P-TYPE METAL-OXIDE-SEMICONDUCTOR (PMOS) LOW DROP-OUT (LDO) REGULATOR

    公开(公告)号:US20210072778A1

    公开(公告)日:2021-03-11

    申请号:US16561839

    申请日:2019-09-05

    Abstract: Certain aspects of the present disclosure provide a low drop-out (LDO) regulator. The LDO regulator generally includes a first p-type metal-oxide-semiconductor transistor (PMOS) having a drain coupled to an output node of the LDO regulator, a first amplifier having an input coupled to a reference voltage node and an output coupled to a gate of the first PMOS transistor, a second PMOS transistor having a source coupled to the output node, and a second amplifier having an input coupled to the output node and an output coupled to a gate of the second PMOS transistor.

    SYSTEM AND METHOD FOR REDUCING CURRENT NOISE IN A VCO AND BUFFER

    公开(公告)号:US20200091866A1

    公开(公告)日:2020-03-19

    申请号:US16132731

    申请日:2018-09-17

    Abstract: A voltage controlled oscillator (VCO) and buffer circuit includes a voltage controlled oscillator (VCO), a buffer circuit configured to receive a signal generated by the VCO, the buffer circuit comprising a first transistor having a parasitic gate-source capacitance (Cgs), and a second transistor coupled across the first transistor, wherein a gate of the first transistor is coupled to a drain and a source of the second transistor, and a gate of the second transistor is coupled to a source of the first transistor.

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