Power supply rejection circuit for capacitively-stored reference voltages
    1.
    发明授权
    Power supply rejection circuit for capacitively-stored reference voltages 失效
    用于电容性存储的参考电压的电源抑制电路

    公开(公告)号:US06717789B2

    公开(公告)日:2004-04-06

    申请号:US10008899

    申请日:2001-12-05

    IPC分类号: H02H322

    CPC分类号: G01R17/10 G01D3/032 H02M1/12

    摘要: A power supply rejection circuit and method thereof for capacitively-stored reference voltages is disclosed. The power supply rejection circuit generally comprises a comparison circuit for comparing a signal associated with a power supply such as, for example, a Wheatstone bridge configuration, to a stored reference voltage, such that the comparison circuit includes at least one existing capacitor therein. At least one additional capacitor can be then coupled to the comparison circuit, such that the additional capacitor creates a capacitively-coupled voltage divider. This capacitively-coupled voltage divider negates the first order effects of power supply noise in the system. This effect significantly reduces the effect of power supply noise and improves signal jitter associated with the comparison circuit during a comparison of the signal to the stored reference voltage utilizing the comparison circuit.

    摘要翻译: 公开了一种用于电容存储的参考电压的电源抑制电路及其方法。 电源抑制电路通常包括比较电路,用于将与诸如惠斯通电桥配置的电源相关联的信号与存储的参考电压进行比较,使得比较电路在其中包括至少一个现有的电容器。 然后可以将至少一个附加电容器耦合到比较电路,使得附加电容器产生电容耦合分压器。 该电容耦合分压器消除了系统中电源噪声的一阶影响。 这种效应显着降低了电源噪声的影响,并且在利用比较电路比较信号与存储的参考电压之间,改善与比较电路相关联的信号抖动。

    Permalloy bridge with selectable wafer-anistropy using multiple layers
    2.
    发明授权
    Permalloy bridge with selectable wafer-anistropy using multiple layers 有权
    坡度合金桥梁,采用多层可选择的晶圆 - 熵

    公开(公告)号:US07279891B1

    公开(公告)日:2007-10-09

    申请号:US11453533

    申请日:2006-06-15

    IPC分类号: G01R33/02

    摘要: A magnetic sensing method and apparatus include a plurality of bridge circuits, wherein each bridge circuit or element within a bridge is formed on a separate permalloy layer comprising a plurality of permalloy bridge runners. The permalloy bridge runners can be selected such that each permalloy bridge runner possesses a selectable wafer anisotropy to a length of the permalloy bridge runner in order to form a magnetic sensor based on the bridge circuits, maximize the magnetic sensitivity of the magnetic sensor, maximize the matching between bridges and independently control the wafer anisotropy through the use of multiple bridge circuits configured on separate permalloy layers.

    摘要翻译: 磁感测方法和装置包括多个桥接电路,其中桥中的每个桥接电路或元件形成在包括多个坡莫合金桥接件的单独的坡莫合金层上。 坡莫合金桥接器可以被选择成使得每个坡莫合金桥接器具有对坡莫合金桥接浇道的长度可选择的晶片各向异性,以形成基于桥接电路的磁传感器,使磁传感器的磁敏度最大化, 桥之间的匹配,并且通过使用配置在单独的坡莫合金层上的多个桥接电路独立地控制晶片各向异性。

    Selective permalloy anisotropy
    3.
    发明授权
    Selective permalloy anisotropy 失效
    选择性坡莫合金各向异性

    公开(公告)号:US07772529B2

    公开(公告)日:2010-08-10

    申请号:US11077351

    申请日:2005-03-10

    申请人: Perry A. Holman

    发明人: Perry A. Holman

    IPC分类号: H05B6/02 H05B6/10

    摘要: Methods and systems for improving permalloy sensitivity. One or more permalloy sensing components can be configured upon a substrate, and one or more conductors are located above a portion of the permalloy sensing component of interest. A current can then be initiated through the conductor. The substrate can then be heated such that the current creates a magnetic field that modifies the anisotropy of the portion of the permalloy sensing component of interest, thereby providing selective anisotropy and improving permalloy sensitivity thereof.

    摘要翻译: 提高坡莫合金敏感性的方法和系统。 一个或多个坡莫合金感测部件可以配置在基板上,并且一个或多个导体位于感兴趣的坡莫合金感测部件的一部分上方。 然后可以通过导体启动电流。 然后可以加热衬底,使得电流产生磁场,其改变感兴趣的坡莫合金感测部件的部分的各向异性,从而提供选择性各向异性并改善其坡莫合金敏感性。

    Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy
    4.
    发明授权
    Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy 有权
    坡莫合金传感器具有各自的坡莫合金抗蚀剂图案流延器,其长度垂直于晶片级各向异性

    公开(公告)号:US07196875B2

    公开(公告)日:2007-03-27

    申请号:US10811473

    申请日:2004-03-24

    IPC分类号: G11B5/39 G11B5/33

    CPC分类号: H01L43/08

    摘要: A permalloy sensor having high sensitivity is presented A substrate and a sensor has a first surface having a wafer level anisotropy in a given direction. A permalloy resistor pattern of individual runners is deposited on the surface such that the mechanical length of each of said individual runners is perpendicular to the wafer level anisotropy to cause the sensor to have an anisotropy of about 90°. The permalloy is deposited as a thin film and a silicon wafer is the preferred substrate.

    摘要翻译: 具有高灵敏度的坡莫合金传感器呈现基板和传感器具有在给定方向上具有晶片级各向异性的第一表面。 单个流道的坡莫合金电阻器图案沉积在表面上,使得每个所述单个流道的机械长度垂直于晶片级各向异性,以使传感器具有大约90°的各向异性。 坡莫合金作为薄膜沉积,硅晶片是优选的基板。