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    INCREASED SURFACE AREA ELECTRICAL CONTACTS FOR MICROELECTRONIC PACKAGES
    1.
    发明申请
    INCREASED SURFACE AREA ELECTRICAL CONTACTS FOR MICROELECTRONIC PACKAGES 有权
    用于微电子封装的增加的表面区域电气接触

    公开(公告)号：US20130187267A1

    公开(公告)日：2013-07-25

    申请号：US13354302

    申请日：2012-01-19

    申请人： Pui Chung Simon LAW ,  Dan YANG ,  Xunqing SHI

    发明人： Pui Chung Simon LAW ,  Dan YANG ,  Xunqing SHI

    IPC分类号： H01L23/498

    CPC分类号： H01L21/76898 ,  H01L27/14618 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A multilayer microelectronic device package includes one or more vertical electrical contacts. At least one semiconductor material layer is provided having one or more electrical devices fabricated therein. An electrical contact pad can be formed on or in the semiconductor material layer. Another material layer is positioned adjacent to the semiconductor material layer and includes a conductive material stud embedded in or bonded to the layer. A via is formed through at least a portion of the semiconductor material layer and the electrical contact pad and into the adjacent layer conducting material stud. The via is constructed such that the via tip terminates within the conducting material stud, exposing the conducting material. A metallization layer is disposed in the via such that the metallization layer contacts both the electrical contact pad and the conducting material stud exposed by the via tip.

    摘要翻译： 多层微电子器件封装包括一个或多个垂直电触点。 提供至少一个半导体材料层，其中制造有一个或多个电气器件。 可以在半导体材料层上或半导体材料层中形成电接触焊盘。 另一材料层定位成与半导体材料层相邻，并且包括嵌入或结合到该层的导电材料柱。 通孔通过半导体材料层和电接触焊盘的至少一部分形成，并进入相邻层导电材料柱。 通孔被构造成使得通孔末端终止于导电材料柱内，露出导电材料。 金属化层设置在通孔中，使得金属化层接触电接触焊盘和由通孔尖露露出的导电材料柱。

    HIGH OPTICAL EFFICIENCY CMOS IMAGE SENSOR
    2.
    发明申请
    HIGH OPTICAL EFFICIENCY CMOS IMAGE SENSOR 有权
    高光效CMOS图像传感器

    公开(公告)号：US20120187462A1

    公开(公告)日：2012-07-26

    申请号：US13010800

    申请日：2011-01-21

    申请人： Pui Chung Simon LAW ,  Dan YANG ,  Xunqing SHI

    发明人： Pui Chung Simon LAW ,  Dan YANG ,  Xunqing SHI

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14632 ,  H01L24/19 ,  H01L27/1461 ,  H01L27/14618 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L27/14692 ,  H01L2924/12043 ,  H01L2924/00

    摘要： High optical efficiency CMOS image sensors capable of sustaining pixel sizes less than 1.2 microns are provided. Due to high photodiode fill factors and efficient optical isolation, microlenses are unnecessary. Each sensor includes plural imaging pixels having a photodiode structure on a semiconductor substrate adjacent a light-incident upper surface of the image sensor. An optical isolation grid surrounds each photodiode structure and defines the pixel boundary. The optical isolation grid extends to a depth of at least the thickness of the photodiode structure and prevents incident light from penetrating through the incident pixel to an adjacent pixel. A positive diffusion plug vertically extends through a portion of the photodiode structure. A negative diffusion plug vertically extends into the semiconductor substrate for transferring charge generated in the photodiode to a charge collecting region within the semiconductor substrate. Pixel circuitry positioned beneath the photodiode controls charge transfer to image readout circuitry.

    摘要翻译： 提供能够维持小于1.2微米的像素尺寸的高光学效率CMOS图像传感器。 由于高光电二极管填充因子和高效的光隔离，微透镜是不必要的。 每个传感器包括在与图像传感器的光入射上表面相邻的半导体衬底上具有光电二极管结构的多个成像像素。 光学隔离栅格围绕每个光电二极管结构并且限定像素边界。 光隔离栅格延伸至至少光电二极管结构的厚度的深度，并防止入射光穿过入射像素到相邻像素。 正扩散插塞垂直延伸穿过光电二极管结构的一部分。 垂直延伸到半导体衬底中的负扩散插头用于将在光电二极管中产生的电荷转移到半导体衬底内的电荷收集区域。 位于光电二极管下面的像素电路控制电荷转移到图像读出电路。

    LUMINESCENCE QUENCHERS AND FLUOROGENIC PROBES FOR DETECTION OF REACTIVE SPECIES
    3.
    发明申请
    LUMINESCENCE QUENCHERS AND FLUOROGENIC PROBES FOR DETECTION OF REACTIVE SPECIES 有权
    用于检测反应物种的荧光探针和荧光探针

    公开(公告)号：US20090253118A1

    公开(公告)日：2009-10-08

    申请号：US12417672

    申请日：2009-04-03

    申请人： Dan YANG ,  Tao PENG

    发明人： Dan YANG ,  Tao PENG

    IPC分类号： C12Q1/00 ,  C07D265/38 ,  C07D407/04 ,  G01N21/76

    CPC分类号： G01N21/6428 ,  C07D307/94 ,  C07D493/10 ,  G01N33/533

    摘要： Provided herein are compounds or fluorogenic probes which can be used as reagents for measuring, detecting and/or screening ROS or RNS such as peroxynitrite or hypochlorite. Provided also herein are methods that can be used to measure, directly or indirectly, the amount of peroxynitrite or hypochlorite in chemical samples and biological samples such as cells and tissues in living organisms. Specifically, the methods include the steps of contacting the fluorogenic probes disclosed herein with the samples to form one or more fluorescent compounds, and measuring fluorescence properties of the fluorescent compounds. Provided also herein are high-throughput screening fluorescent methods for detecting or screening peroxynitrite or compounds that can increase or decrease the level of peroxynitrite or hypochlorite in chemical and biological samples.

    摘要翻译： 本文提供了可用作测量，检测和/或筛选ROS或RNS如过氧亚硝酸盐或次氯酸盐的试剂的化合物或荧光探针。 本文还提供了可用于直接或间接测量化学样品和生物样品中过氧亚硝酸盐或次氯酸盐的量的方法，例如活生物体中的细胞和组织。 具体地，所述方法包括使本文公开的荧光探针与样品接触以形成一种或多种荧光化合物并测量荧光化合物的荧光性质的步骤。 本文还提供了用于检测或筛选过氧亚硝酸盐或化合物的高通量筛选荧光方法，其可以增加或降低化学和生物样品中过氧亚硝酸盐或次氯酸盐的水平。