公开(公告)号：US4238761A

公开(公告)日：1980-12-09

申请号：US581255

申请日：1975-05-27

申请人： Earl S. Schlegel ,  Derrick J. Page

发明人： Earl S. Schlegel ,  Derrick J. Page

IPC分类号： H01L21/263 ,  H01L29/06 ,  H01L29/74 ,  H01L29/744

CPC分类号： H01L21/263 ,  H01L29/0661 ,  H01L29/7412 ,  H01L29/7428 ,  H01L29/744

摘要： An integrated amplifying gate thyristor is provided with an integral diode in the thyristor structure in the same semiconductor body. The diode provides gate assist turn-off capability with the same gate electrode used to turn-on a pilot thyristor of the device. The common cathode-base region of the pilot and main thyristors also is common with the anode region of the diode. The current gain of the NPN transistor structure formed at the diode and the common anode-base region at the diode is less than the ratio of I.sub.FB /I.sub.g, where I.sub.FB is the forward anode current on triggering the main thyristor into the low impedance conduction state by applying a threshold negative gate assist current (I.sub.G) and an operating anode-cathode load potential, and I.sub.g is a negative gate current selected to assist in turn-off of the main thyristor. Preferably, the current gain of said NPN transistor structure at the diode is controlled by selectively irradiating the diode preferably with electron radiation, by adding a shallow impurity lip to the cathode region of the diode toward the main thyristor, or both.

摘要翻译： 集成放大栅极晶闸管在同一半导体体中的晶闸管结构中设置有一体的二极管。 二极管提供栅极辅助关断能力，与用于接通器件的导频晶闸管的相同的栅电极。 导联和主晶闸管的公共阴极 - 基极区域也与二极管的阳极区域相同。 在二极管处形成的NPN晶体管结构的电流增益和二极管上的公共阳极 - 基极区域的电流增益小于IFB / Ig的比率，其中IFB是将主晶闸管触发到低阻抗导通状态时的正向阳极电流 通过施加阈值负栅极辅助电流（IG）和工作阳极 - 阴极负载电位，并且Ig是选择用于辅助主晶闸管关断的负栅极电流。 优选地，通过在二极管的阴极区域向主晶闸管添加浅杂质边缘或两者，优选地以电子辐射优选照射二极管来控制所述NPN晶体管结构在二极管处的电流增益。

公开(公告)号：US4176371A

公开(公告)日：1979-11-27

申请号：US848007

申请日：1977-11-03

申请人： Earl S. Schlegel

发明人： Earl S. Schlegel

IPC分类号： H01L29/74 ,  H01L29/87

CPC分类号： H01L29/87 ,  H01L29/7424

摘要： A thyristor having an auxiliary cathode emitter region disposed in the central portion of the device in PN junction relationship with a cathode base region is disclosed. An extra impurity region of the same conductivity type as the cathode base region is disposed in the cathode base region in the central portion of the device inwardly of the outer boundary of the auxiliary cathode emitter. The extra impurity region has a higher impurity density gradient adjacent the common PN junction formed by the cathode and anode base regions than the remainder of such junction.

摘要翻译： 公开了一种晶闸管，其具有设置在与阴极基极区域PN结关系的器件的中心部分中的辅助阴极发射极区域。 在辅助阴极发射体的外边界内部的器件的中央部分的阴极基极区域中设置与阴极基极区域相同的导电类型的额外的杂质区域。 附加杂质区域与阴极和阳极基极区域形成的公共PN结相邻的杂质密度梯度高于其余部分。

公开(公告)号：US4278476A

公开(公告)日：1981-07-14

申请号：US100680

申请日：1979-12-05

申请人： John Bartko ,  Earl S. Schlegel

发明人： John Bartko ,  Earl S. Schlegel

IPC分类号： H01L21/265 ,  H01L29/08 ,  H01L29/10 ,  H01L29/74

CPC分类号： H01L21/26513 ,  H01L29/0834 ,  H01L29/102 ,  Y10S148/084

摘要： A method for making a pnpn semiconductor reverse conducting thyristor comprises the steps of forming n-type semiconductor layers on both sides of a p-type semiconductor substrate for forming an n-type emitter layer and an n-type anode-base layer. A p-type semiconductor impurity region is formed in the n-type anode-base layer for forming a p-type anode layer. A p.sup.+ -type semiconductor layer is ion implanted in the p-type substrate adjacent to the n-type cathode emitter layer by irradiating it with boron atoms.

摘要翻译： 制造pnpn半导体反向导通晶闸管的方法包括在用于形成n型发射极层和n型阳极基底层的p型半导体衬底的两侧上形成n型半导体层的步骤。 在用于形成p型阳极层的n型阳极基底层中形成p型半导体杂质区。 通过用硼原子照射p +型半导体层，离子注入邻近n型阴极发射极层的p型衬底中。

公开(公告)号：US4206469A

公开(公告)日：1980-06-03

申请号：US942580

申请日：1978-09-15

申请人： Maurice H. Hanes ,  Earl S. Schlegel

发明人： Maurice H. Hanes ,  Earl S. Schlegel

IPC分类号： H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L29/72

CPC分类号： H01L29/7802 ,  Y10S148/126

摘要： A planar high power Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) including a substrate with an epitaxial layer on a surface thereof. A gate electrode including a strip of metal extending across a surface of the epitaxial layer and having a plurality of fingers extending therefrom along its length. The gate electrode being electrically insulated from the epitaxial layer by a layer of oxide. A source electrode in the surface of the epitaxial layer including fingers extending therefrom and interdigitating with the fingers of the gate electrode. There are p and n diffusion regions formed in the epitaxial layer except in an area under each of the gate fingers, which area remains undiffused. A drain electrode is connected to the surface of the substrate opposed to the surface upon which the epitaxial layer is deposited.During operation of the MOSFET as the blocking voltage across the transistor increases and the transistor is in the OFF state, the horizontal components of fields from the adjacent and closely spaced p-regions cancel each other so that voltage breakdown due to junction curvature is avoided.

摘要翻译： 包括在其表面上具有外延层的衬底的平面大功率金属氧化物半导体场效应晶体管（MOSFET）。 一种栅极电极，包括延伸穿过外延层的表面的金属条，并且具有沿其长度从其延伸的多个指状物。 栅电极通过一层氧化物与外延层电绝缘。 在外延层的表面中的源电极包括从其延伸的指状物，并与栅电极的指状物交错。 在外延层中形成有p和n扩散区域，除了在每个栅极指状物下方的区域中，该区域保持不扩散。 漏电极连接到与沉积外延层的表面相对的衬底表面。 在MOSFET的工作过程中，晶体管两端的阻断电压增加，晶体管处于截止状态，来自相邻和紧密间隔的p区的场的水平分量相互抵消，从而避免了由于结曲率引起的电压击穿。

公开(公告)号：US4313128A

公开(公告)日：1982-01-26

申请号：US37090

申请日：1979-05-08

申请人： Earl S. Schlegel ,  Derrick J. Page

发明人： Earl S. Schlegel ,  Derrick J. Page

IPC分类号： H01L21/52 ,  H01L23/051 ,  H01L23/48 ,  H01L25/07 ,  H01L25/18 ,  H01L23/02 ,  H01L23/12 ,  H01L23/42

CPC分类号： H01L24/72 ,  H01L23/051 ,  H01L25/072 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/13033

摘要： An electronic device is provided comprising two or more discrete semiconductor devices in an electrical circuit relationship, hermetically sealed within a single case member. Electrical and thermal conductivity between the semiconductor devices and electrodes on the case member is established and maintained by the application of a compressive force to the case member. The compressive force applied to the case member is distributed to the individual semiconductor devices sealed within the case member.

摘要翻译： 提供电子装置，其包括电气关系中的两个或更多个分立半导体器件，气密地密封在单个壳体内。 通过对外壳构件施加压缩力来建立和维持半导体器件与壳体上的电极之间的电导热性和导热性。 施加到壳体的压缩力被分配到密封在壳体内的各个半导体器件。

公开(公告)号：US4311534A

公开(公告)日：1982-01-19

申请号：US163548

申请日：1980-06-27

申请人： John Bartko ,  Krishan S. Tarneja ,  Chang K. Chu ,  Earl S. Schlegel

发明人： John Bartko ,  Krishan S. Tarneja ,  Chang K. Chu ,  Earl S. Schlegel

IPC分类号： H01L21/322 ,  H01L21/263 ,  H01L29/167 ,  H01L29/74 ,  H01L7/54

CPC分类号： H01L29/167 ,  H01L21/263 ,  Y10S148/084

摘要： A method of reducing the reverse recovery charge of thyristors without substantially increasing forward voltage drop by first determining the depth of the anode PN junction from a major surface adjoining a cathode emitter region. The depth of maximum defect generation in thyristor on irradiation through the major surface with a given radiation source radiating particles with molecular weight greater than one, preferably proton or alpha particles, and adjusting the energy level at the major surface of the thyristor from the radiation source to provide the depth of maximum defect generation adjacent the anode PN junction and preferably in the anode base region within 20 micrometers of the anode PN junction or in the anode emitter region within 15 micrometers of the anode PN junction. Thereafter the thyristor is irradiated through said major surface with the adjusted energy level from the radiation source to a given dosage to reduce the reverse recovery stored charge of the thyristor without substantially increasing the forward voltage drop.

摘要翻译： 一种减少晶闸管的反向恢复电荷的方法，而不会通过首先确定来自邻接阴极发射极区的主表面的阳极PN结的深度而基本上增加正向压降。 通过具有给定辐射源的主表面照射的晶闸管中的最大缺陷产生的深度辐射分子量大于1的颗粒，优选质子或α粒子，并且从辐射源调节晶闸管的主表面处的能级 以提供邻近阳极PN结的最佳缺陷产生的深度，优选在阳极PN结的20微米内的阳极基极区域或阳极PN结的15微米内的阳极发射极区域中提供最大缺陷产生的深度。 此后，晶闸管通过所述主表面照射具有从辐射源到给定剂量的调节能级，以减少晶闸管的反向恢复存储电荷，而不会基本上增加正向压降。

公开(公告)号：US4291329A

公开(公告)日：1981-09-22

申请号：US71631

申请日：1979-08-31

申请人： Maurice H. Hanes ,  Earl S. Schlegel

发明人： Maurice H. Hanes ,  Earl S. Schlegel

IPC分类号： H01L21/263 ,  H01L29/32 ,  H01L29/74 ,  H01L29/167

CPC分类号： H01L29/74 ,  H01L21/263 ,  H01L29/32

摘要： A four-layer semiconductor thyristor including a planar recombination region extending on both sides of a planar cathode-emitter junction.

摘要翻译： 包括在平面阴极 - 发射极结两侧延伸的平面复合区的四层半导体晶闸管。

公开(公告)号：US4270135A

公开(公告)日：1981-05-26

申请号：US103129

申请日：1979-12-13

申请人： Earl S. Schlegel ,  Maurice H. Hanes

发明人： Earl S. Schlegel ,  Maurice H. Hanes

IPC分类号： H01L31/10 ,  H01L31/0232 ,  H01L31/11 ,  H01L31/12

CPC分类号： H01L31/0232 ,  H01L31/1105

摘要： A photo-transistor includes a multi-apertured collector electrode disposed on a semiconductor collector layer. A laser diode and a light pipe are provided for each aperture such that the light from the laser is transmitted to its associated aperture via the light pipe. Means are included for sequentially pulsing each laser so as to cause a high-frequency intermittent current in the photo-transistor piece of molybdenum 88 which provides improved current flow and heat sinking for the transistor 10.

摘要翻译： 光电晶体管包括设置在半导体集电体层上的多孔集电极。 为每个孔提供激光二极管和光管，使得来自激光的光通过光管传输到其相关联的孔。 包括用于顺序地激励每个激光器以便在钼88的光电晶体管片段中产生高频间歇电流的装置，其为晶体管10提供改善的电流和散热。

公开(公告)号：US4060825A

公开(公告)日：1977-11-29

申请号：US656497

申请日：1976-02-09

申请人： Earl S. Schlegel

发明人： Earl S. Schlegel

IPC分类号： H01L29/87 ,  H01L29/74

CPC分类号： H01L29/87

摘要： A high speed, high power, four layer, two-terminal silicon diode switch or thyristor designed to be fired by dV/dt induced current is disclosed. The device includes a shunted main cathode emitter, and an auxiliary cathode emitter centrally of the main cathode emitter. The auxiliary cathode emitter is so dimensioned that it is deeper than the main cathode emitter; and the product of (1) the capacitance of the central forward blocking PN junction within the confines of the outer edge of the auxiliary cathode emitter, and (2) the effective radial resistance of the cathode base beneath the auxiliary cathode, and (3) the rate of application of the firing voltage on the anode dV/dt, is at least equal to seven tenths of a volt.

摘要翻译： 公开了一种设计为通过dV / dt感应电流触发的高速，高功率，四层，二端硅二极管开关或晶闸管。 该器件包括分流的主阴极发射极和主阴极发射极中心的辅助阴极发射极。 辅助阴极发射极的尺寸使其比主阴极发射极深; 以及（1）在辅助阴极发射体的外边界的范围内的中心前向阻挡PN结的电容的乘积，（2）辅助阴极下的阴极基极的有效径向电阻，以及（3） 施加电压在阳极dV / dt上的速率至少等于七分之一伏特。

公开(公告)号：US3975758A

公开(公告)日：1976-08-17

申请号：US581256

申请日：1975-05-27

申请人： Earl S. Schlegel

发明人： Earl S. Schlegel

IPC分类号： H01L23/051 ,  H01L23/58 ,  H01L25/18 ,  H01L29/06 ,  H01L29/423 ,  H01L29/744 ,  H01L23/02 ,  H01L23/12 ,  H01L23/32 ,  H01L29/74

CPC分类号： H01L29/423 ,  H01L23/051 ,  H01L23/58 ,  H01L25/18 ,  H01L29/0661 ,  H01L29/744 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/3011

摘要： A conventional amplifying gate thyristor is provided with gate assist turn-off capability by a package assembly. The package assembly comprises an encapsulation means adapted for packaging therein the amplifying gate thyristor, said encapsulation means including a locator means for aligning and supporting a gate contact adapted to make ohmic contact with a gate electrode of the amplifying gate thyristor and for aligning and supporting a diode relative to said gate electrode. A diode is disposed in a semiconductor body having cathode and anode regions forming a PN junction therebetween and adjoining opposed major surfaces of said semiconductor body, respectively. The diode is fastened to said locator means with said cathode region thereof making ohmic contact with said gate contact and said anode region thereof making ohmic contact with an anode electrode affixed on a major surface of said semiconductor body and adapted to make ohmic contact with a floating electrode of the amplifying gate thyristor.

摘要翻译： 常规的放大门晶闸管通过封装组件提供门辅助关断能力。 封装组件包括适于在其中封装放大栅极晶闸管的封装装置，所述封装装置包括定位器装置，用于对准和支撑适于与放大栅极晶闸管的栅电极欧姆接触的栅极触点，并用于对准和支撑 二极管相对于所述栅电极。 二极管设置在半导体本体中，阴极和阳极区域分别在其间形成PN结，并且分别与所述半导体本体的相邻主表面相邻。 二极管被紧固到所述定位器装置，其阴极区与所述栅极接触欧姆接触，并且所述阳极区与固定在所述半导体主体的主表面上的阳极电极欧姆接触并且适于与浮动的欧姆接触 放大栅极晶闸管的电极。