公开(公告)号：US10373830B2

公开(公告)日：2019-08-06

申请号：US15452005

申请日：2017-03-07

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Minghsuan Liu ,  Kameshwar Yadavalli ,  Weilong Tang ,  Benjamin A. Haskell ,  Hailong Zhou

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/66 ,  H01L21/26 ,  H01L21/18 ,  H01L21/762

Abstract: An electromagnetic wave irradiation apparatus and methods to bond unbonded areas in a bonded pair of substrates are disclosed. The unbonded areas between the substrates are eliminated by thermal activation in the unbonded areas induced by electromagnetic wave irradiation having a wavelength selected to effect a phonon or electron excitation. A first substrate of the bonded pair of substrates absorbs the electromagnetic radiation and a portion of a resulting thermal energy transfers to an interface of the bonded pair of substrates at the unbonded areas with sufficient flux to cause opposite sides the first and second substrates to interact and dehydrate to form a bond (e.g., Si—O—Si bond).

公开(公告)号：US09443727B2

公开(公告)日：2016-09-13

申请号：US14459120

申请日：2014-08-13

Applicant: Ostendo Technologies, Inc.

Inventor： Vitali Soukhoveev ,  Vladimir Ivantsov ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury ,  Alexander Syrkin

IPC: H01L21/02 ,  H01L29/20 ,  C30B25/18 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  C30B23/02 ,  C30B29/40

CPC classification number: H01L21/02381 ,  C30B23/025 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/2003

Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.

Abstract translation: 已经开发了一种克服现有技术在半极性III族氮化物模板，膜和材料的性能和制造中的缺陷的方法。 已经开发了一种新型氢化物气相外延变体，其提供了纳米级周期性结构的受控生长。 已经利用生长方法来生长具有不同组成的交替AlGaN层的多周期堆叠。 将这种周期性结构应用于半极性III-氮化物产生了优异的材料的结构和形态特性，包括在生长材料的自由表面处的穿透位错密度和表面粗糙度降低。 这种增强能够制造优质的半极化III族氮化物电子和光电器件，包括但不限于晶体管，发光二极管和激光二极管。

公开(公告)号：US09978582B2

公开(公告)日：2018-05-22

申请号：US15379759

申请日：2016-12-15

Applicant: Ostendo Technologies, Inc.

Inventor： Gregory Batinica ,  Kameshwar Yadavalli ,  Qian Fan ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/66 ,  H01L23/31 ,  H01L23/00 ,  H01L29/20 ,  H01L29/30

CPC classification number: H01L21/02035 ,  H01L21/02002 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02172 ,  H01L21/02274 ,  H01L22/12 ,  H01L22/20 ,  H01L23/3171 ,  H01L23/562 ,  H01L24/94 ,  H01L29/2003 ,  H01L29/30 ,  H01L2224/94 ,  H01L2924/3511

Abstract: A method to improve the planarity of a semiconductor wafer and an assembly made from the method. In a preferred embodiment of the method, a compressive PECVD oxide layer such as SiO2 having a predetermined thickness or pattern is deposited on the second surface of a semiconductor wafer having an undesirable warp or bow. The thickness or pattern of the deposited oxide layer is determined by the measured warp or bow of the semiconductor wafer. The compressive oxide layer induces an offsetting compressive force on the second surface of the semiconductor wafer to reduce the warp and bow across the major surface of the semiconductor wafer.

公开(公告)号：US20170170363A1

公开(公告)日：2017-06-15

申请号：US15377775

申请日：2016-12-13

Applicant: Ostendo Technologies, Inc.

Inventor： Anna Volkova ,  Vladimir Ivantsov ,  Alexander Syrkin ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/18 ,  H01L33/08 ,  H01L27/15 ,  H01J1/308 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/109 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01J1/308 ,  C30B29/406 ,  C30B29/607 ,  C30B29/62 ,  C30B29/66 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/20 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/109 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.

公开(公告)号：US09660135B2

公开(公告)日：2017-05-23

申请号：US14452346

申请日：2014-08-05

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Benjamin A. Haskell

IPC: H01L21/00 ,  H01L33/00 ,  H01L21/02 ,  H01L27/15 ,  H01L33/08 ,  H01S5/026 ,  H01S5/30 ,  H01L33/16

CPC classification number: H01L33/0062 ,  H01L21/0242 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/156 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/16 ,  H01L2933/0025 ,  H01S5/026 ,  H01S5/3013

Abstract: Methods are described to utilize relatively low cost substrates and processing methods to achieve enhanced emissive imager pixel performance via selective epitaxial growth. An emissive imaging array is coupled with one or more patterned compound semiconductor light emitting structures grown on a second patterned and selectively grown compound semiconductor template article. The proper design and execution of the patterning and epitaxial growth steps, coupled with alignment of the epitaxial structures with the imaging array, results in enhanced performance of the emissive imager. The increased luminous flux achieved enables use of such images for high brightness display and illumination applications.

公开(公告)号：US11322652B2

公开(公告)日：2022-05-03

申请号：US15377775

申请日：2016-12-13

Applicant: Ostendo Technologies, Inc.

Inventor： Anna Volkova ,  Vladimir Ivantsov ,  Alexander Syrkin ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury

IPC: H01L31/18 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L21/20 ,  H01L33/00 ,  H01L33/08 ,  H01L33/06 ,  H01L31/0352 ,  H01L31/109 ,  H01L21/02 ,  C30B29/66 ,  C30B29/62 ,  C30B29/40 ,  C30B29/60

Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.

公开(公告)号：US20170263457A1

公开(公告)日：2017-09-14

申请号：US15452005

申请日：2017-03-07

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Minghsuan Liu ,  Kameshwar Yadavalli ,  Weilong Tang ,  Benjamin A. Haskell ,  Hailong Zhou

IPC: H01L21/18 ,  H01L21/687 ,  H01L21/762 ,  H01L21/67

CPC classification number: H01L21/187 ,  H01L21/26 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/76251 ,  H01L22/12

Abstract: An electromagnetic wave irradiation apparatus and methods to bond unbonded areas in a bonded pair of substrates are disclosed. The unbonded areas between the substrates are eliminated by thermal activation in the unbonded areas induced by electromagnetic wave irradiation having a wavelength selected to effect a phonon or electron excitation. A first substrate of the bonded pair of substrates absorbs the electromagnetic radiation and a portion of a resulting thermal energy transfers to an interface of the bonded pair of substrates at the unbonded areas with sufficient flux to cause opposite sides the first and second substrates to interact and dehydrate to form a bond (e.g., Si—O—Si bond).

公开(公告)号：US20170178891A1

公开(公告)日：2017-06-22

申请号：US15379759

申请日：2016-12-15

Applicant: Ostendo Technologies, Inc.

Inventor： Gregory Batinica ,  Kameshwar Yadavalli ,  Qian Fan ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury

IPC: H01L21/02 ,  H01L23/00 ,  H01L29/30 ,  H01L29/20 ,  H01L21/66 ,  H01L23/31

CPC classification number: H01L21/02035 ,  H01L21/02002 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02172 ,  H01L21/02274 ,  H01L22/12 ,  H01L22/20 ,  H01L23/3171 ,  H01L23/562 ,  H01L24/94 ,  H01L29/2003 ,  H01L29/30 ,  H01L2224/94 ,  H01L2924/3511

Abstract: A method to improve the planarity of a semiconductor wafer and an assembly made from the method. In a preferred embodiment of the method, a compressive PECVD oxide layer such as SiO2 having a predetermined thickness or pattern is deposited on the second surface of a semiconductor wafer having an undesirable warp or bow. The thickness or pattern of the deposited oxide layer is determined by the measured warp or bow of the semiconductor wafer. The compressive oxide layer induces an offsetting compressive force on the second surface of the semiconductor wafer to reduce the warp and bow across the major surface of the semiconductor wafer.

公开(公告)号：US20140353685A1

公开(公告)日：2014-12-04

申请号：US14459120

申请日：2014-08-13

Applicant: Ostendo Technologies, Inc.

Inventor： Vitali Soukhoveev ,  Vladimir Ivantsov ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury ,  Alexander Syrkin

IPC: H01L21/02 ,  H01L29/167 ,  H01L29/16 ,  H01L29/04 ,  H01L29/20

CPC classification number: H01L21/02381 ,  C30B23/025 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/2003

Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.

Abstract translation: 已经开发了一种克服现有技术在半极性III族氮化物模板，膜和材料的性能和制造中的缺陷的方法。 已经开发了一种新型氢化物气相外延变体，其提供了纳米级周期性结构的受控生长。 已经利用生长方法来生长具有不同组成的交替AlGaN层的多周期堆叠。 将这种周期性结构应用于半极性III-氮化物产生了优异的材料的结构和形态特性，包括在生长材料的自由表面处的穿透位错密度和表面粗糙度降低。 这种增强能够制造优质的半极化III族氮化物电子和光电器件，包括但不限于晶体管，发光二极管和激光二极管。

公开(公告)号：US20140349427A1

公开(公告)日：2014-11-27

申请号：US14452346

申请日：2014-08-05

Applicant: Ostendo Technologies, Inc.

Inventor： Hussein S. El-Ghoroury ,  Benjamin A. Haskell

IPC: H01L33/00 ,  H01S5/026 ,  H01S5/30

CPC classification number: H01L33/0062 ,  H01L21/0242 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/156 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/16 ,  H01L2933/0025 ,  H01S5/026 ,  H01S5/3013

Abstract: Methods are described to utilize relatively low cost substrates and processing methods to achieve enhanced emissive imager pixel performance via selective epitaxial growth. An emissive imaging array is coupled with one or more patterned compound semiconductor light emitting structures grown on a second patterned and selectively grown compound semiconductor template article. The proper design and execution of the patterning and epitaxial growth steps, coupled with alignment of the epitaxial structures with the imaging array, results in enhanced performance of the emissive imager. The increased luminous flux achieved enables use of such images for high brightness display and illumination applications.

Abstract translation: 描述了利用相对低成本的衬底和处理方法来实现通过选择性外延生长来实现增强的发射成像器像素性能的方法。 发射成像阵列与在第二图案化和选择性生长的化合物半导体模板制品上生长的一个或多个图案化的化合物半导体发光结构耦合。 图案化和外延生长步骤的适当设计和执行以及外延结构与成像阵列的对准，导致发射成像器的性能提高。 所获得的增加的光通量使得能够使用这种图像用于高亮度显示和照明应用。