Laser
    1.
    发明申请
    Laser 有权
    激光

    公开(公告)号:US20140169397A1

    公开(公告)日:2014-06-19

    申请号:US14104689

    申请日:2013-12-12

    IPC分类号: H01S5/183

    摘要: A vertical cavity surface emitting laser (VCSEL) configured to operate in a gain switching regime includes a cavity that is terminated by reflectors at both ends for enabling a standing wave of optical radiation therebetween. The cavity comprises at least one quantum well, each of the quantum wells located at a position where a value of a standing wave factor for each quantum well is between zero and one, 0

    摘要翻译: 配置成以增益切换方式工作的垂直腔表面发射激光器(VCSEL)包括由两端的反射器端接的腔体,用于使其间的光辐射驻波。 空腔包括至少一个量子阱,每个量子阱位于每个量子阱的驻波因子的值在0和1之间的位置,0

    Method of manufacturing optical semiconductor apparatus and the apparatus

    公开(公告)号:US11777278B2

    公开(公告)日:2023-10-03

    申请号:US16627422

    申请日:2018-06-28

    申请人: OULUN YLIOPISTO

    IPC分类号: H01S5/20 H01S5/32 H01S5/323

    摘要: An apparatus is configured to operate in a single fundamental transverse mode and the apparatus includes a waveguide layer between an n-doped cladding layer and a p-doped cladding layer. The waveguide layer includes a first waveguide part, and an active layer located between the first waveguide part and the p-doped cladding layer, the active layer being asymmetrically within the waveguide layer closer to the p-doped cladding layer than the n-doped cladding layer. The refractive index of the n-doped cladding layer being equal to or larger than the p-doped cladding layer. A first end of the first waveguide part is adjacent to the n-doped cladding layer. A second end of the first waveguide part is adjacent to a first end of the active layer. A desired donor density is doped in the first waveguide part for controlling the carrier density dependent internal optical loss in the first waveguide part at high injection levels.

    Laser
    3.
    发明授权
    Laser 有权
    激光

    公开(公告)号:US08934514B2

    公开(公告)日:2015-01-13

    申请号:US14104689

    申请日:2013-12-12

    IPC分类号: H01S5/00 H01S5/183

    摘要: A vertical cavity surface emitting laser (VCSEL) configured to operate in a gain switching regime includes a cavity that is terminated by reflectors at both ends for enabling a standing wave of optical radiation therebetween. The cavity comprises at least one quantum well, each of the quantum wells located at a position where a value of a standing wave factor for each quantum well is between zero and one, 0

    摘要翻译: 配置成以增益切换方式工作的垂直腔表面发射激光器(VCSEL)包括由两端的反射器端接的腔体,以实现其间的光辐射驻波。 空腔包括至少一个量子阱,每个量子阱位于每个量子阱的驻波因子的值在0和1之间的位置,0