公开(公告)号：US20080268628A1

公开(公告)日：2008-10-30

申请号：US11739965

申请日：2007-04-25

申请人： Puneet Kohli ,  Manoj Mehrotra ,  Antonio Luis Pacheco Rotondaro ,  Stan Ashburn ,  Nandakumar Mahalingam ,  Amitabh Jain

发明人： Puneet Kohli ,  Manoj Mehrotra ,  Antonio Luis Pacheco Rotondaro ,  Stan Ashburn ,  Nandakumar Mahalingam ,  Amitabh Jain

IPC分类号： H01L21/425 ,  H01L29/00 ,  H01L21/22

CPC分类号： H01L21/26513 ,  H01L21/26506 ,  H01L29/66575

摘要： The disclosure relates to a method of forming an n-type doped active area on a semiconductor substrate that presents an improved placement profile. The method comprises the placement of arsenic in the presence of a carbon-containing arsenic diffusion suppressant in order to reduce the diffusion of the arsenic out of the target area during heat-induced annealing. The method may additionally include the placement of an amorphizer, such as germanium, in the target area in order to reduce channeling of the arsenic ions through the crystalline lattice. The method may also include the use of arsenic in addition to another n-type dopant, e.g. phosphorus, in order to offset some of the disadvantages of a pure arsenic dopant. The disclosure also relates to a semiconductor component, e.g. an NMOS transistor, formed in accordance with the described methods.

摘要翻译： 本公开涉及一种在半导体衬底上形成n型掺杂有源区的方法，该方法具有改善的放置曲线。 该方法包括在含碳的砷扩散抑制剂的存在下放置砷，以便在热诱导退火期间减少砷扩散到目标区域之外。 该方法可以另外包括在目标区域中放置诸如锗的非晶硅化合物，以便减少砷离子通过晶格的通道。 该方法还可以包括除了另一种n型掺杂剂之外使用砷，例如， 磷，以便抵消纯砷掺杂剂的一些缺点。 本公开还涉及半导体部件，例如， 一个根据所述方法形成的NMOS晶体管。

公开(公告)号：US07691700B2

公开(公告)日：2010-04-06

申请号：US11769058

申请日：2007-06-27

申请人： Manoj Mehrotra ,  Stan Ashburn ,  Shaoping Tang

发明人： Manoj Mehrotra ,  Stan Ashburn ,  Shaoping Tang

IPC分类号： H01L21/8238

CPC分类号： G11C11/412 ,  H01L21/26513 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/1083 ,  H01L29/7833

摘要： One aspect of the inventors' concept relates to a method of forming a semiconductor device. In this method, a gate structure is formed over a semiconductor body. A source/drain mask is patterned over the semiconductor body implanted source and drain regions are formed that are associated with the gate structure. After forming the implanted source and drain regions, a multi-stage implant is performed on the source and drain regions that comprises at least two implants where the dose and energy of the first implant varies from the dose and energy of the second implant. Other methods and devices are also disclosed.

摘要翻译： 本发明人的概念的一个方面涉及形成半导体器件的方法。 在该方法中，在半导体本体上形成栅极结构。 源极/漏极掩模在半导体本体注入源上形成图案，并且形成与栅极结构相关联的漏极区。 在形成植入的源区和漏区之后，在包括至少两个植入物的源极和漏极区域上执行多级注入，其中第一注入的剂量和能量与第二植入物的剂量和能量不同。 还公开了其它方法和装置。

公开(公告)号：US20090004803A1

公开(公告)日：2009-01-01

申请号：US11769058

申请日：2007-06-27

申请人： Manoj Mehrotra ,  Stan Ashburn ,  Shaoping Tang

发明人： Manoj Mehrotra ,  Stan Ashburn ,  Shaoping Tang

IPC分类号： G11C11/34 ,  H01L21/8238

CPC分类号： G11C11/412 ,  H01L21/26513 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/1083 ,  H01L29/7833

摘要： One aspect of the inventors' concept relates to a method of forming a semiconductor device. In this method, a gate structure is formed over a semiconductor body. A source/drain mask is patterned over the semiconductor body implanted source and drain regions are formed that are associated with the gate structure. After forming the implanted source and drain regions, a multi-stage implant is performed on the source and drain regions that comprises at least two implants where the dose and energy of the first implant varies from the dose and energy of the second implant. Other methods and devices are also disclosed.

摘要翻译： 本发明人的概念的一个方面涉及形成半导体器件的方法。 在该方法中，在半导体本体上形成栅极结构。 源极/漏极掩模在半导体本体注入源上形成图案，并且形成与栅极结构相关联的漏极区。 在形成植入的源区和漏区之后，在包括至少两个植入物的源极和漏极区域上执行多级注入，其中第一注入的剂量和能量与第二植入物的剂量和能量不同。 还公开了其它方法和装置。

公开(公告)号：US20080157292A1

公开(公告)日：2008-07-03

申请号：US11703452

申请日：2007-02-07

申请人： Manoj Mehrotra ,  Stan Ashburn

发明人： Manoj Mehrotra ,  Stan Ashburn

IPC分类号： H01L21/31 ,  H01L29/00

CPC分类号： H01L29/7843 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/3143 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/823807 ,  H01L29/66575

摘要： A method for manufacturing a semiconductor device featuring a high-stress dielectric layer is disclosed. The method involves the deposition of a comparatively thick liner layer that exerts increased strain on an underlying gate and active areas, resulting in enhanced carrier mobility through the transistor and heightened transistor performance. The method also involves the amelioration of fabrication problems that might arise from the deposition of a comparatively thick liner layer by forming such layer with at least a partially direction deposition process. Also disclosed are semiconductor devices manufactured in accordance with the disclosed methods.

摘要翻译： 公开了一种制造具有高应力电介质层的半导体器件的方法。 该方法涉及沉积相当厚的衬底层，其在下面的栅极和有源区上施加增加的应变，导致通过晶体管的增强的载流子迁移率和提高的晶体管性能。 该方法还涉及通过用至少部分方向沉积工艺形成这种层来改善可能由沉积较厚的衬层而产生的制造问题。 还公开了根据所公开的方法制造的半导体器件。

公开(公告)号：US09186173B2

公开(公告)日：2015-11-17

申请号：US13872856

申请日：2013-04-29

申请人： Alan Winfree ,  Stan Ashburn

发明人： Alan Winfree ,  Stan Ashburn

IPC分类号： A61B17/34 ,  A61B19/00 ,  A61B17/00 ,  A61B17/221

CPC分类号： A61B17/3417 ,  A61B90/361 ,  A61B2017/00907 ,  A61B2017/2217 ,  A61B2017/346

摘要： An optical obturator system is described. The optical obturator system includes a transparent window member provided on a distal tip portion of the obturator shaft, thus permitting the surgeon to visualize the tissue of the patient (e.g., via an imaging system positioned near the window member). One or more major portions of the optical obturator system may be formed of a biocompatible material, such as but not limited to stainless steel. Accordingly, the optical obturator system may be reusable for a relatively large number of surgical procedures.

摘要翻译： 描述了光闭塞系统。 光学闭塞器系统包括设置在闭孔轴的远端部分上的透明窗构件，从而允许外科医生将患者的组织（例如经由位于窗构件附近的成像系统）可视化。 光闭孔系统的一个或多个主要部分可以由生物相容性材料形成，例如但不限于不锈钢。 因此，光闭塞系统可以对于相对大量的外科手术可重复使用。

公开(公告)号：US08821526B2

公开(公告)日：2014-09-02

申请号：US13294474

申请日：2011-11-11

申请人： Alan Winfree ,  Stan Ashburn ,  Robert Henry

发明人： Alan Winfree ,  Stan Ashburn ,  Robert Henry

IPC分类号： A61B17/34

CPC分类号： A61B17/3421 ,  A61B2017/346

摘要： A trocar is described. The trocar is formed of a biocompatible material, such as but not limited to stainless steel. Accordingly, the trocar is reusable for a relatively large number of surgical procedures assuming conventional sterilization techniques are employed after each surgical procedure. Additionally, the trocar is provided with an angled blade design formed on a distal portion of the trocar shaft. More specifically, the blade design includes a first portion extending substantially co-planar to a proximal portion of the tip portion of the trocar shaft and a second portion extending angularly inwardly towards a distal portion of the tip portion of the trocar shaft.

摘要翻译： 描述了一种套管针 套针针由生物相容性材料形成，例如但不限于不锈钢。 因此，假设在每个外科手术之后采用常规的灭菌技术，套针针可以重复使用相对大量的外科手术。 此外，套针针设置有形成在套管针轴的远侧部分上的成角度的刀片设计。 更具体地，叶片设计包括基本上共面延伸到套管针轴的尖端部分的近端部分的第一部分和朝向套针针轴的尖端部分的远侧部分成角度地向内延伸的第二部分。

公开(公告)号：US20120123460A1

公开(公告)日：2012-05-17

申请号：US13294474

申请日：2011-11-11

申请人： ALAN WINFREE ,  Stan Ashburn ,  Robert Henry

发明人： ALAN WINFREE ,  Stan Ashburn ,  Robert Henry

IPC分类号： A61B17/34

CPC分类号： A61B17/3421 ,  A61B2017/346

摘要： A trocar is described. The trocar is formed of a biocompatible material, such as but not limited to stainless steel. Accordingly, the trocar is reusable for a relatively large number of surgical procedures assuming conventional sterilization techniques are employed after each surgical procedure. Additionally, the trocar is provided with an angled blade design formed on a distal portion of the trocar shaft. More specifically, the blade design includes a first portion extending substantially co-planar to a proximal portion of the tip portion of the trocar shaft and a second portion extending angularly inwardly towards a distal portion of the tip portion of the trocar shaft.

摘要翻译： 描述了一种套管针 套针针由生物相容性材料形成，例如但不限于不锈钢。 因此，假设在每个外科手术之后采用常规的灭菌技术，套针针可以重复使用相对大量的外科手术。 此外，套针针设置有形成在套管针轴的远侧部分上的成角度的刀片设计。 更具体地，叶片设计包括基本上共面延伸到套管针轴的尖端部分的近端部分的第一部分和朝向套针针轴的尖端部分的远侧部分成角度地向内延伸的第二部分。