-
公开(公告)号：US20160181469A1
公开(公告)日：2016-06-23
申请号：US14941681
申请日：2015-11-16
申请人： PlayNitride Inc.
发明人： Shen-Jie Wang , Yu-Chu Li , Ching-Liang Lin
CPC分类号： H01L33/325 , H01L33/007 , H01L33/04 , H01L33/12
摘要： A semiconductor light-emitting device including a first N-type semiconductor layer, a P-type semiconductor layer, and a light-emitting layer is provided. The first N-type semiconductor layer contains aluminum, and the concentration of the N-type dopant thereof is greater than or equal to 5×1018 atoms/cm3. The light-emitting layer is disposed between the first N-type semiconductor layer and the P-type semiconductor layer. A manufacturing method of a semiconductor light-emitting device is also provided.
摘要翻译： 提供了包括第一N型半导体层，P型半导体层和发光层的半导体发光器件。 第一N型半导体层含有铝，其N型掺杂剂的浓度大于或等于5×1018原子/ cm3。 发光层设置在第一N型半导体层和P型半导体层之间。 还提供了一种半导体发光器件的制造方法。
-
2.发明申请公开(公告)号：US20170194529A1
公开(公告)日：2017-07-06
申请号：US15174790
申请日：2016-06-06
申请人： PlayNitride Inc.
发明人： Shen-Jie Wang , Yun-Li Li , Ching-Liang Lin
CPC分类号： H01L33/025 , H01L33/007 , H01L33/06 , H01L33/12 , H01L33/145 , H01L33/32 , H01L33/325
摘要： A semiconductor light-emitting device including at least one n-type semiconductor layer, at least one p-type semiconductor layer, and a light-emitting layer is provided. The light-emitting layer is disposed between the at least one p-type semiconductor layer and the at least one n-type semiconductor layer. A ratio of carbon concentration to aluminum concentration in any one semiconductor layer containing aluminum in the semiconductor light-emitting device ranges from 10−4 to 10−2.
-
公开(公告)号：US20170141262A1
公开(公告)日：2017-05-18
申请号：US15175789
申请日：2016-06-07
申请人： PlayNitride Inc.
发明人： Shen-Jie Wang , Yu-Chu Li , Ching-Liang Lin
摘要： A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InxGa1-xN, where 0
-
公开(公告)号：US20160181475A1
公开(公告)日：2016-06-23
申请号：US14941686
申请日：2015-11-16
申请人： PlayNitride Inc.
发明人： Shen-Jie Wang , Yu-Chu Li
CPC分类号： H01L33/325 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/42
摘要： A semiconductor light-emitting device including a first type doped semiconductor layer, a second type doped semiconductor layer, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The contact layer is disposed on the second type doped semiconductor layer. The second type doped semiconductor layer is disposed between the contact layer and the light-emitting layer. Dopants in the contact layer include a group IVA element and a group IIA element. The group IVA element is an electron donor. The group IIA element is an electron acceptor. The doping concentration of the group IVA element is greater than or equal to 1020 atoms/cm3, and the doping concentration of the group IIA element is greater than or equal to 1020 atoms/cm3.
摘要翻译： 提供了包括第一掺杂半导体层，第二掺杂半导体层，发光层和接触层的半导体发光器件。 发光层设置在第一掺杂半导体层和第二掺杂半导体层之间。 接触层设置在第二类型掺杂半导体层上。 第二种掺杂半导体层设置在接触层和发光层之间。 接触层中的掺杂剂包括IVA族元素和IIA族元素。 IVA族元素是电子给体。 IIA族元素是电子受体。 IVA族元素的掺杂浓度大于或等于1020原子/ cm3，IIA族元素的掺杂浓度大于或等于1020原子/ cm3。
-
公开(公告)号：US20160181472A1
公开(公告)日：2016-06-23
申请号：US14941683
申请日：2015-11-16
申请人： PlayNitride Inc.
发明人： Shen-Jie Wang , Yu-Chu Li
摘要： A semiconductor light-emitting device including an N-type semiconductor layer, a plurality of P-type semiconductor layers, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the N-type semiconductor layer and the whole of the P-type semiconductor layers. The P-type semiconductor layers are disposed between the contact layer and the light-emitting layer. All the P-type semiconductor layers between the light-emitting layer and the contact layer include aluminum.
摘要翻译： 提供了包括N型半导体层，多个P型半导体层，发光层和接触层的半导体发光器件。 发光层设置在N型半导体层和整个P型半导体层之间。 P型半导体层设置在接触层和发光层之间。 发光层和接触层之间的所有P型半导体层包括铝。
-
公开(公告)号：US09741898B2
公开(公告)日：2017-08-22
申请号：US15175789
申请日：2016-06-07
申请人： PlayNitride Inc.
发明人： Shen-Jie Wang , Yu-Chu Li , Ching-Liang Lin
摘要： A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InxGa1-xN, where 0
-
公开(公告)号：US10431710B2
公开(公告)日：2019-10-01
申请号：US15660070
申请日：2017-07-26
申请人： PLAYNITRIDE INC.
发明人： Jyun-De Wu , Shen-Jie Wang , Yen-Lin Lai
摘要： A light emitting device includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer includes a first semiconductor sublayer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first semiconductor sublayer includes a heavily doped part and a lightly doped part which are doped by a first type dopant. A doping concentration of the first type dopant in the heavily doped part is equal to 1018 atoms/cm3 or between 1017 atoms/cm3 and 1018 atoms/cm3. A doping concentration of the first type dopant in the lightly doped part is less than or equal to 1017 atoms/cm3.
-
公开(公告)号：US10411159B2
公开(公告)日：2019-09-10
申请号：US15936460
申请日：2018-03-27
申请人： PlayNitride Inc.
发明人： Yen-Lin Lai , Shen-Jie Wang , Jyun-De Wu , Chien-Chih Yen
摘要： A patterned substrate includes a main base and a plurality of patterned structures. The main base has at least one device-disposed region and a cutting region surrounding the device-disposed region. The patterned structures are integratedly formed with the main base, and only distributed in the cutting region of the main base. The patterned structures are separated from each other.
-
公开(公告)号：US20180277718A1
公开(公告)日：2018-09-27
申请号：US15936460
申请日：2018-03-27
申请人： PlayNitride Inc.
发明人： Yen-Lin Lai , Shen-Jie Wang , Jyun-De Wu , Chien-Chih Yen
CPC分类号： H01L33/20 , H01L21/78 , H01L23/544 , H01L23/562 , H01L33/0075 , H01L33/12
摘要： A patterned substrate includes a main base and a plurality of patterned structures. The main base has at least one device-disposed region and a cutting region surrounding the device-disposed region. The patterned structures are integratedly formed with the main base, and only distributed in the cutting region of the main base. The patterned structures are separated from each other.
-
公开(公告)号：US09608161B2
公开(公告)日：2017-03-28
申请号：US14941683
申请日：2015-11-16
申请人： PlayNitride Inc.
发明人： Shen-Jie Wang , Yu-Chu Li
摘要： A semiconductor light-emitting device including an N-type semiconductor layer, a plurality of P-type semiconductor layers, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the N-type semiconductor layer and the whole of the P-type semiconductor layers. The P-type semiconductor layers are disposed between the contact layer and the light-emitting layer. All the P-type semiconductor layers between the light-emitting layer and the contact layer include aluminum.
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.012 秒)
