adjoining the semiconductor component and comprising a first and a second flowable layer, wherein the first layer is formed on the carrier and then the second layer is formed on the first layer, wherein the first layer comprises particles, wherein a density of the first layer is greater than a density of the second layer, and wherein a lateral wetting of the semiconductor component with the first layer occurs such that the first layer comprises a first configuration comprising a curved layer surface laterally with respect to the semiconductor component, and centrifuging the carrier such that the first layer comprises a second configuration as a result, wherein the first layer cannot return to the first configuration since the second layer is arranged on the first layer.

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