MANUFACTURING METHOD OF ELECTRONIC DEVICE
    5.
    发明公开

    公开(公告)号:US20240145620A1

    公开(公告)日:2024-05-02

    申请号:US18446214

    申请日:2023-08-08

    IPC分类号: H01L31/18 H10N30/03

    CPC分类号: H01L31/1896 H10N30/03

    摘要: A manufacturing method of an electronic device includes forming a support layer that is provided to extend from a first surface of a functional layer formed on a first substrate via a first layer, as a surface on a side opposite to the first substrate, to the first substrate and supports the functional layer with respect to the first substrate, forming a thin film holding layer on at least one of the support layer and the first surface of the functional layer, removing the first layer, joining a transfer member to a surface of the thin film holding layer on a side opposite to the functional layer, separating the functional layer, the support layer and the thin film holding layer from the first substrate, transferring the functional layer, the support layer and the thin film holding layer to a different second substrate, and removing the thin film holding layer.