Abstract:
In an electronic component mounting structure, a plurality of bumps formed on an electronic component is joined to a plurality of electrodes formed on a substrate by way of joining portions formed with the bumps and solder. Bonding portions bond the electronic component to the substrate and the bonding portions are formed of thermosetting materials obtained by curing thermosetting resins having a curing temperature which is lower than a melting point of the solder between the electronic component and the substrate. The thermosetting materials come in contact with a nearest-neighboring joining portion in the bonding portions.
Abstract:
A plasma generation unit includes: a first coil that includes first conductors that are connected in parallel to each other; and a first distribution portion that distributes, to each of the first conductors, first high frequency power to be supplied to the first coil. The first distribution portion includes: a first input portion to which the first high frequency power is input; a first branch portion at which the first high frequency power input to the first input portion is divided and delivered into first branch lines; and second branch portions at each of which a corresponding one of the first branch lines branches out into second branch lines. Each of the second branch lines is connected to one of first application portions that are included in the first conductors. The first branch lines have a substantially equal length. The second branch lines have a substantially equal length.
Abstract:
Disclosed is a plasma processing apparatus 10 including a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction path 15, and an induction coil 16. The induction coil 16 includes a first induction coil 17 installed so as to overlap a central region R1 of the dielectric member 13, and a second induction coil 18 installed so as to overlap a peripheral region R2 outside the central region R1 of the dielectric member 13. The cover 14 has a first gas hole 14c formed at a position overlapping the central region R1 and a second gas hole 14d formed at a position overlapping the peripheral region R2. The gas introduction path 15 has a first gas introduction path 15a communicating with the first gas hole 14c and a second gas introduction path 15b communicating with the second gas hole 14d.