Abstract:
The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.
Abstract:
A manufacturing method of a sensor chip package structure is provided. In the manufacturing method, a wafer including a plurality of sensor chips is provided, and each sensor chip has an active region and defines a pre-thinned region thereon. Each pre-thinned region is located at one side of the active region and covers a boundary line of each sensor chip. The pre-thinned region of each sensor chip is etched to form a concave portion. A redistribution layer is formed on the wafer. Subsequently, the wafer is cut to separate the sensor chips from one another, and each separated sensor chip has a wiring layer extending from the active region along a sidewall surface to a bottom surface of the concave portion. The separated sensor chips are respectively mounted on a plurality of substrates, and the active region is electrically connected to the substrate through the wiring layer.
Abstract:
The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.
Abstract:
An optical sensor package module and a manufacturing method thereof are provided. The optical sensor package module includes a substrate, a sensor chip and a shielding assembly. The sensor chip is disposed on the substrate and includes an array of pixels located at a top side thereof for receiving light. The shielding assembly surrounds the sensor chip for limiting influx of light onto the sensor chip, and the shielding assembly has a first aperture to expose at least a first subset of the pixels that is configured to receive corresponding light.
Abstract:
An optical sensor module and a sensor chip thereof are provided. The optical sensor module includes a substrate, a sensor chip and a passive chip. The sensor chip is disposed on the substrate, and the sensor chip includes a chip body having an active region located at a top side thereof and a recess portion depressed from a top surface of the chip body. The passive chip is accommodated in the recess portion, and a depth of the recess portion is greater than a thickness of the passive chip.
Abstract:
An optical component packaging structure is provided. The optical component packaging structure includes a substrate, a far-infrared sensor chip, a metal covering cap and a light filter. The far-infrared sensor chip is disposed on the substrate and electrically connected to the substrate. The metal covering cap is disposed on the substrate and accommodating the far-infrared sensor chip. The metal covering cap has an opening exposing the far-infrared sensor chip. The light filter is disposed out of the opening and on the inner surface for covering the opening to filter the far-infrared light passing through. The far-infrared sensor chip is surrounded by the metal covering cap, the substrate and the light filter, and the metal covering cap is directly connected with the substrate.
Abstract:
An optical sensor package module and a manufacturing method thereof are provided. The optical sensor package module includes a substrate, a sensor chip and a shielding assembly. The sensor chip is disposed on the substrate and includes an array of pixels located at a top side thereof for receiving light. The shielding assembly surrounds the sensor chip for limiting influx of light onto the sensor chip, and the shielding assembly has a first aperture to expose at least a first subset of the pixels that is configured to receive corresponding light.
Abstract:
The present disclosure discloses an optical module package structure and method thereof. The optical module includes a substrate, a shield, a photosensitive unit and a cover. The shield is disposed on the top of the substrate and forms a first housing space with the upper surface of the substrate. The photosensitive unit is disposed on the substrate and located in the first housing space. The shield has a light-receiving part above the photosensitive unit. At least one notch is on the outer surface of the shield. A cushion is disposed on the notch and protrudes on the upper surface of the shield. The cover is disposed on the cushion(s) and kept a constant distance to the upper surface of the shield by contacting with the cushion(s).
Abstract:
The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.
Abstract:
A sensor chip package structure and a manufacturing method thereof are provided. The sensor chip package structure includes a substrate, a sensor chip and a wiring layer. The sensor chip is mounted on the substrate and has a top surface and a concave portion concaved from the top surface. The sensor chip has an active region formed on the top surface and the concave portion is located at one side of the active region. The concave portion has a depth of 100 μm to 400 μm. The wiring layer is disposed on the sensor chip and electrically connected to the active region. At least a portion of the wiring layer extends from the active region along a sidewall of the concave portion to a bottom surface of the concave portion.