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    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    5.
    发明申请
    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    微波投影曝光装置

    公开(公告)号：US20100231883A1

    公开(公告)日：2010-09-16

    申请号：US12727482

    申请日：2010-03-19

    申请人： Aurelian Dodoc ,  Sascha Bleidistel ,  Olaf Conradi ,  Arif Kazi

    发明人： Aurelian Dodoc ,  Sascha Bleidistel ,  Olaf Conradi ,  Arif Kazi

    IPC分类号： G03B27/54

    CPC分类号： G03F7/70891 ,  G03F7/70308

    摘要： A microlithographic projection exposure apparatus includes a primary illumination system producing projection light, a projection objective and a correction optical system. The correction optical system includes a secondary illumination system, which produces an intensity distribution of correction light in a reference surface, and a correction element which includes a heating material and is arranged in a plane that is at least substantially optically conjugate to the reference surface such that the correction light and the projection light pass through at least one lens contained in the projection objective before they impinge on the correction element. All lenses through which both the correction light and the projection light pass are made of a lens material which has a lower coefficient of absorption for the correction light than the heating material contained in the correction element.

    摘要翻译： 微光刻投影曝光装置包括产生投影光的一次照明系统，投射物镜和校正光学系统。 校正光学系统包括二次照明系统，其产生参考表面中的校正光的强度分布;以及校正元件，其包括加热材料，并且被布置在与参考表面至少基本上光学共轭的平面中， 校正光和投射光在撞击在校正元件上之前通过包含在投影物镜中的至少一个透镜。 校正光和投影光通过的所有透镜由透镜材料制成，该透镜材料与校正元件中包含的加热材料相比具有较低的校正光吸收系数。

    Semiconductor microlithography projection exposure apparatus
    6.
    发明授权
    Semiconductor microlithography projection exposure apparatus 有权
    半导体微光刻投影曝光装置

    公开(公告)号：US09366977B2

    公开(公告)日：2016-06-14

    申请号：US13289560

    申请日：2011-11-04

    申请人： Sascha Bleidistel ,  Olaf Conradi ,  Arif Kazi

    发明人： Sascha Bleidistel ,  Olaf Conradi ,  Arif Kazi

    IPC分类号： G03B27/42 ,  G03F7/20 ,  G02B7/00 ,  G02B27/00

    CPC分类号： G03F7/70891 ,  G02B7/008 ,  G02B27/0068 ,  G03F7/70308

    摘要： The disclosure relates to an optical correction arrangement including at least one optical element and at least one irradiation mechanism for the targeted local irradiation of the optical element with electromagnetic heating radiation for the targeted local heating of the optical element. The optical correction arrangement also includes a mechanism for dissipating the thermal energy introduced into the optical element by the at least one irradiation mechanism. The disclosure furthermore relates to a projection exposure apparatus for semiconductor lithography including an optical correction arrangement according to the disclosure.

    摘要翻译： 本公开涉及一种光学校正装置，其包括至少一个光学元件和至少一个照射机构，用于利用用于光学元件的目标局部加热的电磁加热辐射来对光学元件进行目标局部照射。 光学校正装置还包括用于通过至少一个照射机构耗散引入光学元件的热能的机构。 本发明还涉及一种包括根据本公开的光学校正装置的用于半导体光刻的投影曝光装置。

    Microlithographic projection exposure apparatus with correction optical system that heats projection objective element
    7.
    发明授权
    Microlithographic projection exposure apparatus with correction optical system that heats projection objective element 有权
    具有校正光学系统的微光刻投影曝光装置，其加热投影物镜元件

    公开(公告)号：US08773638B2

    公开(公告)日：2014-07-08

    申请号：US12727482

    申请日：2010-03-19

    申请人： Aurelian Dodoc ,  Sascha Bleidistel ,  Olaf Conradi ,  Arif Kazi

    发明人： Aurelian Dodoc ,  Sascha Bleidistel ,  Olaf Conradi ,  Arif Kazi

    IPC分类号： G03B27/54

    CPC分类号： G03F7/70891 ,  G03F7/70308

    摘要： A microlithographic projection exposure apparatus includes a primary illumination system producing projection light, a projection objective and a correction optical system. The correction optical system includes a secondary illumination system, which produces an intensity distribution of correction light in a reference surface, and a correction element which includes a heating material and is arranged in a plane that is at least substantially optically conjugate to the reference surface such that the correction light and the projection light pass through at least one lens contained in the projection objective before they impinge on the correction element. All lenses through which both the correction light and the projection light pass are made of a lens material which has a lower coefficient of absorption for the correction light than the heating material contained in the correction element.

    摘要翻译： 微光刻投影曝光装置包括产生投影光的一次照明系统，投射物镜和校正光学系统。 校正光学系统包括二次照明系统，其产生参考表面中的校正光的强度分布;以及校正元件，其包括加热材料，并且被布置在与参考表面至少基本上光学共轭的平面中， 校正光和投射光在撞击在校正元件上之前通过包含在投影物镜中的至少一个透镜。 校正光和投影光通过的所有透镜由透镜材料制成，该透镜材料与校正元件中包含的加热材料相比具有较低的校正光吸收系数。

    SEMICONDUCTOR MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS
    8.
    发明申请
    SEMICONDUCTOR MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS 有权

    公开(公告)号：US20120069310A1

    公开(公告)日：2012-03-22

    申请号：US13289560

    申请日：2011-11-04

    申请人： Sascha Bleidistel ,  Olaf Conradi ,  Arif Kazi

    发明人： Sascha Bleidistel ,  Olaf Conradi ,  Arif Kazi

    IPC分类号： G03B27/52

    CPC分类号： G03F7/70891 ,  G02B7/008 ,  G02B27/0068 ,  G03F7/70308

    摘要： The disclosure relates to an optical correction arrangement including at least one optical element and at least one irradiation mechanism for the targeted local irradiation of the optical element with electromagnetic heating radiation for the targeted local heating of the optical element. The optical correction arrangement also includes a mechanism for dissipating the thermal energy introduced into the optical element by the at least one irradiation mechanism. The disclosure furthermore relates to a projection exposure apparatus for semiconductor lithography including an optical correction arrangement according to the disclosure.

    摘要翻译： 本公开涉及一种光学校正装置，其包括至少一个光学元件和至少一个照射机构，用于利用用于光学元件的目标局部加热的电磁加热辐射来对光学元件进行目标局部照射。 光学校正装置还包括用于通过至少一个照射机构耗散引入光学元件的热能的机构。 本发明还涉及一种包括根据本公开的光学校正装置的用于半导体光刻的投影曝光装置。

    Method for Improving the Imaging Properties of a Projection Objective, and Such a Projection Objective
    10.
    发明申请
    Method for Improving the Imaging Properties of a Projection Objective, and Such a Projection Objective 有权
    改进投影目标成像特性的方法，以及这样的投影目标

    公开(公告)号：US20080310029A1

    公开(公告)日：2008-12-18

    申请号：US11915191

    申请日：2006-05-24

    申请人： Olaf Conradi ,  Heiko Feldmann ,  Gerald Richter ,  Sascha Bleidistel ,  Andreas Frommeyer ,  Toralf Gruner ,  Wolfgang Hummel

    发明人： Olaf Conradi ,  Heiko Feldmann ,  Gerald Richter ,  Sascha Bleidistel ,  Andreas Frommeyer ,  Toralf Gruner ,  Wolfgang Hummel

    IPC分类号： G02B17/08 ,  G02B27/18

    CPC分类号： G02B27/0068 ,  G02B3/0081 ,  G02B26/0825 ,  G03F7/7015 ,  G03F7/70266 ,  G03F7/70558 ,  Y10S359/90

    摘要： The invention relates to a method -for improving the imaging properties of a micro lithography projection objective (50), wherein the projection objective has a plurality of lenses (L1, L2, L3, L4, L5, L6, L7, L8) between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator (ml, Mn) for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.

    摘要翻译： 本发明涉及一种用于改善微光刻投影物镜（50）的成像特性的方法，其中投影物镜在物体之间具有多个透镜（L1，L2，L3，L4，L5，L6，L7，L8） 平面和图像平面，多个透镜的第一透镜被分配用于主动变形透镜的第一操纵器（ml，Mn），第一透镜被变形以至少部分地校正像差，至少一个第二透镜 多个透镜还被分配至少一个第二操纵器，并且第二透镜除了第一透镜之外也变形。 此外，描述了用于选择投影物镜的多个透镜中的至少一个透镜作为主动变形元件和投影物镜的方法。