中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.025 seconds)

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160307822A1

    公开(公告)日：2016-10-20

    申请号：US15196153

    申请日：2016-06-29

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： RYOSUKE USUI ,  TETSUZO UEDA

    IPC: H01L23/473 ,  H01L23/495 ,  H01L49/02 ,  H01L23/053 ,  H01L23/528

    CPC classification number: H01L23/473 ,  H01L23/053 ,  H01L23/49562 ,  H01L23/528 ,  H01L28/40 ,  H01L2924/0002 ,  H02M7/48 ,  H05K7/20927 ,  H01L2924/00

    Abstract: A semiconductor device includes a semiconductor module including a semiconductor element, a passive element, a cooling member, a first conductive member and a second conductive member. The cooling member is disposed between the semiconductor module and the passive element. And a first conductive member and a second conductive member electrically connect the semiconductor module and the passive element. Furthermore, two or more aspects of at least one of the first conductive member and the second conductive member face the cooling member.

    Abstract translation: 半导体器件包括半导体元件，半导体元件，无源元件，冷却元件，第一导电元件和第二导电元件。 冷却构件设置在半导体模块和无源元件之间。 并且第一导电构件和第二导电构件电连接半导体模块和无源元件。 此外，第一导电构件和第二导电构件中的至少一个的两个或多个方面面向冷却构件。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20160056245A1

    公开(公告)日：2016-02-25

    申请号：US14930628

    申请日：2015-11-02

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： YUSUKE KINOSHITA ,  SATOSHI TAMURA ,  TETSUZO UEDA

    IPC: H01L29/205 ,  H01L29/66 ,  H01L29/808

    CPC classification number: H01L29/205 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/66916 ,  H01L29/66924 ,  H01L29/7786 ,  H01L29/8086

    Abstract: A semiconductor device includes: a channel layer which is made of InpAlqGa1-p-qN (0≦p+q≦1, 0≦p, and 0≦q); a barrier layer which is formed on the channel layer and is made of InrAlsGa1-r-sN (0≦r+s≦1, 0≦r) having a bandgap larger than that of the channel layer; a diffusion suppression layer which is selectively formed on the barrier layer and is made of IntAluGa1-t-uN (0≦t+u≦1, 0≦t, and s>u); a p-type conductive layer which is formed on the diffusion suppression layer and is made of InxAlyGa1-x-yN (0≦x+y≦1, 0≦y) having p-type conductivity; and a gate electrode which is formed on the p-type conductive layer.

    Abstract translation: 半导体器件包括：由InpAlqGa1-p-qN（0＆nlE; p + q＆nlE; 1,0＆amp; nlE; p和0＆nlE; q）制成的沟道层; 阻挡层，其形成在沟道层上，并且由InrAlsGa1-r-sN（0＆lt; nlE; r + s＆nlE; 1,0＆amp; nlE; r）制成，其带隙大于沟道层的带隙; 扩散抑制层，其被选择性地形成在阻挡层上并由IntAluGa1-t-uN（0＆lt; nlE; t + u＆nlE; 1,0＆amp; nlE; t和s> u）制成; p型导电层，其形成在扩散抑制层上，由具有p型导电性的In x Al y Ga 1-x-y N（0＆lt; n 1; x + y＆nlE; 1,0＆amp; 以及形成在p型导电层上的栅电极。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150194483A1

    公开(公告)日：2015-07-09

    申请号：US14663140

    申请日：2015-03-19

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： RYO KAJITANI ,  TETSUZO UEDA ,  YOSHIHARU ANDA ,  NAOHIRO TSURUMI ,  SATOSHI NAKAZAWA

    IPC: H01L29/06 ,  H01L29/78 ,  H01L29/40 ,  H01L29/51 ,  H01L29/20 ,  H01L29/205

    CPC classification number: H01L29/0611 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/51 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/78

    Abstract: An object is to achieve an increase in gain by reducing a current collapse, and reducing Cgd and Rg. A semiconductor device according to the present invention includes a substrate; a first semiconductor layer disposed on the substrate and made of a Group III nitride semiconductor; a second semiconductor layer disposed on the first semiconductor layer and made of a Group III nitride semiconductor; a gate electrode, a source electrode, and a drain electrode disposed on the second semiconductor layer; a first field plate electrode disposed on the second semiconductor layer; and a second field plate electrode disposed on the first field plate electrode, in which the first field plate electrode and the second field plate electrode are disposed between the gate electrode and the drain electrode.

    Abstract translation: 目的是通过减少电流崩溃来实现增益的增加，并减少Cgd和Rg。 根据本发明的半导体器件包括：衬底; 设置在所述基板上并由III族氮化物半导体构成的第一半导体层; 设置在第一半导体层上并由III族氮化物半导体构成的第二半导体层; 设置在所述第二半导体层上的栅电极，源电极和漏电极; 设置在所述第二半导体层上的第一场板电极; 以及设置在第一场极板电极上的第二场极板电极，其中第一场极板电极和第二场极板电极设置在栅电极和漏电极之间。

    FIELD-EFFECT TRANSISTOR
    6.
    发明申请
    FIELD-EFFECT TRANSISTOR 有权
    场效应晶体管

    公开(公告)号：US20150303293A1

    公开(公告)日：2015-10-22

    申请号：US14790064

    申请日：2015-07-02

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： KENICHIRO TANAKA ,  SHINICHI KOHDA ,  MASAHIRO ISHIDA ,  TETSUZO UEDA

    IPC: H01L29/778 ,  H01L29/207 ,  H01L29/06 ,  H01L29/36 ,  H01L29/205

    CPC classification number: H01L29/7787 ,  H01L29/0684 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/36 ,  H01L29/7786

    Abstract: A field-effect transistor includes a codoped layer made of AlxGa1-xN (0≦x≦1) and formed on a p-type Si substrate, a GaN layer formed on the codoped layer, and an AlGaN layer formed on the GaN layer. The codoped layer contains C and Si as impurity elements. The impurity concentration of C in the codoped layer is equal to or higher than 5×1017/cm3. The impurity concentration of Si in the codoped layer is lower than the impurity concentration of C. The impurity concentration of C in the GaN layer is equal to or lower than 1×1017/cm3. The thickness of the GaN layer is equal to or greater than 0.75 μm.

    Abstract translation: 场效应晶体管包括由Al x Ga 1-x N（0＆nlE; x＆nlE; 1）构成并且形成在p型Si衬底上的共掺层，在共掺层上形成的GaN层和形成在GaN层上的AlGaN层。 共掺层含有C和Si作为杂质元素。 共掺层中的C的杂质浓度等于或高于5×1017 / cm3。 共掺层中Si的杂质浓度低于C的杂质浓度.Ca层中的C的杂质浓度等于或低于1×1017 / cm3。 GaN层的厚度等于或大于0.75μm。

Patent Agency Ranking