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21 条记录 (耗时 0.014 秒)

    Light emitting diode chip
    1.
    发明授权
    Light emitting diode chip 有权

    公开(公告)号：US10109768B2

    公开(公告)日：2018-10-23

    申请号：US15643485

    申请日：2017-07-07

    申请人： PlayNitride Inc.

    发明人： Jyun-De Wu ,  Yu-Yun Lo

    IPC分类号： H01L33/20 ,  H01L33/06 ,  H01L33/30 ,  H01L33/40 ,  H01L33/42

    摘要： A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A ratio of a sum of thicknesses of all semiconductor layers of the light-emitting diode chip over a maximum width of the light-emitting diode chip ranges from 0.02 to 1.5. A ratio of a sum of thicknesses of all semiconductor layers located in a side of the light-emitting layer toward the p-type semiconductor layer over the sum of thicknesses of all semiconductor layers of the light-emitting diode chip ranges from 0.05 to 0.2.

    EPITAXIAL STRUCTURE
    2.
    发明申请
    EPITAXIAL STRUCTURE 有权
    外来结构

    公开(公告)号：US20160099380A1

    公开(公告)日：2016-04-07

    申请号：US14809271

    申请日：2015-07-26

    申请人： PlayNitride Inc.

    发明人： Yen-Lin Lai ,  Jyun-De Wu

    IPC分类号： H01L33/12

    CPC分类号： H01L33/12

    摘要： An epitaxial structure including an epitaxial substrate, a first buffer layer, a first pattern mask layer, a second buffer layer and a second pattern mask layer. The first buffer layer is disposed on the epitaxial substrate. The first pattern mask layer is disposed on the first buffer layer. The second buffer layer is disposed on the first pattern mask layer and a part of the first buffer layer. The second pattern mask layer is disposed on the second buffer layer. A projection of the first pattern mask layer projected on the first buffer layer and a projection of the second pattern mask layer projected on the first buffer layer cover at least 70% of the total area of the first buffer layer.

    摘要翻译： 一种外延结构，包括外延衬底，第一缓冲层，第一图案掩模层，第二缓冲层和第二图案掩模层。 第一缓冲层设置在外延衬底上。 第一图案掩模层设置在第一缓冲层上。 第二缓冲层设置在第一图案掩模层和第一缓冲层的一部分上。 第二图案掩模层设置在第二缓冲层上。 投影在第一缓冲层上的第一图案掩模层的投影和投影在第一缓冲层上的第二图案掩模层的投影覆盖第一缓冲层的总面积的至少70％。

    Epitaxial structure with pattern mask layers for multi-layer epitaxial buffer layer growth
    5.
    发明授权
    Epitaxial structure with pattern mask layers for multi-layer epitaxial buffer layer growth 有权
    具有图案掩模层的外延结构，用于多层外延缓冲层生长

    公开(公告)号：US09548417B2

    公开(公告)日：2017-01-17

    申请号：US14809271

    申请日：2015-07-26

    申请人： PlayNitride Inc.

    发明人： Yen-Lin Lai ,  Jyun-De Wu

    IPC分类号： H01L33/12

    CPC分类号： H01L33/12

    摘要： An epitaxial structure including an epitaxial substrate, a first buffer layer, a first pattern mask layer, a second buffer layer and a second pattern mask layer. The first buffer layer is disposed on the epitaxial substrate. The first pattern mask layer is disposed on the first buffer layer. The second buffer layer is disposed on the first pattern mask layer and a part of the first buffer layer. The second pattern mask layer is disposed on the second buffer layer. A projection of the first pattern mask layer projected on the first buffer layer and a projection of the second pattern mask layer projected on the first buffer layer cover at least 70% of the total area of the first buffer layer.

    摘要翻译： 一种外延结构，包括外延衬底，第一缓冲层，第一图案掩模层，第二缓冲层和第二图案掩模层。 第一缓冲层设置在外延衬底上。 第一图案掩模层设置在第一缓冲层上。 第二缓冲层设置在第一图案掩模层和第一缓冲层的一部分上。 第二图案掩模层设置在第二缓冲层上。 投影在第一缓冲层上的第一图案掩模层的投影和投影在第一缓冲层上的第二图案掩模层的投影覆盖第一缓冲层的总面积的至少70％。

    Semiconductor laser device
    6.
    发明授权
    Semiconductor laser device 有权

    公开(公告)号：US10103516B2

    公开(公告)日：2018-10-16

    申请号：US15409157

    申请日：2017-01-18

    申请人： PlayNitride Inc.

    发明人： Yen-Lin Lai ,  Jyun-De Wu

    IPC分类号： H01S3/097 ,  H01S5/00 ,  H01S5/22 ,  H01S5/042 ,  H01S5/10 ,  H01S5/183 ,  H01S5/20

    摘要： A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed between the electrode pad layer and the light emitting layer. The transparent conductive layer is disposed between the electrode pad layer and the first semiconductor layer. The first semiconductor layer has a ridged structure on one side away from the light emitting layer. The electrode pad layer has at least one empty area, and an orthogonal projection of the at least one empty area along a direction perpendicular to the light emitting layer is overlapped with at least a portion of an orthogonal projection of the ridged structure along the direction.

    SEMICONDUCTOR LASER DEVICE
    7.
    发明申请
    SEMICONDUCTOR LASER DEVICE 审中-公开

    公开(公告)号：US20180138663A1

    公开(公告)日：2018-05-17

    申请号：US15409157

    申请日：2017-01-18

    申请人： PlayNitride Inc.

    发明人： Yen-Lin Lai ,  Jyun-De Wu

    IPC分类号： H01S5/343 ,  H01S5/042 ,  H01S5/22 ,  H01S5/10 ,  H01S5/30

    CPC分类号： H01S5/22 ,  H01S5/0224 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/18308 ,  H01S5/18394 ,  H01S5/2018 ,  H01S5/34333

    摘要： A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed between the electrode pad layer and the light emitting layer. The transparent conductive layer is disposed between the electrode pad layer and the first semiconductor layer. The first semiconductor layer has a ridged structure on one side away from the light emitting layer. The electrode pad layer has at least one empty area, and an orthogonal projection of the at least one empty area along a direction perpendicular to the light emitting layer is overlapped with at least a portion of an orthogonal projection of the ridged structure along the direction.

    NITRIDE SEMICONDUCTOR STRUCTURE
    10.
    发明申请
    NITRIDE SEMICONDUCTOR STRUCTURE 有权
    氮化物半导体结构

    公开(公告)号：US20160087154A1

    公开(公告)日：2016-03-24

    申请号：US14810433

    申请日：2015-07-27

    申请人： PlayNitride Inc.

    发明人： Yen-Lin Lai ,  Jyun-De Wu

    IPC分类号： H01L33/32 ,  H01L33/06

    CPC分类号： H01L33/325 ,  H01L29/152 ,  H01L33/06

    摘要： A nitride semiconductor structure including a substrate, a first type nitride semiconductor layer disposed on the substrate, an active layer disposed between the substrate and the first type nitride semiconductor layer and a second type nitride semiconductor layer disposed between the substrate and the active layer is provided. The active layer includes a first multiple quantum well structure including a plurality of first quantum well layers and a plurality of first barrier layers staggered with each other, and a second multiple quantum well structure including a plurality of second quantum well layers and a plurality of second barrier layers staggered with each other. A second type dopant is doped into at least one of the second barrier layers, and a concentration of the second dopant in the second barrier layer is higher than that of the second dopant in the second type nitride semiconductor layer.

    摘要翻译： 提供一种氮化物半导体结构，其包括衬底，设置在衬底上的第一氮化物半导体层，设置在衬底和第一氮化物半导体层之间的有源层和设置在衬底和有源层之间的第二氮化物半导体层 。 有源层包括第一多量子阱结构，其包括多个第一量子阱层和彼此交错的多个第一势垒层，以及包括多个第二量子阱层和多个第二量子阱层的第二多量子阱结构 屏障层彼此交错。 第二类型掺杂剂被掺杂到第二阻挡层中的至少一个中，并且第二阻挡层中的第二掺杂剂的浓度高于第二氮化物半导体层中的第二掺杂剂的浓度。