利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

45 条记录 (耗时 0.018 秒)

    Schottky diode
    1.
    发明授权
    Schottky diode 有权
    肖特基二极管

    公开(公告)号：US08334579B2

    公开(公告)日：2012-12-18

    申请号：US12899904

    申请日：2010-10-07

    申请人： Ping Chun Yeh ,  Der-Chyang Yeh ,  Chih-Ping Chao

    发明人： Ping Chun Yeh ,  Der-Chyang Yeh ,  Chih-Ping Chao

    IPC分类号： H01L29/872

    CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1095 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/66212

    摘要： An integrated circuit device and method for fabricating the integrated circuit device is disclosed. The integrated circuit device includes a substrate, a diffusion source, and a lightly doped diffusion region in contact with a conductive layer. A junction of the lightly doped diffusion region with the conductive layer forms a Schottky region. An annealing process is performed to form the lightly doped diffusion region. The annealing process causes dopants from the diffusion source (for example, an n-well disposed in the substrate) of the integrated circuit device to diffuse into a region of the substrate, thereby forming the lightly doped diffusion region.

    摘要翻译： 公开了一种用于制造集成电路器件的集成电路器件和方法。 集成电路器件包括衬底，扩散源和与导电层接触的轻掺杂扩散区域。 轻掺杂扩散区与导电层的结形成肖特基区。 进行退火处理以形成轻掺杂扩散区域。 退火处理使得集成电路器件的扩散源（例如，设置在衬底中的n阱）的掺杂剂扩散到衬底的区域中，从而形成轻掺杂扩散区域。

    SCHOTTKY DIODE
    2.
    发明申请
    SCHOTTKY DIODE 有权
    肖特基二极管

    公开(公告)号：US20120086099A1

    公开(公告)日：2012-04-12

    申请号：US12899904

    申请日：2010-10-07

    申请人： Ping Chun Yeh ,  Der-Chyang Yeh ,  Chih-Ping Chao

    发明人： Ping Chun Yeh ,  Der-Chyang Yeh ,  Chih-Ping Chao

    IPC分类号： H01L29/872 ,  H01L21/04

    CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1095 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/66212

    摘要： An integrated circuit device and method for fabricating the integrated circuit device is disclosed. The integrated circuit device includes a substrate, a diffusion source, and a lightly doped diffusion region in contact with a conductive layer. A junction of the lightly doped diffusion region with the conductive layer forms a Schottky region. An annealing process is performed to form the lightly doped diffusion region. The annealing process causes dopants from the diffusion source (for example, an n-well disposed in the substrate) of the integrated circuit device to diffuse into a region of the substrate, thereby forming the lightly doped diffusion region.

    摘要翻译： 公开了一种用于制造集成电路器件的集成电路器件和方法。 集成电路器件包括衬底，扩散源和与导电层接触的轻掺杂扩散区域。 轻掺杂扩散区与导电层的结形成肖特基区。 进行退火处理以形成轻掺杂扩散区域。 退火处理使得集成电路器件的扩散源（例如，设置在衬底中的n阱）的掺杂剂扩散到衬底的区域中，从而形成轻掺杂扩散区域。

    Forming bipolar transistor through fast EPI-growth on polysilicon
    6.
    发明授权
    Forming bipolar transistor through fast EPI-growth on polysilicon 有权
    通过在多晶硅上快速EPI生长形成双极晶体管

    公开(公告)号：US08581347B2

    公开(公告)日：2013-11-12

    申请号：US12841275

    申请日：2010-07-22

    申请人： Der-Chyang Yeh ,  Li-Weng Chang ,  Hua-Chou Tseng ,  Chih-Ping Chao

    发明人： Der-Chyang Yeh ,  Li-Weng Chang ,  Hua-Chou Tseng ,  Chih-Ping Chao

    IPC分类号： H01L29/66

    CPC分类号： H01L21/8249 ,  H01L21/8228 ,  H01L27/0623 ,  H01L27/0826

    摘要： Provided is a semiconductor device that includes a first transistor and a second transistor that are formed on the same substrate. The first transistor includes a first collector, a first base, and a first emitter. The first collector includes a first doped well disposed in the substrate. The first base includes a first doped layer disposed above the substrate and over the first doped well. The first emitter includes a doped element disposed over a portion of the first doped layer. The second transistor includes a second collector, a second base, and a second emitter. The second collector includes a doped portion of the substrate. The second base includes a second doped well disposed in the substrate and over the doped portion of the substrate. The second emitter includes a second doped layer disposed above the substrate and over the second doped well.

    摘要翻译： 提供了一种半导体器件，其包括形成在同一衬底上的第一晶体管和第二晶体管。 第一晶体管包括第一集电极，第一基极和第一发射极。 第一集电器包括设置在衬底中的第一掺杂阱。 第一基底包括设置在衬底上方和第一掺杂阱上方的第一掺杂层。 第一发射器包括设置在第一掺杂层的一部分上的掺杂元件。 第二晶体管包括第二集电极，第二基极和第二发射极。 第二集电体包括衬底的掺杂部分。 第二基底包括设置在衬底中并在衬底的掺杂部分上方的第二掺杂阱。 第二发射器包括设置在衬底上方和第二掺杂阱上方的第二掺杂层。

    FORMING BIPOLAR TRANSISTOR THROUGH FAST EPI-GROWTH ON POLYSILICON
    7.
    发明申请
    FORMING BIPOLAR TRANSISTOR THROUGH FAST EPI-GROWTH ON POLYSILICON 有权
    形成双极晶体管通过快速增长在多晶硅上

    公开(公告)号：US20120018811A1

    公开(公告)日：2012-01-26

    申请号：US12841275

    申请日：2010-07-22

    申请人： Der-Chyang Yeh ,  Li-Weng Chang ,  Hua-Chou Tseng ,  Chih-Ping Chao

    发明人： Der-Chyang Yeh ,  Li-Weng Chang ,  Hua-Chou Tseng ,  Chih-Ping Chao

    IPC分类号： H01L27/06 ,  H01L21/8249

    CPC分类号： H01L21/8249 ,  H01L21/8228 ,  H01L27/0623 ,  H01L27/0826

    摘要： Provided is a semiconductor device that includes a first transistor and a second transistor that are formed on the same substrate. The first transistor includes a first collector, a first base, and a first emitter. The first collector includes a first doped well disposed in the substrate. The first base includes a first doped layer disposed above the substrate and over the first doped well. The first emitter includes a doped element disposed over a portion of the first doped layer. The second transistor includes a second collector, a second base, and a second emitter. The second collector includes a doped portion of the substrate. The second base includes a second doped well disposed in the substrate and over the doped portion of the substrate. The second emitter includes a second doped layer disposed above the substrate and over the second doped well.

    摘要翻译： 提供了一种半导体器件，其包括形成在同一衬底上的第一晶体管和第二晶体管。 第一晶体管包括第一集电极，第一基极和第一发射极。 第一集电器包括设置在衬底中的第一掺杂阱。 第一基底包括设置在衬底上方和第一掺杂阱上方的第一掺杂层。 第一发射器包括设置在第一掺杂层的一部分上的掺杂元件。 第二晶体管包括第二集电极，第二基极和第二发射极。 第二集电体包括衬底的掺杂部分。 第二基底包括设置在衬底中并在衬底的掺杂部分上方的第二掺杂阱。 第二发射器包括设置在衬底上方和第二掺杂阱上方的第二掺杂层。