摘要:
The method described uses a Skip-Over technique which requires a set of muxes at the input and output of a block that is to be repaired. The improved method of implementing I/O redundancy control logic has a minimal impact to both chip area and chip wire tracks. To overcome problems of required real estate usage on a chip that was undesirable enables use of odd and even decoder outputs that can share a single wire track, the same wire being utilizable for both odd and even decoder outputs. In order to implement the decode and carry function as a centralized function, there arises a requirement that logically adjacent decode circuits (decoders connected by a carry signal) should be physically close together to minimize the overhead of the carry wiring. If the decode structure and the mux structure are arranged orthogonal to each other, then each decoder output would require a wire track. The described method however, allows odd and even decoder outputs to share the same wire track. This reduces the number of wire tracks from 1 track per I/O to 1 track per 2 I/Os.
摘要:
An exemplary embodiment of the present invention is a system for implementing a column redundancy scheme for arrays with controls that span multiple data bits. The system includes an array of data bits for receiving data inputs, a spare data bit and a field control input line. Also included in the system is circuitry to separate a field control signal from the field control input line into one or more individual control signals for activating a corresponding data bit in the array or for input to a multiplexor. The system further comprises circuitry to steer around a defective data bit in the array. This circuitry includes: a field control signal multiplexor corresponding to each field control signal; a spare control signal multiplexor to activate the spare data bit; a data multiplexor corresponding to each of the data bits in the array; and a spare data multiplexor to steer one of the data inputs to the spare data bit. The system also includes programmable logic in communication with the field control signal multiplexor, the spare control signal multiplexor, the data multiplexor and the spare data multiplexor to cause the steer around to take place in response to detecting a defective data bit in the array.
摘要:
ABIST apparatus with integrated directory compare logic functionality, and ABIST error detection functionality. The apparatus includes two subsystems NOR'ed together. The first subsystem is for bit-wise logically ANDing corresponding array valid bits and tag valid inputs, generating “0” for a match and “1” for a mis-match, and logically ORing the bit-wise result to generate a “1” hit if there are any bit-wise mismatches. The second subsystem further receives ABIST control logic as an input to either: (a). combine array valid bits tag valid inputs to produce valid output, or (b) compare array valid bits with tag valid inputs. The apparatus further includes logical NOR functionality for the outputs of the first and second subsystems.
摘要:
Embodiments of the invention include a circuit for interfacing local bitlines to a global bitline. The circuit includes an interface line coupled to a local bitline through a local bitline device. A global output device has an input coupled to the interface line and an output coupled to the global bitline. A clamping device is coupled to the interface line, the clamping device coupling the interface line to ground in response to a data in signal. A memory having the circuit is also disclosed.
摘要:
A method of generating access signals for a memory array. The method includes receiving a synchronization signal and generating a wordline select signal in response to the synchronization signal. A local precharge signal is generated in response to the synchronization signal. A precharge signal is generated in response to the synchronization signal, the precharge signal being a row signal for regulating memory array read operations. A write signal is generated in response to the synchronization signal, the write signal being a row signal for regulating memory array write operations.
摘要:
Write control circuitry and control method are provided for a memory array configured with multiple memory subarrays. The write control circuitry includes multiple subarray write controllers associated with the multiple memory subarrays, each subarray write controller selectively enabling a local write control signal to its associated memory subarray. The selectively enabling is responsive to a received subarray select signal, wherein only one subarray select signal is active at a time. At least some subarray write controllers are powered at least in part via a switched power node, wherein powering of the switched power node is distributively implemented among the subarray write controllers. In one example, the distributively implemented powering of the switched power node is accomplished via multiple inverters distributed among the subarray write controllers, each inverter having an output coupled to the switched power node, and an input coupled to receive a global write enable signal.
摘要:
A system for generating one or more common address signals for multi-port memory arrays. The system includes circuitry receiving one or more read address signal; circuitry receiving one or more write address signal; circuitry receiving an array clock signal; circuitry receiving one or more enable signal; and circuitry generating the common address signals in response to the enable signal, the array clock signal and one of the read address signal and write address signal.
摘要:
The invention may comprise circuit for programmable control of a discharge deactivation signal when interfacing local bitlines to a global bitline or other circuit. The invention may also comprise a method for programmable ground circuit control for control of a discharge signal deactivation when interfacing local bitlines to a global bitline via a bitline evaluation discharge device comprising: providing input logic states to inputs of a controller circuit; outputting an adjustable ground value from the controller circuit; and controlling the bitline evaluation discharge device with the adjustable ground value.
摘要:
A circuit and a method for writing a binary value to a memory cell are provided. The circuit includes a first field-effect transistor having a first drain, a first drain, and a first gate operably coupled between the first drain and the first source. The first drain is operably coupled to a first memory cell. The first gate configured to receive a first data signal. The circuit further includes a second field-effect transistor having a second drain, a second source, and a second gate operably coupled between the second drain and the second source. The drain source is operably coupled to the first memory cell. The second gate is configured to receive a second data signal. The circuit further includes a first signal inverter having a first input terminal and a first output terminal. The first output terminal is operably coupled to both of the first and second sources. The first signal inverter is configured to output a first control signal on the first output terminal when the first input terminal receives a second control signal. When the first control signal has a second logic level and the first data signal has a first logic level and the second data signal has the second logic level, the first and second field-effect transistors induce the first memory cell to store a first binary value.
摘要:
Write control circuitry and control method are provided for a memory array configured with multiple memory subarrays. The write control circuitry includes multiple subarray write controllers associated with the multiple memory subarrays, each subarray write controller selectively enabling a local write control signal to its associated memory subarray. The selectively enabling is responsive to a received subarray select signal, wherein only one subarray select signal is active at a time. At least some subarray write controllers are powered at least in part via a switched power node, wherein powering of the switched power node is distributively implemented among the subarray write controllers. In one example, the distributively implemented powering of the switched power node is accomplished via multiple inverters distributed among the subarray write controllers, each inverter having an output coupled to the switched power node, and an input coupled to receive a global write enable signal.