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11 条记录 (耗时 0.018 秒)

    Formation of devices on a substrate
    1.
    发明申请
    Formation of devices on a substrate 有权
    在基板上形成器件

    公开(公告)号：US20070117278A1

    公开(公告)日：2007-05-24

    申请号：US11285879

    申请日：2005-11-23

    申请人： Craig Perlov ,  Ping Mei

    发明人： Craig Perlov ,  Ping Mei

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： A method of forming a thin film device on a flexible substrate is disclosed. The method includes depositing an imprintable material over the flexible substrate. The imprintable are stamped material forming a three-dimensional pattern in the imprintable material. A sacrificial layer is formed over the three-dimensional pattern. A conductive layer is deposited over the sacrificial layer. The sacrificial layer is removed, leaving portions of the conductive layer as defined by the three-dimensional pattern.

    摘要翻译： 公开了一种在柔性基板上形成薄膜器件的方法。 该方法包括将可压印材料沉积在柔性基底上。 可压印的是在可压印材料中形成三维图案的冲压材料。 在三维图案上形成牺牲层。 在牺牲层上沉积导电层。 去除牺牲层，使得由三维图案限定的部分导电层。

    Thin film devices and methods for forming the same
    4.
    发明申请
    Thin film devices and methods for forming the same 有权
    薄膜器件及其形成方法

    公开(公告)号：US20070040491A1

    公开(公告)日：2007-02-22

    申请号：US11589580

    申请日：2006-10-30

    申请人： Ping Mei ,  Craig Perlov ,  Albert Jeans ,  Carl Taussig

    发明人： Ping Mei ,  Craig Perlov ,  Albert Jeans ,  Carl Taussig

    IPC分类号： H01J1/62

    CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869

    摘要： Thin film devices and methods for forming the same are disclosed herein. A method for forming a thin film device includes forming a first at least semi-conductive strip located at a first height relative to a surface of a substrate, and forming a second at least semi-conductive strip adjacent to the first at least semi-conductive strip. The second strip is located at a second height relative to the substrate surface, and the second height is different than the first height. A nano-gap is formed between the first and second at least semi-conductive strips.

    摘要翻译： 本文公开了薄膜器件及其形成方法。 一种用于形成薄膜器件的方法包括形成位于相对于衬底表面的第一高度处的第一至少半导电条，以及形成与第一至少半导体相邻的第二至少半导电条 跳闸。 第二条带相对于基板表面位于第二高度，第二高度不同于第一高度。 在第一和第二至少半导电条之间形成纳米间隙。

    Silver island anti-fuse
    5.
    发明申请
    Silver island anti-fuse 审中-公开
    银岛反熔丝

    公开(公告)号：US20060028895A1

    公开(公告)日：2006-02-09

    申请号：US10914255

    申请日：2004-08-09

    申请人： Carl Taussig ,  Warren Jackson ,  Craig Perlov ,  Frank Jeffrey

    发明人： Carl Taussig ,  Warren Jackson ,  Craig Perlov ,  Frank Jeffrey

    IPC分类号： G11C17/18 ,  G11C11/36

    CPC分类号： H01L23/5252 ,  G11C13/02 ,  G11C17/16 ,  G11C17/18 ,  G11C2213/72 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： An silver island anti-fuse including a first electrical conductor, an electrically resistive material in contact with the first conductor and at least one silver island disposed opposite the first electrical conductor and upon the electrically resistive material. A second electrical conductor disposed over the silver island intimately couples the silver island to the electrically resistive material. When a critical potential is applied across the anti-fuse, a metallic filament precipitates from the silver island through the electrically resistive material layer, establishing a short and thus switching the silver island anti-fuse from a high resistance to a low resistance. A method of making the silver island anti-fuse and a memory device incorporating the silver island anti-fuse are further provided.

    摘要翻译： 一种银岛反熔丝，包括第一电导体，与第一导体接触的电阻材料和与第一电导体相对设置的至少一个银岛和电阻材料。 布置在银岛上的第二电导体将银岛紧密地耦合到电阻材料上。 当跨抗反熔丝施加临界电位时，金属细丝通过电阻材料层从银岛沉淀出来，建立短路，从而将银岛抗熔丝从高电阻切换到低电阻。 还提供了制造银岛反熔丝的方法和结合有银岛反熔丝的存储装置。

    Polymer-based memory element
    7.
    发明申请
    Polymer-based memory element 审中-公开
    基于聚合物的记忆元件

    公开(公告)号：US20050006640A1

    公开(公告)日：2005-01-13

    申请号：US10608791

    申请日：2003-06-26

    申请人： Warren Jackson ,  Sean Zhang ,  Craig Perlov

    发明人： Warren Jackson ,  Sean Zhang ,  Craig Perlov

    IPC分类号： G11C13/02 ,  H01L27/28 ,  H01L51/00 ,  H01L51/30 ,  H01L47/00

    CPC分类号： G11C13/0016 ,  B82Y10/00 ,  G11C13/0014 ,  H01L27/28 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0041

    摘要： Fuse-type and antifuse-type semiconducting-organic-polymer-film-based memory elements for use in memory devices are disclosed. Various embodiments of the present invention employ a number of different techniques to alter the electrical conductance or, equivalently, the resistance, of organic-polymer-film memory elements in order to produce detectable memory-state changes in the memory elements. The techniques involve altering the electronic properties of the organic polymers by application of heat or electric fields, often in combination with additional chemical compounds, to either increase or decrease the resistance of the organic polymers.

    摘要翻译： 公开了用于存储器件的保险丝型和反熔丝型半导体 - 有机聚合物膜基存储元件。 本发明的各种实施例使用多种不同的技术来改变有机 - 聚合物膜存储元件的电导率或等效的电阻，以便产生存储元件中的可检测的存储状态变化。 这些技术涉及通过施加热或电场（通常与其它化合物组合）来改变有机聚合物的电子性质来提高或降低有机聚合物的电阻。

    Flexible hybrid memory element
    8.
    发明授权
    Flexible hybrid memory element 失效
    灵活的混合存储元件

    公开(公告)号：US06683322B2

    公开(公告)日：2004-01-27

    申请号：US10086606

    申请日：2002-03-01

    申请人： Warren B. Jackson ,  Carl Philip Taussig ,  Craig Perlov

    发明人： Warren B. Jackson ,  Carl Philip Taussig ,  Craig Perlov

    IPC分类号： H01L3524

    CPC分类号： G11C17/16 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention includes a memory cell apparatus, and a method of forming the memory cell. The memory cell apparatus includes a flexible hybrid memory element. The flexible hybrid memory element includes a flexible first conductive layer formed adjacent to a flexible substrate. A flexible diode structure is formed adjacent to the flexible first conductor. A flexible switch is formed adjacent to the flexible diode structure. A flexible second conductive layer is formed adjacent to the flexible switch. The flexible switch is generally formed from an organic material. The flexible diode structure is generally formed from a disordered, inorganic material. The flexible switch can be formed to create a high resistance path when a threshold amount of current is passed through the flexible switch, or the flexible switch can be formed to create a low resistance path when a threshold amount of current is passed through the flexible switch. The method includes depositing a flexible first conductive layer on a flexible substrate. A flexible disordered inorganic material is deposited on the flexible first conductor forming a plurality of flexible diode structures. A flexible organic material is deposited on the flexible disordered inorganic material, forming a plurality of flexible switches adjacent to the plurality of flexible diode structures. A flexible second conductor is deposited on the flexible organic material.

    摘要翻译： 本发明包括存储单元装置和形成该存储单元的方法。 存储单元装置包括一个灵活的混合存储元件。 柔性混合存储元件包括邻近柔性衬底形成的柔性第一导电层。 邻近柔性第一导体形成柔性二极​​管结构。 柔性开关与柔性二极管结构相邻地形成。 与柔性开关相邻地形成柔性的第二导电层。 柔性开关通常由有机材料形成。 柔性二极管结构通常由无序的无机材料形成。 柔性开关可以形成为当阈值量的电流通过柔性开关时产生高电阻路径，或者当阈值量的电流通过柔性开关时，形成柔性开关以产生低电阻路径 。 该方法包括在柔性衬底上沉积柔性第一导电层。 柔性无序无机材料沉积在形成多个柔性二极管结构的柔性第一导体上。 柔性有机材料沉积在柔性无序无机材料上，形成与多个柔性二极管结构相邻的多个柔性开关。 柔性第二导体沉积在柔性有机材料上。

    Non-volatile memory
    9.
    发明授权
    Non-volatile memory 失效
    非易失性存储器

    公开(公告)号：US06646912B2

    公开(公告)日：2003-11-11

    申请号：US09875356

    申请日：2001-06-05

    申请人： Terril N. Hurst ,  Craig Perlov ,  Carol Wilson ,  Carl Taussig

    发明人： Terril N. Hurst ,  Craig Perlov ,  Carol Wilson ,  Carl Taussig

    IPC分类号： G11C1136

    CPC分类号： G11C17/16 ,  G11C8/10

    摘要： A data storage device is disclosed that comprises a cross-point memory array formed on a dielectric substrate material. The cross-point memory array comprises first and second sets of transverse electrodes separated by a storage layer including at least one semiconductor layer. The storage layer forms a non-volatile memory element at each crossing point of electrodes from the first and second sets. Each memory element can be switched between low and high impedance states, representing respective binary data states, by application of a write signal in the form of a predetermined current density through the memory element. Each memory element includes a diode junction formed in the storage layer, at least whilst in the low impedance state. A plurality of the data storage devices can be stacked and laminated into a memory module providing inexpensive high capacity data storage. Such a memory module can be employed in an archival data storage system in which the memory module provides a write-once data storage unit receivable in an appliance or interface card.

    摘要翻译： 公开了一种数据存储装置，其包括形成在电介质基板材料上的交叉点存储器阵列。 交叉点存储器阵列包括由包括至少一个半导体层的存储层分开的第一组和第二组横向电极。 存储层在与第一和第二组的电极的每个交叉点处形成非易失性存储元件。 通过以预定电流密度的形式通过存储元件施加写入信号，每个存储元件可以在表示相应的二进制数据状态​​的低阻抗状态和高阻抗状态之间切换。 每个存储元件至少在处于低阻抗状态时包括在存储层中形成的二极管结。 可以将多个数据存储装置堆叠并层叠到提供便宜的高容量数据存储的存储器模块中。 这样的存储器模块可以用于档案数据存储系统，其中存储器模块提供可接收在设备或接口卡中的一次写入数据存储单元。