公开(公告)号：US10447005B2

公开(公告)日：2019-10-15

申请号：US15950846

申请日：2018-04-11

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kazuhiko Yamanaka ,  Kiyoshi Morimoto ,  Hideki Kasugai ,  Kazuyuki Matsumura ,  Hideo Yamaguchi ,  Nobuyasu Suzuki

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/022 ,  G02B19/00 ,  H01S5/02

Abstract: A light source device includes: a semiconductor light-emitting device including a flat-shaped base having a first main surface on a first side and a second main surface and a semiconductor light-emitting element disposed on the first side; a first fixing component having a first through-hole and a first pressing surface that presses the first main surface; and a second fixing component having a second through-hole and a second pressing surface that presses the second main surface. The base is fixed between the first and second pressing surfaces by an engagement between a first inner surface surrounding the first through-hole of the first fixing component and a second outer surface of the second fixing component. A distance between the first and second pressing surfaces is smaller than or equal to a thickness of the base, and a void is formed lateral to the base between the first and second pressing surfaces.

公开(公告)号：US09551474B2

公开(公告)日：2017-01-24

申请号：US14645462

申请日：2015-03-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Nobuaki Nagao ,  Seigo Shiraishi ,  Yoshihisa Nagasaki ,  Nobuyasu Suzuki ,  Kazuhiko Yamanaka ,  Kiyoshi Morimoto ,  Takahiro Hamada

IPC: F21S4/00 ,  F21V3/00 ,  F21V5/00 ,  F21V21/30 ,  F21V9/00 ,  F21S8/10 ,  F21V29/70 ,  F21V29/89 ,  H01S5/00 ,  H01L33/50 ,  H01L33/64 ,  F21V9/16 ,  F21Y101/00

CPC classification number: F21V9/00 ,  F21K9/61 ,  F21K9/64 ,  F21S41/14 ,  F21S41/16 ,  F21S45/47 ,  F21V9/30 ,  F21V29/70 ,  F21V29/89 ,  F21Y2101/00 ,  F21Y2115/30 ,  H01L33/50 ,  H01L33/507 ,  H01L33/644 ,  H01S5/005

Abstract: A wavelength conversion member includes: a heat conducting layer; a sapphire substrate having a third surface directly contact with a second surface of the heat conducting layer and the fourth surface opposite to the third surface; and a phosphor layer having a fifth surface directly contact with the fourth surface and a sixth surface opposite to the fifth surface, the phosphor layer including phosphor. At least one of an area of a first surface and an area of the second surface of the heat conducting layer is at least 2800 times as large as an area of the sixth surface of the phosphor layer. At least one of an area of the third surface and an area of the fourth surface of the sapphire substrate is at least two times as large as the area of the sixth surface of the phosphor layer.

Abstract translation: 波长转换构件包括：导热层; 蓝宝石衬底，其具有与导热层的第二表面和与第三表面相对的第四表面直接接触的第三表面; 以及具有与第四表面直接接触的第五表面和与第五表面相对的第六表面的磷光体层，荧光体层包括磷光体。 导热层的第一表面区域和第二表面区域中的至少一个区域是荧光体层的第六表面的面积的至少2800倍。 第三表面的区域和蓝宝石衬底的第四表面的面积中的至少一个是荧光体层的第六表面的面积的至少两倍。

公开(公告)号：US11329198B2

公开(公告)日：2022-05-10

申请号：US17414877

申请日：2019-10-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takahiro Hamada ,  Yukihiko Sugio ,  Nobuyasu Suzuki ,  Yoshihisa Nagasaki

IPC: H01L33/50 ,  F21V9/30 ,  G03B21/20

Abstract: A wavelength conversion device includes a substrate, a matrix supported by the substrate and containing inorganic material, a phosphor embedded in the matrix, and filler particles embedded in the matrix. A linear expansion coefficient of the filler particles is equal to or larger than 25 ppm/K and equal to or smaller than 790 ppm/K, and is larger than a linear expansion coefficient of the matrix. This wavelength conversion device suppresses warping of the substrate.