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1.发明申请Dark Current Reduction in Back-Illuminated Imaging Sensors and Method of Fabricating Same 有权背照光成像传感器的暗电流降低及其制造方法公开(公告)号：US20070235829A1
公开(公告)日：2007-10-11
申请号：US11752601
申请日：2007-05-23
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14643 , H01L27/1464 , H01L27/148 , H01L31/18 , H01L31/1892 , Y02E10/50
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The device includes an insulator layer; a semiconductor substrate, having an interface with the insulator layer; an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer in proximity to a face of the epitaxial layer, the face being opposite the interface of the semiconductor substrate and the insulator layer, the imaging components comprising junctions within the epitaxial layer; wherein the semiconductor substrate and the epitaxial layer exhibit a net doping concentration having a maximum value at a predetermined distance from the interface of the insulating layer and the semiconductor substrate and which decreases monotonically on both sides of the profile from the maximum value within a portion of the semiconductor substrate and the epitaxial layer. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a “dead band” to prevent dark current carriers from penetrating to the front side of the device.
摘要翻译： 公开了一种用于在绝缘体上半导体衬底上制造背照式半导体成像器件的方法，以及所得成像器件。 该装置包括绝缘体层; 半导体衬底，与绝缘体层具有界面; 通过外延生长在半导体衬底上生长的外延层; 以及在所述外延层中靠近所述外延层的表面的一个或多个成像组件，所述表面与所述半导体衬底和所述绝缘体层的界面相对，所述成像组件包括所述外延层内的结; 其中所述半导体衬底和所述外延层表现出净绝缘浓度，所述净掺杂浓度在距所述绝缘层和所述半导体衬底的界面预定距离处具有最大值，并且所述净掺杂浓度在所述剖面的两侧上从所述最大值的单一部分 半导体衬底和外延层。 与绝缘层的界面和掺杂分布的峰值之间的掺杂分布用作“死区”，以防止暗电流载流子穿透到器件的前侧。
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公开(公告)号：US08946818B2
公开(公告)日：2015-02-03
申请号：US12760895
申请日：2010-04-15
IPC分类号： H01L27/12 , H01L27/146 , H01L27/148 , H01L31/18
CPC分类号： H01L27/14643 , H01L27/1464 , H01L27/148 , H01L31/18 , H01L31/1892 , Y02E10/50
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The device includes an insulator layer; a semiconductor substrate, having an interface with the insulator layer; an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer in proximity to a face of the epitaxial layer, the face being opposite the interface of the semiconductor substrate and the insulator layer, the imaging components comprising junctions within the epitaxial layer; wherein the semiconductor substrate and the epitaxial layer exhibit a net doping concentration having a maximum value at a predetermined distance from the interface of the insulating layer and the semiconductor substrate and which decreases monotonically on both sides of the profile from the maximum value within a portion of the semiconductor substrate and the epitaxial layer. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a “dead band” to prevent dark current carriers from penetrating to the front side of the device.
摘要翻译： 公开了一种用于在绝缘体上半导体衬底上制造背照式半导体成像器件的方法，以及所得成像器件。 该装置包括绝缘体层; 半导体衬底，与绝缘体层具有界面; 通过外延生长在半导体衬底上生长的外延层; 以及在所述外延层中靠近所述外延层的表面的一个或多个成像组件，所述表面与所述半导体衬底和所述绝缘体层的界面相对，所述成像组件包括所述外延层内的结; 其中所述半导体衬底和所述外延层表现出净绝缘浓度，所述净掺杂浓度在距所述绝缘层和所述半导体衬底的界面预定距离处具有最大值，并且所述净掺杂浓度在所述剖面的两侧上从所述最大值的单一部分 半导体衬底和外延层。 与绝缘层的界面和掺杂分布的峰值之间的掺杂分布用作“死区”，以防止暗电流载流子穿透到器件的前侧。
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公开(公告)号：US08652937B2
公开(公告)日：2014-02-18
申请号：US13418841
申请日：2012-03-13
IPC分类号： H01L21/74 , H01L21/205 , H01L21/22
CPC分类号： H01L27/14643 , H01L27/1464 , H01L27/148 , H01L31/18 , H01L31/1892 , Y02E10/50
摘要： A back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate is disclosed. The device includes an insulator layer, a semiconductor substrate having an interface with the insulator layer, an epitaxial layer grown on the semiconductor substrate; and one or more imaging components in the epitaxial layer. The semiconductor substrate and the epitaxial layer exhibit a net doping concentration profile having a maximum value at a predetermined distance from the interface which decreases monotonically on both sides of the profile. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a “dead band” to prevent dark current carriers from penetrating to the front side of the device.
摘要翻译： 公开了一种在绝缘体上半导体衬底上的背照式半导体成像器件。 该器件包括绝缘体层，与绝缘体层具有界面的半导体衬底，在半导体衬底上生长的外延层; 和外延层中的一个或多个成像组件。 半导体衬底和外延层表现出净掺杂浓度分布，其具有在与轮廓两侧单调减小的界面的预定距离处的最大值。 与绝缘层的界面和掺杂分布的峰值之间的掺杂分布用作“死区”，以防止暗电流载流子穿透到器件的前侧。
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公开(公告)号：US07238583B2
公开(公告)日：2007-07-03
申请号：US11350546
申请日：2006-02-09
IPC分类号： H01L27/12
CPC分类号： H01L31/18 , H01L27/1464 , H01L27/14643 , H01L27/148 , H01L31/1892 , Y02E10/50
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a thin semiconductor-on-insulator substrate, and resulting imaging device. Resulting device has a monotonically varying doping profile which provides a desired electric field and eliminates a dead band proximate to the backside surface.
摘要翻译： 一种用于在绝缘体上半导体衬底上制造背照式半导体成像器件的方法，以及所得到的成像器件。 所得到的器件具有单调变化的掺杂分布，其提供期望的电场并且消除靠近背面的死区。
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公开(公告)号：US20100200944A1
公开(公告)日：2010-08-12
申请号：US12760895
申请日：2010-04-15
IPC分类号： H01L29/36 , H01L31/0232
CPC分类号： H01L27/14643 , H01L27/1464 , H01L27/148 , H01L31/18 , H01L31/1892 , Y02E10/50
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The device includes an insulator layer; a semiconductor substrate, having an interface with the insulator layer; an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer in proximity to a face of the epitaxial layer, the face being opposite the interface of the semiconductor substrate and the insulator layer, the imaging components comprising junctions within the epitaxial layer; wherein the semiconductor substrate and the epitaxial layer exhibit a net doping concentration having a maximum value at a predetermined distance from the interface of the insulating layer and the semiconductor substrate and which decreases monotonically on both sides of the profile from the maximum value within a portion of the semiconductor substrate and the epitaxial layer. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a “dead band” to prevent dark current carriers from penetrating to the front side of the device.
摘要翻译： 公开了一种用于在绝缘体上半导体衬底上制造背照式半导体成像器件的方法，以及所得成像器件。 该装置包括绝缘体层; 半导体衬底，与绝缘体层具有界面; 通过外延生长在半导体衬底上生长的外延层; 以及在所述外延层中靠近所述外延层的表面的一个或多个成像组件，所述表面与所述半导体衬底和所述绝缘体层的界面相对，所述成像组件包括所述外延层内的结; 其中所述半导体衬底和所述外延层表现出净绝缘浓度，所述净掺杂浓度在距所述绝缘层和所述半导体衬底的界面预定距离处具有最大值，并且所述净掺杂浓度在所述剖面的两侧上从所述最大值的单一部分 半导体衬底和外延层。 与绝缘层的界面和掺杂分布的峰值之间的掺杂分布用作“死区”，以防止暗电流载流子穿透到器件的前侧。
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6.发明授权Dark current reduction in back-illuminated imaging sensors and method of fabricating same 有权背照式成像传感器的暗电流减少及其制造方法公开(公告)号：US07723215B2
公开(公告)日：2010-05-25
申请号：US11752601
申请日：2007-05-23
IPC分类号： H01L21/20
CPC分类号： H01L27/14643 , H01L27/1464 , H01L27/148 , H01L31/18 , H01L31/1892 , Y02E10/50
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The device includes an insulator layer; a semiconductor substrate, having an interface with the insulator layer; an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer in proximity to a face of the epitaxial layer, the face being opposite the interface of the semiconductor substrate and the insulator layer, the imaging components comprising junctions within the epitaxial layer; wherein the semiconductor substrate and the epitaxial layer exhibit a net doping concentration having a maximum value at a predetermined distance from the interface of the insulating layer and the semiconductor substrate and which decreases monotonically on both sides of the profile from the maximum value within a portion of the semiconductor substrate and the epitaxial layer. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a “dead band” to prevent dark current carriers from penetrating to the front side of the device.
摘要翻译： 公开了一种用于在绝缘体上半导体衬底上制造背照式半导体成像器件的方法，以及所得成像器件。 该装置包括绝缘体层; 半导体衬底，与绝缘体层具有界面; 通过外延生长在半导体衬底上生长的外延层; 以及在所述外延层中靠近所述外延层的表面的一个或多个成像组件，所述表面与所述半导体衬底和所述绝缘体层的界面相对，所述成像组件包括所述外延层内的结; 其中所述半导体衬底和所述外延层表现出净绝缘浓度，所述净掺杂浓度在距所述绝缘层和所述半导体衬底的界面预定距离处具有最大值，并且所述净掺杂浓度在所述剖面的两侧上从所述最大值的单一部分 半导体衬底和外延层。 与绝缘层的界面和掺杂分布的峰值之间的掺杂分布用作“死区”，以防止暗电流载流子穿透到器件的前侧。
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公开(公告)号：US20060186560A1
公开(公告)日：2006-08-24
申请号：US11350546
申请日：2006-02-09
CPC分类号： H01L31/18 , H01L27/1464 , H01L27/14643 , H01L27/148 , H01L31/1892 , Y02E10/50
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a thin semiconductor-on-insulator substrate, and resulting imaging device. Resulting device has a monotonically varying doping profile which provides a desired electric field and eliminates a dead band proximate to the backside surface.
摘要翻译： 一种用于在绝缘体上半导体衬底上制造背照式半导体成像器件的方法，以及所得到的成像器件。 所得到的器件具有单调变化的掺杂分布，其提供期望的电场并且消除靠近背面的死区。
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公开(公告)号：US20120190150A1
公开(公告)日：2012-07-26
申请号：US13418841
申请日：2012-03-13
IPC分类号： H01L31/18
CPC分类号： H01L27/14643 , H01L27/1464 , H01L27/148 , H01L31/18 , H01L31/1892 , Y02E10/50
摘要： A back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate is disclosed. The device includes an insulator layer, a semiconductor substrate having an interface with the insulator layer, an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer. The semiconductor substrate and the epitaxial layer exhibit a net doping concentration profile having a maximum value at a predetermined distance from the interface which decreases monotonically on both sides of the profile. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a “dead band” to prevent dark current carriers from penetrating to the front side of the device.
摘要翻译： 公开了一种在绝缘体上半导体衬底上的背照式半导体成像器件。 该器件包括绝缘体层，具有与绝缘体层的界面的半导体衬底，通过外延生长在半导体衬底上生长的外延层; 和外延层中的一个或多个成像组件。 半导体衬底和外延层表现出净掺杂浓度分布，其具有在与轮廓两侧单调减小的界面的预定距离处的最大值。 与绝缘层的界面和掺杂分布的峰值之间的掺杂分布用作“死区”，以防止暗电流载流子穿透到器件的前侧。
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9.发明申请METHOD OF FABRICATING BACK-ILLUMINATED IMAGING SENSORS USING A BUMP BONDING TECHNIQUE 有权使用BUMP BONDING技术制造背照式成像传感器的方法公开(公告)号：US20090256227A1
公开(公告)日：2009-10-15
申请号：US12431150
申请日：2009-04-28
IPC分类号： H01L31/0232
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14627 , H01L27/1464 , H01L27/14683 , H01L2224/0401 , H01L2224/0557 , H01L2224/13023 , H01L2224/13109 , H01L2924/0002 , H01L2924/1305 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.
摘要翻译： 公开了一种用于在绝缘体上半导体衬底上制造背照式半导体成像器件的方法，以及所得成像器件。 用于制造成像装置的方法包括以下步骤：提供包括绝缘体层的基板和基本上覆盖绝缘体层的外延层; 制造至少部分地覆盖并延伸到所述外延层中的至少一个成像部件; 形成基本上覆盖所述外延层的多个接合焊盘; 制造基本上覆盖所述外延层和所述至少一个成像部件的电介质层; 提供处理晶片; 在所述手柄晶片中形成多个导电沟槽; 在所述处理晶片的位于所述导电沟槽下面的第一表面上形成多个导电凸块; 以及将所述多个导电凸块接合到所述多个接合焊盘。
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10.发明授权Method of fabricating back-illuminated imaging sensors using a bump bonding technique 有权使用凸块接合技术制造背照式成像传感器的方法公开(公告)号：US07541256B2
公开(公告)日：2009-06-02
申请号：US11779414
申请日：2007-07-18
IPC分类号： H01L21/76
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14627 , H01L27/1464 , H01L27/14683 , H01L2224/0401 , H01L2224/0557 , H01L2224/13023 , H01L2224/13109 , H01L2924/0002 , H01L2924/1305 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.
摘要翻译： 公开了一种用于在绝缘体上半导体衬底上制造背照式半导体成像器件的方法，以及所得成像器件。 用于制造成像装置的方法包括以下步骤：提供包括绝缘体层的基板和基本上覆盖绝缘体层的外延层; 制造至少部分地覆盖并延伸到所述外延层中的至少一个成像部件; 形成基本上覆盖所述外延层的多个接合焊盘; 制造基本上覆盖所述外延层和所述至少一个成像部件的电介质层; 提供处理晶片; 在所述手柄晶片中形成多个导电沟槽; 在所述处理晶片的位于所述导电沟槽下面的第一表面上形成多个导电凸块; 以及将所述多个导电凸块接合到所述多个接合焊盘。
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