摘要:
The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE3ME1+a(Ga1-xAlx)3+bSi2+cO14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0≤x≤1, −0.5
摘要:
To improve the Q value of a piezoelectric thin-film element in a state in which unnecessary vibration is suppressed, an acoustic reflection film (104) is affixed to a first electrode (102), a piezoelectric single-crystal substrate (101) is thinned by polishing from the other surface (101b) of the piezoelectric single-crystal substrate (101), such that the first electrode (102) and piezoelectric thin film (105) are piled on the piezoelectric single-crystal substrate (101). In this polishing, a pressure (polishing pressure) to the surface (101b) during polishing in an electrode formation region where the first electrode (102) is formed differs from that in a non-electrode formation region around the electrode formation region. Consequently, the electrode formation region of the piezoelectric thin film (105), where the first electrode (102) is formed, is made thinner than the non-electrode formation region around the electrode formation region.
摘要:
To provide a vibrator made of a piezoelectric crystal having a larger electromechanical coupling coefficient and a more satisfactory frequency-temperature characteristic than those of quartz, a vibrating piece (101) is made of a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal (0
摘要:
A crystal material that is represented by a general formula (1): (RExA1-x-y-sByM′s)2+α(Si1-t′M″t)2+βO7+γ (1), the crystal material having a pyrochlore type structure, being a nonstoichiometric composition, and being a congruent melting composition, wherein in Formula (1), A contains at least one or more selected from Gd, Y, La, Sc, Yb, and Lu; B contains at least one or more selected from La, Gd, Yb, Lu, Y, and Sc; 0.1≤y
摘要:
A crystal material represented by a general formula (1): (Gd1-x-y-zLaxMEyREz)2MM2O7 (1), where ME is at least one selected from Y, Yb, Sc, and Lu; RE is Ce or Pr; MM is at least one selected from Si and Ge; and ranges of x, y, and z are represented by the following (i): (i) 0.0≦x+y+z
摘要翻译:由通式(1)表示的结晶材料:(Gd1-x-y-zLaxMEyREz)2MM2O7(1),其中ME为选自Y,Yb,Sc和Lu中的至少一种; RE为Ce或Pr; MM是选自Si和Ge中的至少一种; 并且x,y和z的范围由以下(i)表示:(i)0.0&nlE; x + y + z <1.0,0.05&nlE; x + z <1.0,0.0&amp; nlE; y <1.0和0.0001 &nlE; z <0.05(其中,当RE为Ce时,y = 0为例外)。