摘要:
A process for the bioconversion of a nitrile to its corresponding amide product, particularly acrylonitrile to acrylamide which is used for forming polymers. The process uses a thermophilic bacterium having a nitrile hydratase activity that is constitutively expressed, activated by cobalt ions, stable at 60° C., and is most active between 20° C. to 70° C. with optimum activity at 55° C. Alternatively, the process uses the enzyme extracted from the thermophilic bacterium to convert a nitrile to its amide product. The genes encoding nitrile hydratase and amidase are described in which the former is useful for the conversion of an nitrile to its amide and the later is useful for the conversion of an amide to its acid.
摘要:
A process for the bioconversion of a nitrile to its corresponding amide product, particularly acrylonitrile to acrylamide which is used for forming polymers. The process uses a thermophilic bacterium having a nitrile hydratase activity that is constitutively expressed, activated by cobalt ions, stable at 60° C., and is most active between 20° C. to 70° C. with optimum activity at 55° C. Alternatively, the process uses the enzyme extracted from the thermophilic bacterium to convert a nitrile to its amide product. The genes encoding nitrile hydratase and amidase are described in which the former is useful for the conversion of an nitrile to its amide and the later is useful for the conversion of an amide to its acid.
摘要:
A process for the bioconversion of a nitrile to its corresponding amide product, particularly acrylonitrile to acrylamide which is used for forming polymers. The process uses a thermophilic bacterium having a nitrile hydratase activity that is constitutively expressed, activated by cobalt ions, stable at 60.degree. C., and is most active between 20.degree. C. to 70.degree. C. with optimum activity at 55.degree. C. Alternatively, the process uses the enzyme extracted from the thermophilic bacterium to convert a nitrile to its amide product. The genes encoding nitrile hydratase and amidase are described in which the former is useful for the conversion of an nitrile to its amide and the later is useful for the conversion of an amide to its acid.
摘要:
A process for the bioconversion of a nitrile to its corresponding amide product, particularly acrylonitrile to acrylamide which is used for forming polymers. The process uses a thermophilic bacterium having a nitrile hydratase activity that is constitutively expressed, activated by cobalt ions, stable at 60° C., and is most active between 20° C. to 70° C. with optimum activity at 55° C. Alternatively, the process uses the enzyme extracted from the thermophilic bacterium to convert a nitrile to its amide product. The genes encoding nitrile hydratase and amidase are described in which the former is useful for the conversion of an nitrile to its amide and the later is useful for the conversion of an amide to its acid.
摘要:
A process for the bioconversion of a nitrile to its corresponding amide product, particularly acrylonitrile to acrylamide which is used for forming polymers. The process uses a thermophilic bacterium having a nitrile hydratase activity that is constitutively expressed, activated by cobalt ions, stable at 60° C., and is most active between 20° C. to 70° C. with optimum activity at 55° C. Alternatively, the process uses the enzyme extracted from the thermophilic bacterium to convert a nitrile to its amide product. The genes encoding nitrile hydratase and amidase are described in which the former is useful for the conversion of an nitrile to its amide and the later is useful for the conversion of an amide to its acid.
摘要:
The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.
摘要:
Disclosed herein is a printed circuit board for an optical waveguide, including: a substrate; an insulation layer having a through hole and formed on the substrate; a lower clad layer formed on a bottom of the through hole; core part formed on the lower clad layer; and an upper clad layer formed on the lower clad layer and the core part and thus covering an exposed surface of the core part.
摘要:
Disclosed herein is an optical element package substrate configured such that electric wiring substrates having a cavity are layered on both sides of an optical waveguide, an optical element package is mounted in the electric wiring substrates, and an optical element mounted on the surface of the optical element package is housed in the cavity, so that the distance between the optical element and the optical waveguide is decreased, thereby increasing optical connection efficiency.
摘要:
Disclosed herein is a printed circuit board including an optical waveguide and a method of manufacturing the board. In the board, the optical waveguide includes a metal layer extending portion integrally connected to a metal layer constituting a mirror formed in the optical waveguide. Since the method of the present invention creates the mirror using electroless plating, which is typically used in a process of manufacturing general printed circuit boards, it is suitable for the manufacture of printed circuit boards having a large area, and the mirror has high reflectivity and is efficient in terms of material consumption.
摘要:
Disclosed herein is a printed circuit board for an optical waveguide, including a base board, and an optical waveguide formed on the base board. The optical waveguide includes a lower clad layer formed on the base board, an insulation layer formed on the lower clad layer and having a core-forming through-hole, a core part formed on a region of the lower clad layer, which is exposed through the through-hole, and an upper clad layer formed in the through-hole and on the insulation layer.