公开(公告)号：US20220122809A1

公开(公告)日：2022-04-21

申请号：US17503611

申请日：2021-10-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Toshihiro WADA ,  Naoaki TAKEDA

IPC: H01J37/32

Abstract: A plasma processing apparatus 100 including: a chamber 101 having a dielectric window; a coil 102 placed outside the chamber so as to face the dielectric window; a FS electrode 103 having a plate shape and placed on the chamber side of the coil; a first power source 104 for supplying a high-frequency power of a first frequency to the coil 102; a second power source 105 for supplying a high-frequency power of a second frequency which is different from the first frequency, to the FS electrode 103; a first matcher 106 placed between the first power source and the coil; a second matcher 107 placed between the second power source and the FS electrode; and a first frequency attenuation filter connected between the second matcher and the FS electrode, and configured to allow transmission of the high-frequency power of the second frequency and inhibit transmission of the high-frequency power of the first frequency.

公开(公告)号：US20160064188A1

公开(公告)日：2016-03-03

申请号：US14818415

申请日：2015-08-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shogo OKITA ,  Hiromi ASAKURA ,  Syouzou WATANABE ,  Noriyuki MATSUBARA ,  Mitsuru HIROSHIMA ,  Toshihiro WADA

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32366 ,  H01J37/32733 ,  H01L21/681

Abstract: A plasma processing apparatus that performs plasma processing to a substrate held on a transport carrier including a frame and a holding sheet that covers an opening of the frame includes: a transport mechanism that transports the transport carrier; a position measuring section that measures a position of the substrate to the frame; a plasma processing section that includes a plasma processing stage on which the transport carrier is loaded and a cover that covers the frame and a part of the holding sheet loaded on the plasma processing stage, and has a window section for exposing a part of the substrate; and a control section that controls the transport mechanism such that the transport carrier is loaded on the plasma processing stage to satisfy a positional relationship between the window section and the substrate based on the position information of the substrate to the frame.

Abstract translation: 对保持在包括框架的运送载体上的基板和覆盖框架的开口的保持片进行等离子体处理的等离子体处理装置包括：运送运送托架的运送机构; 位置测量部，其测量所述基板与所述框架的位置; 等离子体处理部，其包括装载有运送载体的等离子体处理台和覆盖框架的盖和负载在等离子体处理台上的保持片的一部分，并具有用于使基板的一部分露出的窗口部 ; 以及控制部，其控制所述输送机构，使得所述输送载体基于所述基板到所述框架的位置信息而被载载在所述等离子体处理台上以满足所述窗口部和所述基板之间的位置关系。

公开(公告)号：US20240014008A1

公开(公告)日：2024-01-11

申请号：US18336139

申请日：2023-06-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Naoaki TAKEDA ,  Shogo OKITA ,  Seiya NAGANO ,  Toshihiro WADA ,  Takahiro MIYAI

IPC: H01J37/32

CPC classification number: H01J37/32183

Abstract: A disclosed plasma processing apparatus 10 includes: a chamber 11 having an opening 11a; a stage 12 disposed in the chamber 11, the stage for placing an object to be processed; a dielectric member 13 closing the opening 11a; and a plasma generation unit 16 disposed on the opposite side to the chamber 11 with reference to the dielectric member 13, and configured to, when applied with a high-frequency power, generate a plasma in the chamber 11. The plasma generation unit 16 has a first coil 17 including one or a plurality of first conductors 17a connected in parallel with each other, and a second coil 18 disposed so as to surround the first coil 17 and including a plurality of second conductors 18a connected in parallel with each other. The number of the second conductors 18a is greater than the number of the first conductors 17a.

公开(公告)号：US20230170186A1

公开(公告)日：2023-06-01

申请号：US18056294

申请日：2022-11-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shogo OKITA ,  Yoshiyuki WADA ,  Takahiro MIYAI ,  Naoaki TAKEDA ,  Toshihiro WADA ,  Toshiyuki TAKASAKI

IPC: H01J37/32

CPC classification number: H01J37/32266 ,  H01J37/32449 ,  H01J2237/141

Abstract: Disclosed is a plasma processing apparatus 10 including a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction path 15, and an induction coil 16. The induction coil 16 includes a first induction coil 17 installed so as to overlap a central region R1 of the dielectric member 13, and a second induction coil 18 installed so as to overlap a peripheral region R2 outside the central region R1 of the dielectric member 13. The cover 14 has a first gas hole 14c formed at a position overlapping the central region R1 and a second gas hole 14d formed at a position overlapping the peripheral region R2. The gas introduction path 15 has a first gas introduction path 15a communicating with the first gas hole 14c and a second gas introduction path 15b communicating with the second gas hole 14d.