公开(公告)号：US20180216244A1

公开(公告)日：2018-08-02

申请号：US15746581

申请日：2016-06-14

申请人： Panasonic Intellectual Property Management Co., Ltd ,  Geomatec Co., Ltd.

发明人： Takaiki NOMURA ,  Takahiro ITO ,  Kazuhito HATO

IPC分类号： C25B11/04 ,  C25B1/00 ,  C25B1/04 ,  C25B9/06 ,  C30B23/02 ,  C30B25/04 ,  C30B25/18 ,  C30B29/16 ,  C30B29/38 ,  C30B29/68

CPC分类号： C25B11/0478 ,  C25B1/003 ,  C25B1/04 ,  C25B9/06 ,  C25B11/0405 ,  C30B23/025 ,  C30B25/04 ,  C30B25/18 ,  C30B29/16 ,  C30B29/22 ,  C30B29/38 ,  C30B29/68 ,  H01G9/20 ,  Y02E60/366 ,  Y02P20/135

摘要： A photoelectrode (120) of the present disclosure includes: a substrate (121); a ZnO conductive film (122) which is provided on the substrate (121) and in which Zn is partially substituted by at least one element selected from Ga and Al; and a semiconductor film (123) which is provided on an opposite side of the substrate (121) with respect to the ZnO conductive film (122) and which is composed of a nitride or an oxynitride of at least one metal element selected from metal elements of groups 4A, 5A, 6A, and 3B.

公开(公告)号：US20160333485A1

公开(公告)日：2016-11-17

申请号：US15221212

申请日：2016-07-27

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Satoru TAMURA ,  Takaiki NOMURA ,  Takahiro SUZUKI ,  Kenichi TOKUHIRO ,  Noboru TANIGUCHI ,  Kazuhito HATO ,  Nobuhiro MIYATA

IPC分类号： C25B1/00 ,  C25B1/04 ,  B01J35/00 ,  C25B11/04

CPC分类号： C25B1/003 ,  B01J35/004 ,  C01B3/042 ,  C25B1/04 ,  C25B11/0405 ,  C25B11/0478 ,  H01G9/2027 ,  H01M8/0656 ,  H01M16/003 ,  Y02E10/542 ,  Y02E60/364 ,  Y02E60/366 ,  Y02P20/135 ,  Y02P70/521

摘要： A photoelectrode (100) of the present invention includes a conductive layer (12) and a photocatalytic layer (13) provided on the conductive layer (12). The conductive layer (12) is made of a metal nitride. The photocatalytic layer (13) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer (13) is made of a n-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is smaller than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13). When the photocatalytic layer (13) is made of a p-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is larger than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).

摘要翻译： 本发明的光电极（100）包括设置在导电层（12）上的导电层（12）和光催化层（13）。 导电层（12）由金属氮化物制成。 光催化层（13）由选自氮化物半导体和氧氮化物半导体中的至少一种制成。 当光催化层（13）由n型半导体制成时，导电层（12）的真空度与费米能级之间的能量差小于真空级与费米能级之间的能量差 光催化层（13）。 当光催化层（13）由p型半导体制成时，导电层（12）的真空度与费米能级之间的能量差大于真空度与费米能级之间的能量差 光催化层（13）。