-
公开(公告)号:US20250022682A1
公开(公告)日:2025-01-16
申请号:US18766729
申请日:2024-07-09
Inventor: Shogo OKITA , Takahiro MIYAI , Yoshiyuki WADA , Naoaki TAKEDA , Toshiyuki TAKASAKI , Hisao NAGAI , Seiya NAGANO
IPC: H01J37/32
Abstract: A plasma generation unit includes: a first coil that includes first conductors that are connected in parallel to each other; and a first distribution portion that distributes, to each of the first conductors, first high frequency power to be supplied to the first coil. The first distribution portion includes: a first input portion to which the first high frequency power is input; a first branch portion at which the first high frequency power input to the first input portion is divided and delivered into first branch lines; and second branch portions at each of which a corresponding one of the first branch lines branches out into second branch lines. Each of the second branch lines is connected to one of first application portions that are included in the first conductors. The first branch lines have a substantially equal length. The second branch lines have a substantially equal length.
-
公开(公告)号:US20250014877A1
公开(公告)日:2025-01-09
申请号:US18761458
申请日:2024-07-02
Inventor: Hisao NAGAI , Shogo OKITA , Toshiyuki TAKASAKI , Seiya NAGANO , Naoaki TAKEDA , Takahiro MIYAI
IPC: H01J37/32
Abstract: A plasma processing apparatus including a chamber, a placement unit which is disposed in the chamber and on which a substrate is to be placed, a plasma generation unit configured to generate a plasma within the chamber, a gas supply unit configured to supply a raw material gas of the plasma into the chamber, a measurement unit configured to measure and output a distribution information regarding a plasma distribution in the chamber, a control unit configured to control the plasma generation unit and the gas supply unit so as to repeat a unit processing on the substrate, a memory unit configured to store process conditions including conditions for the unit processing, and a modification unit configured to modify the process conditions. The measurement unit measures the distribution information (N) in the unit processing (N) at an Nth time, where N is an integer. When the distribution information (N) satisfies a predetermined condition, the modification unit modifies the process conditions in the unit processing (M) at an Mth time, where M is any integer equal to or greater than (N+1).
-
公开(公告)号:US20240014008A1
公开(公告)日:2024-01-11
申请号:US18336139
申请日:2023-06-16
Inventor: Naoaki TAKEDA , Shogo OKITA , Seiya NAGANO , Toshihiro WADA , Takahiro MIYAI
IPC: H01J37/32
CPC classification number: H01J37/32183
Abstract: A disclosed plasma processing apparatus 10 includes: a chamber 11 having an opening 11a; a stage 12 disposed in the chamber 11, the stage for placing an object to be processed; a dielectric member 13 closing the opening 11a; and a plasma generation unit 16 disposed on the opposite side to the chamber 11 with reference to the dielectric member 13, and configured to, when applied with a high-frequency power, generate a plasma in the chamber 11. The plasma generation unit 16 has a first coil 17 including one or a plurality of first conductors 17a connected in parallel with each other, and a second coil 18 disposed so as to surround the first coil 17 and including a plurality of second conductors 18a connected in parallel with each other. The number of the second conductors 18a is greater than the number of the first conductors 17a.
-
-