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18 条记录 (耗时 0.027 秒)

    Deposition of dopant impurities and pulsed energy drive-in
    1.
    发明授权
    Deposition of dopant impurities and pulsed energy drive-in 失效
    掺杂杂质沉积和脉冲能量驱入

    公开(公告)号：US5918140A

    公开(公告)日：1999-06-29

    申请号：US876414

    申请日：1997-06-16

    申请人： Paul Wickboldt ,  Paul G. Carey ,  Patrick M. Smith ,  Albert R. Ellingboe

    发明人： Paul Wickboldt ,  Paul G. Carey ,  Patrick M. Smith ,  Albert R. Ellingboe

    IPC分类号： H01L21/225 ,  H01L21/223

    CPC分类号： H01L21/2254

    摘要： A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

    摘要翻译： 使用气体浸渍激光掺杂（GILD）技术增强可实现掺杂剂掺杂的半导体掺杂工艺。 增强的掺杂是通过首先在半导体表面上沉积掺杂剂原子的薄层，然后从激光或离子束暴露于一个或多个脉冲来实现的，该激光或离子束将半导体的一部分熔化到期望的深度，从而导致 掺杂原子被掺入到熔融区域中。 在熔融区域重结晶之后，掺杂剂原子是电活性的。 通过等离子体增强化学气相沉积（PECVD）或其他已知的沉积技术沉积掺杂剂原子。

    Deposition of dopant impurities and pulsed energy drive-in
    2.
    再颁专利
    Deposition of dopant impurities and pulsed energy drive-in 有权
    掺杂杂质沉积和脉冲能量驱入

    公开(公告)号：USRE39988E1

    公开(公告)日：2008-01-01

    申请号：US10768656

    申请日：2001-06-29

    申请人： Paul Wickboldt ,  Paul G. Carey ,  Patrick M. Smith ,  Albert R. Ellingboe

    发明人： Paul Wickboldt ,  Paul G. Carey ,  Patrick M. Smith ,  Albert R. Ellingboe

    IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L21/22 ,  H01L21/38

    CPC分类号： H01L21/2254

    摘要： A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

    摘要翻译： 使用气体浸渍激光掺杂（GILD）技术增强可实现掺杂剂掺杂的半导体掺杂工艺。 增强的掺杂是通过首先在半导体表面上沉积掺杂剂原子的薄层，然后从激光或离子束暴露于一个或多个脉冲来实现的，该激光或离子束将半导体的一部分熔化到期望的深度，从而导致 掺杂原子被掺入到熔融区域中。 在熔融区域重结晶之后，掺杂剂原子是电活性的。 通过等离子体增强化学气相沉积（PECVD）或其他已知的沉积技术沉积掺杂剂原子。

    Thick adherent dielectric films on plastic substrates and method for depositing same
    3.
    发明授权
    Thick adherent dielectric films on plastic substrates and method for depositing same 失效
    塑料基底上的厚粘附介质膜及其沉积方法

    公开(公告)号：US06436739B1

    公开(公告)日：2002-08-20

    申请号：US09560058

    申请日：2000-04-27

    申请人： Paul Wickboldt ,  Albert R. Ellingboe ,  Steven D. Theiss ,  Patrick M. Smith

    发明人： Paul Wickboldt ,  Albert R. Ellingboe ,  Steven D. Theiss ,  Patrick M. Smith

    IPC分类号： H01L2184

    CPC分类号： C23C16/402 ,  C23C14/10 ,  C23C14/541 ,  C23C16/46

    摘要： Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 &mgr;m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 &mgr;m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.

    摘要翻译： 沉积在塑料基板上的厚粘附介质膜用作热障层以保护塑料基板免受高温的影响，例如在随后沉积在电介质膜上的层的激光退火期间发生。 优选的是，阻隔层具有以下特性：1μm以上的厚度，粘附在塑料基板上，在温度循环时不会剥离，在受到弯曲时具有很少或没有裂纹并且不会发生裂纹 当浸没在流体中时剥离，电绝缘并且优选是透明的。 厚的阻挡层可以由各种电介质和某些金属氧化物构成，并且可以通过各种已知的沉积技术沉积在各种塑料基板上。 在塑料基板上形成厚的阻挡层的方法的关键是在阻挡层的沉积过程中保持基板的冷却。 衬底的冷却可以通过使用其上定位有塑料衬底的冷却卡盘，并且通过引导诸如He，Ar和N2之类的冷却气体在塑料衬底和冷却卡盘之间来实现。 高达约5μm的厚粘附介质膜已经沉积在包括上述属性的塑料基板上，并且使得塑料基板能够承受施加到沉积在电介质膜上的材料的激光加工温度。

    Method and system for spatially selective crystallization of amorphous silicon
    7.
    发明授权
    Method and system for spatially selective crystallization of amorphous silicon 失效
    非晶硅空间选择性结晶的方法和系统

    公开(公告)号：US07964453B2

    公开(公告)日：2011-06-21

    申请号：US12453571

    申请日：2009-05-15

    申请人： Nicholas Doudoumopoulos ,  Paul Christensen ,  Paul Wickboldt

    发明人： Nicholas Doudoumopoulos ,  Paul Christensen ,  Paul Wickboldt

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/26 ,  H01L21/42 ,  H01L21/324

    CPC分类号： H01L21/02532 ,  B23K26/0622 ,  B23K26/0676 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285

    摘要： The manufacturing methodology to produce polycrystalline silicon in time and cost efficient manner uses a spatially selective crystallization approach to greatly reduce the amount of energy delivered to the work surface. The amorphous silicon film is subjected to laser radiation substantially exclusively at localized areas where TFTs are to be formed. The source of radiation is a copper vapor laser which produces a highly stable radiation in a visible spectrum with an energy sufficient to convert amorphous silicon into polysilicon in 1-3 shots. The optic system delivers the homogenized, conditioned and focused laser beam to the area of interest in a controlled manner. Single or multi-laser beam arrangements, as well as different shapes and sizes of laser beam spots are contemplated.

    摘要翻译： 以时间和成本有效的方式制造多晶硅的制造方法使用空间选择性结晶方法来大大减少输送到工作表面的能量的量。 非晶硅膜基本上仅在要形成TFT的局部区域进行激光辐射。 辐射源是铜蒸气激光器，其在可见光谱中产生高度稳定的辐射，其能量足以在1-3次照射中将非晶硅转化为多晶硅。 光学系统以受控的方式将均质化的，调理的和聚焦的激光束传递到感兴趣的区域。 预期单或多激光束布置以及不同形状和尺寸的激光束斑点。

    Method and system for spatially selective crystallization of amorphous silicon
    10.
    发明申请
    Method and system for spatially selective crystallization of amorphous silicon 失效
    非晶硅空间选择性结晶的方法和系统

    公开(公告)号：US20100291760A1

    公开(公告)日：2010-11-18

    申请号：US12453571

    申请日：2009-05-15

    申请人： Nicholas Doudoumopoulos ,  Paul Christensen ,  Paul Wickboldt

    发明人： Nicholas Doudoumopoulos ,  Paul Christensen ,  Paul Wickboldt

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02532 ,  B23K26/0622 ,  B23K26/0676 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285

    摘要： The manufacturing methodology to produce polycrystalline silicon in time and cost efficient manner uses a spatially selective crystallization approach to greatly reduce the amount of energy delivered to the work surface. The amorphous silicon film is subjected to laser radiation substantially exclusively at localized areas where TFTs are to be formed. The source of radiation is a copper vapor laser which produces a highly stable radiation in a visible spectrum with an energy sufficient to convert amorphous silicon into polysilicon in 1-3 shots. The optic system delivers the homogenized, conditioned and focused laser beam to the area of interest in a controlled manner. Single or multi-laser beam arrangements, as well as different shapes and sizes of laser beam spots are contemplated.

    摘要翻译： 以时间和成本有效的方式制造多晶硅的制造方法使用空间选择性结晶方法来大大减少输送到工作表面的能量的量。 非晶硅膜基本上仅在要形成TFT的局部区域进行激光辐射。 辐射源是铜蒸气激光器，其在可见光谱中产生高度稳定的辐射，其能量足以在1-3次照射中将非晶硅转化为多晶硅。 光学系统以受控的方式将均质化的，调理的和聚焦的激光束传递到感兴趣的区域。 预期单或多激光束布置以及不同形状和尺寸的激光束斑点。