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Patent Agency Ranking
公开(公告)号：US20180240697A1
公开(公告)日：2018-08-23
申请号：US15888161
申请日：2018-02-05
Inventor： Shogo OKITA , Takahiro MIYAI
IPC: H01L21/683 , H01J37/32 , H01L21/67 , H01L21/78 , H01L21/3065 , H01L21/66
CPC classification number: H01L21/6833 , H01J37/3244 , H01J37/32715 , H01J37/32816 , H01J37/3299 , H01J2237/24585 , H01J2237/334 , H01L21/3065 , H01L21/30655 , H01L21/31138 , H01L21/67069 , H01L21/67092 , H01L21/67109 , H01L21/67253 , H01L21/6831 , H01L21/6835 , H01L21/68735 , H01L21/68742 , H01L21/68785 , H01L21/78 , H01L22/20 , H01L2221/68327
Abstract: Provided is a plasma processing apparatus which comprises a chamber, a stage configured to set a holding sheet and a substrate held thereon, a securing mechanism configured to secure the holding sheet on the stage, a plasma generator including a first electrode and a first high-frequency power supply, and a determiner for determining a contact status between the holding sheet and the stage, wherein a gas through-hole is arranged on a surface of the stage in an annular region defined between an inner edge of a frame set on the stage and an outer edge of the substrate, and wherein the determiner is configured to determine the contact status in accordance with a pressure of a gas in the gas introduction conduit and/or a regulation data for regulating the pressure of the gas, the gas being introduced between the stage and the holding sheet from the gas through-hole.
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公开(公告)号：US20250022682A1
公开(公告)日：2025-01-16
申请号：US18766729
申请日：2024-07-09
Inventor： Shogo OKITA , Takahiro MIYAI , Yoshiyuki WADA , Naoaki TAKEDA , Toshiyuki TAKASAKI , Hisao NAGAI , Seiya NAGANO
IPC: H01J37/32
Abstract: A plasma generation unit includes: a first coil that includes first conductors that are connected in parallel to each other; and a first distribution portion that distributes, to each of the first conductors, first high frequency power to be supplied to the first coil. The first distribution portion includes: a first input portion to which the first high frequency power is input; a first branch portion at which the first high frequency power input to the first input portion is divided and delivered into first branch lines; and second branch portions at each of which a corresponding one of the first branch lines branches out into second branch lines. Each of the second branch lines is connected to one of first application portions that are included in the first conductors. The first branch lines have a substantially equal length. The second branch lines have a substantially equal length.
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公开(公告)号：US20250014877A1
公开(公告)日：2025-01-09
申请号：US18761458
申请日：2024-07-02
Inventor： Hisao NAGAI , Shogo OKITA , Toshiyuki TAKASAKI , Seiya NAGANO , Naoaki TAKEDA , Takahiro MIYAI
IPC: H01J37/32
Abstract: A plasma processing apparatus including a chamber, a placement unit which is disposed in the chamber and on which a substrate is to be placed, a plasma generation unit configured to generate a plasma within the chamber, a gas supply unit configured to supply a raw material gas of the plasma into the chamber, a measurement unit configured to measure and output a distribution information regarding a plasma distribution in the chamber, a control unit configured to control the plasma generation unit and the gas supply unit so as to repeat a unit processing on the substrate, a memory unit configured to store process conditions including conditions for the unit processing, and a modification unit configured to modify the process conditions. The measurement unit measures the distribution information (N) in the unit processing (N) at an Nth time, where N is an integer. When the distribution information (N) satisfies a predetermined condition, the modification unit modifies the process conditions in the unit processing (M) at an Mth time, where M is any integer equal to or greater than (N+1).
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公开(公告)号：US20240014008A1
公开(公告)日：2024-01-11
申请号：US18336139
申请日：2023-06-16
Inventor： Naoaki TAKEDA , Shogo OKITA , Seiya NAGANO , Toshihiro WADA , Takahiro MIYAI
IPC: H01J37/32
CPC classification number: H01J37/32183
Abstract: A disclosed plasma processing apparatus 10 includes: a chamber 11 having an opening 11a; a stage 12 disposed in the chamber 11, the stage for placing an object to be processed; a dielectric member 13 closing the opening 11a; and a plasma generation unit 16 disposed on the opposite side to the chamber 11 with reference to the dielectric member 13, and configured to, when applied with a high-frequency power, generate a plasma in the chamber 11. The plasma generation unit 16 has a first coil 17 including one or a plurality of first conductors 17a connected in parallel with each other, and a second coil 18 disposed so as to surround the first coil 17 and including a plurality of second conductors 18a connected in parallel with each other. The number of the second conductors 18a is greater than the number of the first conductors 17a.
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公开(公告)号：US20230170186A1
公开(公告)日：2023-06-01
申请号：US18056294
申请日：2022-11-17
Inventor： Shogo OKITA , Yoshiyuki WADA , Takahiro MIYAI , Naoaki TAKEDA , Toshihiro WADA , Toshiyuki TAKASAKI
IPC: H01J37/32
CPC classification number: H01J37/32266 , H01J37/32449 , H01J2237/141
Abstract: Disclosed is a plasma processing apparatus 10 including a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction path 15, and an induction coil 16. The induction coil 16 includes a first induction coil 17 installed so as to overlap a central region R1 of the dielectric member 13, and a second induction coil 18 installed so as to overlap a peripheral region R2 outside the central region R1 of the dielectric member 13. The cover 14 has a first gas hole 14c formed at a position overlapping the central region R1 and a second gas hole 14d formed at a position overlapping the peripheral region R2. The gas introduction path 15 has a first gas introduction path 15a communicating with the first gas hole 14c and a second gas introduction path 15b communicating with the second gas hole 14d.
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