公开(公告)号：US20240375965A1

公开(公告)日：2024-11-14

申请号：US18691205

申请日：2022-10-04

Applicant: IMRA Europe SAS

Inventor： Radoslaw Chmielowski ,  Gerardo Larromona ,  Bruno Delatouche ,  Daniel Pere

IPC: C01B32/921 ,  C01B32/907

Abstract: MXene compound having a novel crystalline morphology, and process for fabricating a compound of MAX phase type for synthesis of said MXene compound. The invention firstly relates to a MXene compound advantageously having a crystalline morphology that is mostly in tablet form which may be obtained from a MAX phase precursor obtained by spark plasma sintering process whereby the powders of the mixture are insulated, and to a process for fabricating the MXene compound. The invention also relates to compound of MAX phase type obtained by spark plasma sintering process whereby the powders of the mixture are insulated. The invention also relates to a synthesis process of an MXene compound from said precursor, and to the MXene compound thus obtained advantageously having a crystalline morphology that is mostly in tablet form.

公开(公告)号：US20240207793A1

公开(公告)日：2024-06-27

申请号：US18512011

申请日：2023-11-16

Applicant: Research Institute of Chemical Defense , PLA Academy of Military Sciences

Inventor： Zhanguo Li ,  Jun Li ,  Yi Wang ,  Yong Pan ,  Jian LI

IPC: B01D69/12 ,  B01D69/14 ,  B01D71/02 ,  B01D71/56 ,  C01B32/907 ,  C08G69/04 ,  C08G69/32 ,  C08K3/14

CPC classification number: B01D69/1251 ,  B01D69/14111 ,  B01D71/02 ,  B01D71/56 ,  C01B32/907 ,  C08G69/04 ,  C08G69/32 ,  C08K3/14 ,  B01D61/025 ,  B01D2323/081 ,  B01D2323/082 ,  B01D2323/12 ,  C01P2004/64 ,  C08K2201/011

Abstract: The present disclosure belongs to the technical field of membrane separation, and discloses a preparation method of a Ti3C2Tx MXene quantum dot (MQD)-modified polyamide (PA) reverse osmosis (RO) membrane. The preparation method includes the following steps: subjecting a Ti3C2Tx MXene material to liquid nitrogen intercalation and interlayer expansion to obtain a Ti3C2Tx MQD nanomaterial; preparing an aqueous phase solution with the Ti3C2Tx MQD nanomaterial and an organic phase solution; soaking an ultrafiltration (UF) base membrane in the aqueous phase solution , and removing the aqueous phase solution on a surface of the UF base membrane through blow-drying; soaking the second UF base membrane in the organic phase solution to allow interfacial polymerization to form an active layer; and allowing a composite membrane obtained after the interfacial polymerization to stand, followed by a heat treatment to further promote the interfacial polymerization.

公开(公告)号：US20230165033A1

公开(公告)日：2023-05-25

申请号：US17995184

申请日：2021-04-02

Applicant: DREXEL UNIVERSITY

Inventor： Tae-woo LEE ,  Soyeong AHN ,  Kathleen Ann MALESKI ,  Yury GOGOTSI

IPC: H10K50/81 ,  G02F1/155 ,  H10K50/17 ,  G01N21/552 ,  C01B32/921 ,  C01B32/907

CPC classification number: H10K50/81 ,  G02F1/155 ,  H10K50/17 ,  G01N21/553 ,  C01B32/921 ,  C01B32/907 ,  G02F2202/16 ,  H10K2102/10

Abstract: Provided are MXene-containing electrodes, display devices, electrochromic devices, and other optoelectronic devices, which devices can include transparent and/or colored MXene materials. In particular, MXenes can be used as transparent conducting electrodes based on their comparatively high electrical conductivity and high work function. An electrode, comprising: a substrate; a portion of MXene material disposed on the substrate; a hole-injection material disposed on the MXene material; an organic layer in electronic communication with the hole-injection material; and a conductor material in electronic communication with the hole-injection material.

公开(公告)号：US20220411271A1

公开(公告)日：2022-12-29

申请号：US17763011

申请日：2020-09-29

Applicant: DOWA THERMOTECH CO., LTD.

Inventor： Satoru HABUKA ,  Hiroyuki MATSUOKA

IPC: C01B32/907 ,  C23C16/32 ,  C23C16/515

Abstract: A vanadium silicon carbide film contains vanadium, silicon, and carbon, in which the total of a vanadium element concentration, a silicon element concentration, and a carbon element concentration in the film is 90 at % or more.

公开(公告)号：US20220115660A1

公开(公告)日：2022-04-14

申请号：US17497026

申请日：2021-10-08

Applicant: The Trustees of Indiana University

Inventor： Babak Anasori ,  Weichen Hong ,  Srinivasa Kartik Nemani

IPC: H01M4/58 ,  C01B32/907

Abstract: A Composition of matter defined by the general formula of M1M2M3M4X3 wherein: X is carbon; and M1, M2, M3, and M4 each represent a different transition metal selected from the group consisting of Ti, Ta, Sc, Cr, Zr, Hf, Mo, V, and Nb.

公开(公告)号：US11142836B2

公开(公告)日：2021-10-12

申请号：US16204905

申请日：2018-11-29

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Kuo-Hsin Lin ,  Li-Duan Tsai ,  Wen-Hsuan Chao ,  Yu-Ming Lin ,  Pin-Hsin Yang ,  Hsiao-Chun Huang ,  Chiu-Ping Huang ,  Jiunn-Nan Lin

IPC: C25B11/075 ,  C01B21/06 ,  C23C14/06 ,  C25B1/04 ,  C23C14/34 ,  C01B32/907

Abstract: A method for manufacturing catalyst material is provided, which includes putting an M′ target and an M″ target into a nitrogen-containing atmosphere, in which M′ is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M″ is Nb, Ta, or a combination thereof. Powers are provided to the M′ target and the M″ target, respectively. Providing ions to bombard the M′ target and the M″ target to sputtering deposit M′aM″bN2 on a substrate, wherein 0.7≤a≤1.7, 0.3≤b≤1.3, and a+b=2, wherein M′aM″bN2 is a cubic crystal system.

公开(公告)号：US11014819B2

公开(公告)日：2021-05-25

申请号：US14864196

申请日：2015-09-24

Applicant: MELIOR INNOVATIONS, INC.

Inventor： Douglas M. Dukes ,  Ashish P. Diwanji ,  Andrew R. Hopkins ,  Walter J. Sherwood ,  Glenn Sandgren ,  Mark S. Land ,  Brian L. Benac

IPC: C01B32/907 ,  C04B35/56 ,  C04B35/571 ,  C04B35/64 ,  C08G77/20 ,  C04B35/80 ,  C04B35/515 ,  C08L83/04 ,  C08G77/50 ,  C09K8/80 ,  C08G77/12 ,  C08G77/00

Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

公开(公告)号：US20240417581A1

公开(公告)日：2024-12-19

申请号：US18408448

申请日：2024-01-09

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seon Joon KIM ,  Seung Sang HWANG ,  Albert LEE ,  Taegon OH ,  Tae Yun KO ,  Junpyo HONG

IPC: C09D11/52 ,  C01B32/907 ,  C09D11/033 ,  C09D11/037 ,  H05K9/00

Abstract: Disclosed in the present specification are a two-dimensional MXene surface-modified with a metal-organic network, a method of preparing the same, a MXene organic ink containing the same, and uses (e.g., an electromagnetic wave shielding material). In one aspect, the two-dimensional MXene surface-modified with a metal-organic network according to the present invention can use various organic ligands by linking the surface with the organic through the metal, and can be stably dispersed in various organic solvents, especially in industrial non-polar organic solvents as well as polar organic solvents, thereby being applied to a more general-purpose technologies, and securing stability against chemical oxidation to improve long-term stability.

公开(公告)号：US20240270984A1

公开(公告)日：2024-08-15

申请号：US18610748

申请日：2024-03-20

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masashi KOYANAGI

IPC: C09D5/24 ,  C01B32/907 ,  C08K9/02 ,  C09D7/40 ,  C09D7/62 ,  H01B1/20

CPC classification number: C09D5/24 ,  C01B32/907 ,  C09D7/62 ,  C09D7/70 ,  H01B1/20 ,  C01P2002/52 ,  C01P2004/20 ,  C01P2006/40 ,  C08K9/02 ,  C08K2201/001 ,  C08K2201/011

Abstract: A conductive two-dimensional particle-containing composition including: a conductive two-dimensional particle of a layered material including one or a plurality of layers; a dispersion medium having a relative permittivity greater than that of water; and a fluorine element and an oxygen element on a surface of the conductive two-dimensional particle, wherein the one or plurality of layers includes a layer body represented by: MmXn, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is 1 to 4, and m is more than n and 5 or less, and a modifier or terminal T existing on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom.

公开(公告)号：US11970777B2

公开(公告)日：2024-04-30

申请号：US17848600

申请日：2022-06-24

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC: C23C16/32 ,  C01B21/082 ,  C01B32/907 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

CPC classification number: C23C16/45553 ,  C01B21/0828 ,  C01B32/907 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45536

Abstract: Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.