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1.发明授权Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects 失效辐射硬化半导体器件和集成电路闭锁效应的方法
公开(公告)号：US4318750A
公开(公告)日：1982-03-09
申请号：US107966
申请日：1979-12-28
IPC分类号： H01L21/263 , H01L7/54 , H01L21/22
CPC分类号： H01L21/263 , Y10S257/906 , Y10S438/953
摘要： A method for eliminating the latch-up effect in integrated circuits having parasitic pnpn structures has been described comprising the step of irradiating the circuit with high energy particulate ions to provide low lifetime regions in the circuit to lower parasitic transistor gain.The invention overcomes the problem of latch-up effect in integrated circuits where parasitic pnpn structures act as thyristors or silicon-controlled rectifiers which provide a low impedance path across the pnpn structure when the thyristor or silicon-controlled rectifier is turned on such as by transient ionizing radiation or by transient circuit voltages which forward bias the external junctions of the pnpn structure.
摘要翻译： 已经描述了一种用于消除具有寄生pnpn结构的集成电路中的闩锁效应的方法，其包括用高能微粒离子照射电路以在电路中提供低寿命区域以降低寄生晶体管增益的步骤。 本发明克服了在集成电路中的闩锁效应的问题，其中寄生pnpn结构用作晶闸管或硅控整流器，当晶闸管或可控硅整流器接通时，例如通过瞬态 电离辐射或通过正向偏置pnpn结构的外部结的瞬态电路电压。
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公开(公告)号：US5038042A
公开(公告)日：1991-08-06
申请号：US466141
申请日：1990-01-16
申请人： J. Richard Hansen , John Bartko
发明人： J. Richard Hansen , John Bartko
CPC分类号： G01T1/2002 , G01T1/202
摘要： High resolution scintillation counters comprise a flat-faced photomultiplier tube 10 optically coupled to a long scintillator rod 30 having reduced internal light reflectance 45 and a medium 55 between the photomultiplier tube and the scintillator, said medium having both an index of refraction less than that of the scintillator and the capacity to attenuate light traveling from the scintillator to the photomultiplier on the basis of the light's point of origin within the scintillator. In preferred embodiments, the medium comprises air. The scintillation counters disclosed are useful in the detection of electromagnetic radiation, especially gamma rays.
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3.发明授权Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation 失效通过核辐射在诸如半导体物质的材料中形成轮廓照射区域
公开(公告)号：US4278475A
公开(公告)日：1981-07-14
申请号：US936
申请日：1979-01-04
申请人： John Bartko , Earl S. Schlegel
发明人： John Bartko , Earl S. Schlegel
IPC分类号： H01L21/322 , H01L21/263 , H01L29/32 , H01L7/54 , H01L21/22
CPC分类号： H01L21/263 , H01L29/32 , Y10S438/961
摘要： Irradiated regions are formed in materials such as semiconductor bodies by nuclear radiation where the irradiated regions are of a desired thickness, dosage and dosage gradient, a desired distance from a selected surface of the material. A nuclear radiation beam from a given radiation source radiating particles with molecular weight of at least one (1) is provided that can penetrate the material through a selected surface to a depth greater than the maximum depth of the irradiated region from the selected surface. A beam modifier is formed of a given material and non-uniform shape to modify the energy of the radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradiated region of a desired thickness and dosage gradient in the material a given distance from the selected surface on irradiation of the material through the selected surface with the transmitted radiation beam. The material in which the desired irradiated region is to be formed is positioned with the selected surface thereof to be exposed to the radiation beam from the radiation source on transmission through the beam modifier. The material is thereafter irradiated through the beam modifier and through the selected surface with the radiation beam, preferably while the beam modifier and material are moved relative to each other through a predetermined motion, to form in the material an irradiated region of desired thickness, dosage and dosage gradient, a desired distance from the selected surface. The irradiated region thus formed in semiconductor bodies are particularly of value in changing the electrical characteristics without substantial change of other electrical characteristics.
摘要翻译： 照射区域通过核辐射在诸如半导体物质的材料中形成，其中照射区域具有期望的厚度，剂量和剂量梯度，与材料的选定表面的期望距离。 提供了辐射分子量为至少一个（1）的分子量的给定辐射源的核辐射束，其能够穿过选定表面的深度大于被选择表面的照射区域的最大深度的深度。 光束修改器由给定的材料和不均匀的形状形成，以改变辐射束在其中穿过其中的能量，以形成能够在材料中形成给定距离的期望厚度和剂量梯度的辐射区域的透射辐射束 通过所述透射的辐射束通过所选择的表面照射材料从所选择的表面。 将要形成所需照射区域的材料定位成使其选择的表面暴露于通过光束改性剂透射时来自辐射源的辐射束。 然后，材料通过光束调节剂并通过所选择的表面用辐射束照射，优选地，当光束调节剂和材料通过预定的运动相对于彼此移动时，在材料中形成所需厚度的照射区域，剂量 和剂量梯度，与所选表面的期望距离。 由此形成在半导体本体中的照射区域在改变电特性而没有其他电特性的实质变化的情况下特别有价值。
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公开(公告)号：US5250388A
公开(公告)日：1993-10-05
申请号：US200331
申请日：1988-05-31
CPC分类号： H01L51/0508 , B29C59/16 , H01L51/002 , H01L51/0041 , H01L51/0512 , H01L51/0516 , H01L51/0541 , B29C2035/0872
摘要： Processes for producing stable, radiation hard, highly conductive polymers by a combination of chemical doping and ion irradiation and microelectronics are described. The highly conductive polymers formed by these processes may contain regions of different kinds of conductivity on the same polymer. Resist coatings and masks are used in conjunction with chemical doping and ion irradiation to create specific predetermined n and p conductivity patterns and insulation areas on polymeric films of selected thicknesses for electronic circuitry applications. The resulting circuitry, besides having a conductivity approaching that of metal, is extremely light in weight, flexible, and conductively stable. Several different configurations of microelectronic junction devices fabricated from single type or multiple type conductivity polymer films used either alone or with a polymer of opposite conductivity and a suitable metal or metals are disclosed.
摘要翻译： 描述了通过化学掺杂和离子照射和微电子的组合产生稳定的，辐射硬的，高导电的聚合物的方法。 通过这些方法形成的高导电性聚合物可以在同一聚合物上含有不同种类的导电性的区域。 抗蚀剂涂层和掩模与化学掺杂和离子辐射结合使用，以在电子电路应用的选定厚度的聚合物膜上产生特定的预定n和p导电图案和绝缘区域。 所得到的电路除了具有接近金属的导电性之外，重量轻，柔性和导电稳定性非常轻。 公开了由单一或多类型导电聚合物膜制造的微电子连接装置的几种不同结构，其单独使用或与具有相反导电性的聚合物和适用的金属或金属一起使用。
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公开(公告)号：US4857259A
公开(公告)日：1989-08-15
申请号：US863899
申请日：1986-05-16
摘要： A neutron dosimeter and a method for neutron dosimetry involving a two-layer structure, one layer being a fissile material, and the other being a material which changes its conductivity in accordance with a density of implanted ions. Neutrons striking the fissile material result in the production of energetic ions, a determinable number of which implant themselves in the second layer and so alter its conductivity. Measurements of the conductivity of the second layer provide information from which neutron dose may be inferred.
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公开(公告)号：US4804514A
公开(公告)日：1989-02-14
申请号：US939834
申请日：1986-12-09
摘要： A method and apparatus for measuring a neutron flux in which the neutrons induce fission reactions in the layer of fissile material, the fission reactions in turn inducing light pulses in a scintillator material. A photomultiplier tube detects the light pulses and emits an electrical pulse in response. The electrical pulses are summed, checked for coincidence, stored, and otherwise manipulated in order to detect and measure neutron flux. In one advantageous embodiment of the invention, several different fissile materials or coated and uncoated fissile materials are used in order to obtain a spectral distribution of the incident neutron flux. At another embodiment, opposed detectors are used in order to discriminate between actual neutron-induced fission events and background events.
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7.发明授权
公开(公告)号：US4240844A
公开(公告)日：1980-12-23
申请号：US972302
申请日：1978-12-22
IPC分类号： H01L21/322 , H01L21/263 , H01L21/26
CPC分类号： H01L21/263 , Y10S148/165
摘要： The switching time of certain semiconductor devices is decreased while maintaining other electrical characteristics of the devices by irradiating them with a neutron radiation source of greater than 1.0 Mev. to a dosage between 1.times.10.sup.11 and 1.times.10.sup.15 neutrons per square centimeter. The irradiation is preferably to a dosage between 1.times.10.sup.1 and 1.times.10.sup.14 neutrons per square centimeter and preferably has substantial energy greater than 14 Mev. The devices are also annealed during and/or subsequent to the irradiation at a temperature higher than the highest specified temperature and preferably at least 50.degree. C. higher than the highest specified temperature.
摘要翻译： 某些半导体器件的切换时间减少，同时通过用大于1.0Mev的中子辐射源照射器件来保持器件的其它电气特性。 至1x1011至1×10 15个中子每平方厘米的剂量。 照射优选为每平方厘米1×101-1×1014个中子之间的剂量，并且优选具有大于14Mev的实质能量。 在高于最高规定温度且优选高于最高规定温度的至少50℃的温度下，在照射期间和/或之后也将器件退火。
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公开(公告)号：US4881247A
公开(公告)日：1989-11-14
申请号：US325016
申请日：1989-03-16
申请人： Richard C. Smith , John Bartko , Arnold H. Fero
发明人： Richard C. Smith , John Bartko , Arnold H. Fero
IPC分类号： G21C17/06
CPC分类号： G21C17/063
摘要： Disclosed is a method and apparatus for measuring the burnup of nuclear fuel. A curve giving the calculated relationship between the fast neutron emission rate and the burnup of fuel is prepared. The fast neutron counting rate from a sample of nuclear fuel of known burnup is measured and the proportionality ratio between that measurement and the fast neutron emission given by the curve for the same burnup is determined. The fast neutron counting rate of nuclear fuel of unknown burnup is then measured and multiplied by the proportionality ratio to determine the fast neutron emission rate, from which the unknown burnup is then determined by means of the curve.
摘要翻译： 公开了一种用于测量核燃料燃耗的方法和装置。 给出了快中子排放速率和燃料燃耗之间计算关系的曲线。 测量已知燃耗的核燃料样品的快中子计数率，并确定该测量与同一燃耗曲线给出的快中子发射之间的比例比。 然后测量未知燃耗的核燃料的快中子计数率并乘以比例比，以确定快中子排放速率，然后通过曲线确定未知燃耗。
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公开(公告)号：US4357417A
公开(公告)日：1982-11-02
申请号：US251648
申请日：1981-04-06
申请人： John Bartko , Patrick E. Felice , Phillip D. Blais
发明人： John Bartko , Patrick E. Felice , Phillip D. Blais
CPC分类号： G03F7/2037 , G03F1/20
摘要： A method of lithographically forming a pattern on a surface is disclosed. The surface on which the pattern is to be formed is first coated with a resist layer. A mask preferably consisting of a beryllium of foil and a pattern gold layer affixed thereto is then positioned in overlying relationship to the resist layer. The thickness of the beryllium foil is selected such that it is transparent to high energy particles of a preselected energy while the combination of the pattern gold areas and the beryllium foil is impervious to these particles. A flood beam of high energy particles is directed such that it impinges on the beryllium foil thereby exposing the resist in areas not protected by the combination of the beryllium foil and the gold. The resist layer is processed to produce a patterned layer.
摘要翻译： 公开了一种在表面上光刻形成图案的方法。 首先将其上形成图案的表面涂覆有抗蚀剂层。 优选由箔的铍和附着于其上的图案金层组成的掩模以与抗蚀剂层的重叠关系定位。 选择铍箔的厚度，使得其对预定能量的高能粒子是透明的，而图案金区域和铍箔片的组合对于这些颗粒是不渗透的。 引导高能粒子的泛光束使其撞击在铍箔上，从而在未被铍箔和金的组合保护的区域中露出抗蚀剂。 处理抗蚀剂层以产生图案化层。
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10.发明授权
公开(公告)号：US4311534A
公开(公告)日：1982-01-19
申请号：US163548
申请日：1980-06-27
IPC分类号： H01L21/322 , H01L21/263 , H01L29/167 , H01L29/74 , H01L7/54
CPC分类号： H01L29/167 , H01L21/263 , Y10S148/084
摘要： A method of reducing the reverse recovery charge of thyristors without substantially increasing forward voltage drop by first determining the depth of the anode PN junction from a major surface adjoining a cathode emitter region. The depth of maximum defect generation in thyristor on irradiation through the major surface with a given radiation source radiating particles with molecular weight greater than one, preferably proton or alpha particles, and adjusting the energy level at the major surface of the thyristor from the radiation source to provide the depth of maximum defect generation adjacent the anode PN junction and preferably in the anode base region within 20 micrometers of the anode PN junction or in the anode emitter region within 15 micrometers of the anode PN junction. Thereafter the thyristor is irradiated through said major surface with the adjusted energy level from the radiation source to a given dosage to reduce the reverse recovery stored charge of the thyristor without substantially increasing the forward voltage drop.
摘要翻译： 一种减少晶闸管的反向恢复电荷的方法，而不会通过首先确定来自邻接阴极发射极区的主表面的阳极PN结的深度而基本上增加正向压降。 通过具有给定辐射源的主表面照射的晶闸管中的最大缺陷产生的深度辐射分子量大于1的颗粒，优选质子或α粒子，并且从辐射源调节晶闸管的主表面处的能级 以提供邻近阳极PN结的最佳缺陷产生的深度，优选在阳极PN结的20微米内的阳极基极区域或阳极PN结的15微米内的阳极发射极区域中提供最大缺陷产生的深度。 此后，晶闸管通过所述主表面照射具有从辐射源到给定剂量的调节能级，以减少晶闸管的反向恢复存储电荷，而不会基本上增加正向压降。
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