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公开(公告)号：US12037257B2
公开(公告)日：2024-07-16
申请号：US17420769
申请日：2020-12-09
Inventor： Yongyoung Noh , Youngki Kim , Jisu Hong
IPC: C01G19/00 , B82Y40/00 , C01G21/00 , C01G29/00 , C01G30/00 , C01G45/00 , C09K11/57 , C09K11/66 , C09K11/74 , C09K11/75 , C30B7/14
CPC classification number: C01G19/006 , B82Y40/00 , C01G21/006 , C01G29/006 , C01G30/002 , C01G45/006 , C09K11/57 , C09K11/664 , C09K11/665 , C09K11/7428 , C09K11/7435 , C09K11/755 , C09K11/756 , C30B7/14
Abstract: A method of producing perovskite nanocrystalline particles using a liquid crystal includes a first operation for preparing a mixed solution including a first precursor compound, a second precursor compound, and a first solvent. a second operation for preparing a precursor solution by adding an organic ligand to the prepared mixed solution, a third operation for performing crystallization treatment after adding the prepared precursor solution to a reactor containing a liquid crystal, and a fourth operation for separating the perovskite nanocrystalline particles from the crystallized solution through a centrifugal separator.
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2.发明公开公开(公告)号：US20230209994A1
公开(公告)日：2023-06-29
申请号：US18086797
申请日：2022-12-22
Inventor： Hyungjun Kim , Yongyoung Noh , Junhyung Lim , Huihui Zhu
IPC: H10K85/50 , H10K59/125 , H10K71/10
CPC classification number: H10K85/50 , H10K59/125 , H10K71/10 , H10K10/462
Abstract: A thin-film transistor including: a gate electrode; a gate insulating layer that is in contact with the gate electrode; a semiconductor layer insulated from the gate electrode by the gate insulating layer; and a source electrode and a drain electrode that are in contact with the semiconductor layer, wherein the semiconductor layer includes a perovskite compound represented by Formula 1:
[A]2[B][X]6:Z Formula 1
wherein, in Formula 1,
A includes a monovalent organic-cation, a monovalent inorganic-cation, or a combination thereof,
B includes Sn4+,
X includes a monovalent anion, and
Z includes a metal cation or a metalloid cation.-
公开(公告)号：US11964877B2
公开(公告)日：2024-04-23
申请号：US17373964
申请日：2021-07-13
Inventor： Yongyoung Noh , Youngki Kim , Jisu Hong , Hyein Kim
CPC classification number: C01D17/003 , B01F23/451 , B01F23/49 , B01F25/31 , B01F23/48 , B01F2025/93 , B82Y40/00 , C01P2002/34 , C01P2004/03 , C01P2004/64 , C01P2006/60
Abstract: Disclosed is a method for preparing a perovskite nanoparticle using a fluidic channel including a first step of forming a fluidic channel including a first outer tube, a second outer tube, and a storage tube capable of introducing flows of fluids, a second step of inducing formation of the perovskite nanoparticles by continuously preparing a mixed fluid with a laminar flow based on a flow rate by introducing a flow of a base fluid into the first outer tube, and introducing a flow of a dispersion fluid in the same direction as the flow of the base fluid into the second outer tube, and a third step of separating the perovskite nanoparticles from the mixed fluid stored in the storage tube.
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4.发明公开公开(公告)号：US20240128421A1
公开(公告)日：2024-04-18
申请号：US18364399
申请日：2023-08-02
Inventor： Hyungjun Kim , Yongyoung Noh , Junhyung Lim , Ao Liu
IPC: H01L33/62 , H01L25/16 , H01L29/18 , H01L29/417 , H01L29/66 , H01L29/786
CPC classification number: H01L33/62 , H01L25/167 , H01L29/185 , H01L29/41733 , H01L29/66742 , H01L29/78696 , H01L2933/0066
Abstract: A display device includes: a substrate; a thin-film transistor on the substrate; and a light-emitting diode electrically connected to the thin-film transistor, wherein the thin-film transistor includes: a semiconductor layer in which a source region, a drain region, and a channel region are defined; a gate electrode insulated from the semiconductor layer and overlapping the semiconductor layer; a source electrode electrically connected to the source region; and a drain electrode electrically connected to the drain region, wherein the semiconductor layer includes a crystallized metal chalcogenide including a transition metal and a chalcogen element and has a layered structure.
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