公开(公告)号：US20060275963A1

公开(公告)日：2006-12-07

申请号：US11144204

申请日：2005-06-02

申请人： Ping Mei ,  Albert Jeans ,  Carl Taussig

发明人： Ping Mei ,  Albert Jeans ,  Carl Taussig

IPC分类号： H01L21/84 ,  H01L27/148

CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869 ,  Y10S438/942

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

摘要翻译： 本发明提供一种制造薄膜器件的薄膜器件和相关方法。 例如，在栅电极中具有纳米间隙的薄膜晶体管。 该方法包括提供基底。 然后在衬底上设置多个平行隔开的导电条。 然后将多个薄膜器件层沉积在导电条上。 3D结构设置在多个薄膜器件层上，该结构具有多个不同的高度。 然后蚀刻3D结构和多个薄膜器件层以限定薄膜器件，例如设置在至少一部分导电条上的薄膜晶体管。

公开(公告)号：US20080185591A1

公开(公告)日：2008-08-07

申请号：US12011440

申请日：2008-01-24

申请人： Ping Mei ,  Albert Jeans ,  Carl Taussig

发明人： Ping Mei ,  Albert Jeans ,  Carl Taussig

IPC分类号： H01L29/04

CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869 ,  Y10S438/942

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

公开(公告)号：US20070040491A1

公开(公告)日：2007-02-22

申请号：US11589580

申请日：2006-10-30

申请人： Ping Mei ,  Craig Perlov ,  Albert Jeans ,  Carl Taussig

发明人： Ping Mei ,  Craig Perlov ,  Albert Jeans ,  Carl Taussig

IPC分类号： H01J1/62

CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869

摘要： Thin film devices and methods for forming the same are disclosed herein. A method for forming a thin film device includes forming a first at least semi-conductive strip located at a first height relative to a surface of a substrate, and forming a second at least semi-conductive strip adjacent to the first at least semi-conductive strip. The second strip is located at a second height relative to the substrate surface, and the second height is different than the first height. A nano-gap is formed between the first and second at least semi-conductive strips.

摘要翻译： 本文公开了薄膜器件及其形成方法。 一种用于形成薄膜器件的方法包括形成位于相对于衬底表面的第一高度处的第一至少半导电条，以及形成与第一至少半导体相邻的第二至少半导电条 跳闸。 第二条带相对于基板表面位于第二高度，第二高度不同于第一高度。 在第一和第二至少半导电条之间形成纳米间隙。

公开(公告)号：US08269221B2

公开(公告)日：2012-09-18

申请号：US12011440

申请日：2008-01-24

申请人： Ping Mei ,  Albert Jeans ,  Carl Taussig

发明人： Ping Mei ,  Albert Jeans ,  Carl Taussig

IPC分类号： H01L29/786

CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869 ,  Y10S438/942

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

摘要翻译： 本发明提供一种制造薄膜器件的薄膜器件和相关方法。 例如，在栅电极中具有纳米间隙的薄膜晶体管。 该方法包括提供基底。 然后在衬底上设置多个平行隔开的导电条。 然后将多个薄膜器件层沉积在导电条上。 3D结构设置在多个薄膜器件层上，该结构具有多个不同的高度。 然后蚀刻3D结构和多个薄膜器件层以限定薄膜器件，例如设置在至少一部分导电条上的薄膜晶体管。

公开(公告)号：US07341893B2

公开(公告)日：2008-03-11

申请号：US11144204

申请日：2005-06-02

申请人： Ping Mei ,  Albert Jeans ,  Carl Taussig

发明人： Ping Mei ,  Albert Jeans ,  Carl Taussig

IPC分类号： H01L21/00

CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869 ,  Y10S438/942

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

摘要翻译： 本发明提供一种制造薄膜器件的薄膜器件和相关方法。 例如，在栅电极中具有纳米间隙的薄膜晶体管。 该方法包括提供基底。 然后在衬底上设置多个平行隔开的导电条。 然后将多个薄膜器件层沉积在导电条上。 3D结构设置在多个薄膜器件层上，该结构具有多个不同的高度。 然后蚀刻3D结构和多个薄膜器件层以限定薄膜器件，例如设置在至少一部分导电条上的薄膜晶体管。

公开(公告)号：US20050176182A1

公开(公告)日：2005-08-11

申请号：US10777005

申请日：2004-02-10

申请人： Ping Me ,  Warren Jackson ,  Carl Taussig ,  Albert Jeans

发明人： Ping Me ,  Warren Jackson ,  Carl Taussig ,  Albert Jeans

IPC分类号： G03F7/20 ,  C23C16/00 ,  H01L21/00 ,  H01L21/027 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L51/00

CPC分类号： H01L29/78603 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/66757 ,  H01L51/0097

摘要： An aspect of the present invention is a method for forming a plurality of thin-film devices. The method includes providing a flexible substrate and utilizing a self-aligned imprint lithography (SAIL) process to form the plurality of thin-film devices on the flexible substrate.

摘要翻译： 本发明的一个方面是形成多个薄膜器件的方法。 该方法包括提供柔性基板并利用自对准压印光刻（SAIL）工艺在柔性基板上形成多个薄膜器件。

公开(公告)号：US20070096169A1

公开(公告)日：2007-05-03

申请号：US11264321

申请日：2005-11-01

申请人： Ping Mei ,  Hao Luo ,  Carl Taussig

发明人： Ping Mei ,  Hao Luo ,  Carl Taussig

IPC分类号： H01L29/80

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, fabrication of an inverter thin film device is described. Moreover, a parallel spaced electrically conductive strips are provided upon a substrate. A functional material is deposited upon the conductive strips. A 3D structure is then provided upon the functional material, the 3D structure having a plurality of different heights, at least one height defining a first portion of the conductive strips to be bundled. The 3D structure and functional material are then etched to define a TFD disposed above the first portion of the conductive strips. The first portion of the conductive strips is bundled adjacent to the TFD.

摘要翻译： 本发明提供一种制造薄膜器件的薄膜器件和相关方法。 例如，描述了逆变器薄膜器件的制造。 此外，在基板上设置平行隔开的导电条。 功能材料沉积在导电条上。 然后在功能材料上提供3D结构，3D结构具有多个不同的高度，限定要捆扎的导电条的第一部分的至少一个高度。 然后蚀刻3D结构和功能材料以限定设置在导电条的第一部分之上的TFD。 导电条的第一部分与TFD相邻捆扎。

公开(公告)号：US08318610B2

公开(公告)日：2012-11-27

申请号：US13172543

申请日：2011-06-29

申请人： Ping Mei ,  Hao Luo ,  Carl Taussig

发明人： Ping Mei ,  Hao Luo ,  Carl Taussig

IPC分类号： H01L21/31

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, fabrication of an inverter thin film device is described. Moreover, a parallel spaced electrically conductive strips are provided upon a substrate. A functional material is deposited upon the conductive strips. A 3D structure is then provided upon the functional material, the 3D structure having a plurality of different heights, at least one height defining a first portion of the conductive strips to be bundled. The 3D structure and functional material are then etched to define a TFD disposed above the first portion of the conductive strips. The first portion of the conductive strips is bundled adjacent to the TFD.

摘要翻译： 本发明提供一种制造薄膜器件的薄膜器件和相关方法。 例如，描述了逆变器薄膜器件的制造。 此外，在基板上设置平行隔开的导电条。 功能材料沉积在导电条上。 然后在功能材料上提供3D结构，3D结构具有多个不同的高度，限定要捆扎的导电条的第一部分的至少一个高度。 然后蚀刻3D结构和功能材料以限定设置在导电条的第一部分之上的TFD。 导电条的第一部分与TFD相邻捆扎。

公开(公告)号：US08097400B2

公开(公告)日：2012-01-17

申请号：US11062384

申请日：2005-02-22

申请人： Warren Jackson ,  Carl Taussig ,  Ping Mei

发明人： Warren Jackson ,  Carl Taussig ,  Ping Mei

IPC分类号： G03F7/20

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： Provided is a low cost system and method for forming electronic devices, especially large surface area devices. The process of imprint lithography is combined with alternate manufacturing techniques to fabricate the devices. Initially, a template imprints a three-dimensional pattern into a resist layer deposited on a flexible substrate. The resist layer is cured using ultraviolet light or other curing techniques. After curing, the 3-D pattern is modified using one of several techniques to include inkjetting, electrodeposition or laser patterning. In one embodiment, a semi-fluid material may be jetted into channels formed in the pattern, thereby forming conductive or insulating lead lines. Alternatively, a two-dimensional pattern may be jetted onto the resist layer. Final processing may include multiple etch-mask-etch steps. The integration of techniques into a single system provides a low cost, efficient method for manufacturing high quality, large surface area electronic devices.

摘要翻译： 提供一种用于形成电子装置，特别是大型表面积装置的低成本系统和方法。 压印光刻的过程与替代制造技术相结合以制造器件。 最初，模板将三维图案印刷到沉积在柔性基板上的抗蚀剂层中。 使用紫外线或其他固化技术固化抗蚀剂层。 固化后，使用几种技术之一来修改3-D图案，以包括喷墨，电沉积或激光图案化。 在一个实施例中，可以将半流体材料喷射到在图案中形成的通道中，从而形成导电或绝缘导线。 或者，可以将二维图案喷射到抗蚀剂层上。 最终处理可以包括多个蚀刻掩模蚀刻步骤。 将技术整合到单个系统中提供了用于制造高质量，大表面积电子器件的低成本，有效的方法。

公开(公告)号：US20110256725A1

公开(公告)日：2011-10-20

申请号：US13172543

申请日：2011-06-29

申请人： Ping Mei ,  Hao Luo ,  Carl Taussig

发明人： Ping Mei ,  Hao Luo ,  Carl Taussig

IPC分类号： H01L21/311

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, fabrication of an inverter thin film device is described. Moreover, a parallel spaced electrically conductive strips are provided upon a substrate. A functional material is deposited upon the conductive strips. A 3D structure is then provided upon the functional material, the 3D structure having a plurality of different heights, at least one height defining a first portion of the conductive strips to be bundled. The 3D structure and functional material are then etched to define a TFD disposed above the first portion of the conductive strips. The first portion of the conductive strips is bundled adjacent to the TFD.

摘要翻译： 本发明提供一种制造薄膜器件的薄膜器件和相关方法。 例如，描述了逆变器薄膜器件的制造。 此外，在基板上设置平行隔开的导电条。 功能材料沉积在导电条上。 然后在功能材料上提供3D结构，3D结构具有多个不同的高度，限定要捆扎的导电条的第一部分的至少一个高度。 然后蚀刻3D结构和功能材料以限定设置在导电条的第一部分之上的TFD。 导电条的第一部分与TFD相邻捆扎。