公开(公告)号：US20230389430A1

公开(公告)日：2023-11-30

申请号：US18245099

申请日：2021-10-18

申请人： Qorvo Biotechnologies, LLC

发明人： Derya Deniz ,  John Belsick ,  Matthew Wasilik ,  Buu Quoc Diep

IPC分类号： H10N30/079 ,  H10N30/00

CPC分类号： H10N30/079 ,  H10N30/10516

摘要： Methods of depositing material onto substrate comprising: depositing a first seed material onto a wafer substrate, the wafer substrate having a face that defines a normal to the substrate, wherein the first seed material is deposited at a pressure of 10 to 20 mTorr to form a pre-seed layer on the wafer substrate, wherein the pre-seed layer has a surface roughness from 1 to 10 nm; depositing a second seed material onto at least a portion of the pre-seed layer at an off-normal incidence angle to form a seed layer on at least a portion of the pre-seed layer; and depositing a bulk piezoelectric material onto at least a portion of the seed layer to form a bulk piezoelectric layer having a c-axis tilt of 35 degrees or greater and a surface roughness of 4.5 nm or less. Structures and bulk acoustic wave resonators containing same are also included.

公开(公告)号：US20230257869A1

公开(公告)日：2023-08-17

申请号：US18013124

申请日：2020-10-22

申请人： QORVO BIOTECHNOLOGIES, LLC

发明人： Derya Deniz ,  Philip Johnston ,  Jay Helland ,  John Belsick ,  Kevin McCarron

IPC分类号： C23C14/56 ,  H03H3/02 ,  H03H9/17 ,  H01J37/34 ,  H01J37/32 ,  C23C14/54 ,  C23C14/50 ,  C23C14/35 ,  C23C14/02 ,  C23C14/22 ,  C30B23/00 ,  C30B23/06

CPC分类号： C23C14/566 ,  H03H3/02 ,  H03H9/173 ,  H03H9/175 ,  H01J37/3447 ,  H01J37/32899 ,  H01J37/32743 ,  H01J37/32458 ,  H01J37/3417 ,  H01J37/3405 ,  C23C14/568 ,  C23C14/541 ,  C23C14/50 ,  C23C14/35 ,  C23C14/02 ,  C23C14/225 ,  C30B23/005 ,  C30B23/063 ,  H03H2003/021 ,  H03H2003/025 ,  H01J2237/20285 ,  H01J2237/332 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/20235 ,  H01J2237/20214 ,  H01J2237/201 ,  H01J2237/2007 ,  H01J2237/0455

摘要： A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume in manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.