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公开(公告)号:US11703578B2
公开(公告)日:2023-07-18
申请号:US17663357
申请日:2022-05-13
Applicant: QUALCOMM Incorporated
Inventor: Yipeng Lu , Hrishikesh Vijaykumar Panchawagh , Jessica Liu Strohmann , Kostadin Dimitrov Djordjev
CPC classification number: G01S7/5205 , G06F3/0418 , G06V40/1306 , G06F3/044
Abstract: Techniques for operating an ultrasonic sensor array, the ultrasonic sensor array disposed under a platen, include making a determination whether or not to recalibrate the ultrasonic sensor array based on whether a first screen protector disposed above the platen has been removed or replaced by a second screen protector; and recalibrating the ultrasonic sensor array, when the determination is to recalibrate the ultrasonic sensor array. In some cases, the techniques include prompting a user to indicate whether or not the screen protector has been changed or removed, and recalibrating the ultrasonic sensor array only after confirmation from the user.
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公开(公告)号:US11346927B2
公开(公告)日:2022-05-31
申请号:US16414164
申请日:2019-05-16
Applicant: Qualcomm Incorporated
Inventor: Yipeng Lu , Hrishikesh Vijaykumar Panchawagh , Jessica Liu Strohmann , Kostadin Dimitrov Djordjev
Abstract: Techniques for operating an ultrasonic sensor array, the ultrasonic sensor array disposed under a platen, include: making a determination whether or not to recalibrate the ultrasonic sensor array based on whether a first screen protector disposed above the platen has been removed or replaced by a second screen protector; and recalibrating the ultrasonic sensor array, when the determination is to recalibrate the ultrasonic sensor array. In some cases, the techniques include prompting a user to indicate whether or not the screen protector has been changed or removed, and recalibrating the ultrasonic sensor array only after confirmation from the user.
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公开(公告)号:US20220004728A1
公开(公告)日:2022-01-06
申请号:US16946717
申请日:2020-07-01
Applicant: QUALCOMM Incorporated
Inventor: Jessica Liu Strohmann , Hrishikesh Vijaykumar Panchawagh , Nicholas Ian Buchan , Yipeng Lu , Kostadin Dimitrov Djordjev
Abstract: An ultrasonic sensor system may include an ultrasonic transceiver layer, a thin-film transistor (TFT) layer proximate a first side of the ultrasonic transceiver layer, a frequency-splitting layer proximate a second side of the ultrasonic transceiver layer and a high-impedance layer proximate the frequency-splitting layer. The frequency-splitting layer may reside between the ultrasonic transceiver layer and the high-impedance layer. The high-impedance layer may have a higher acoustic impedance than the frequency-splitting layer.
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公开(公告)号:US11087108B2
公开(公告)日:2021-08-10
申请号:US16691416
申请日:2019-11-21
Applicant: QUALCOMM Incorporated
Inventor: Jack Conway Kitchens , John Keith Schneider , Stephen Michael Gojevic , Evan Michael Breloff , James Anthony Miranto , Emily Kathryn Brooks , Fitzgerald John Archibald , Alexei Stoianov , Raj Kumar , Sai Praneeth Sreeram , Nirma Lnu , Sandeep Louis D'Souza , Nicholas Ian Buchan , Yipeng Lu , Chin-Jen Tseng , Hrishikesh Vijaykumar Panchawagh
Abstract: An apparatus may include a cover layer, a layer of first metamaterial proximate (or in) the cover layer, a light source system configured for providing light to the layer of first metamaterial and a receiver system. The first metamaterial may include nanoparticles configured to create ultrasonic waves when illuminated by light. The receiver system may include an ultrasonic receiver system configured to receive ultrasonic waves reflected from a target object in contact with, or proximate, a surface of the cover layer. The control system may be configured to receive ultrasonic receiver signals from the ultrasonic receiver system corresponding to the ultrasonic waves reflected from the target object and to perform an authentication process and/or an imaging process that is based, at least in part, on the ultrasonic receiver signals.
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公开(公告)号:US20200234021A1
公开(公告)日:2020-07-23
申请号:US16252408
申请日:2019-01-18
Applicant: QUALCOMM Incorporated
Inventor: Yipeng Lu , Hrishikesh Vijaykumar Panchawagh , Kostadin Dimitrov Djordjev , Chin-Jen Tseng , Nicholas Ian Buchan , Tsongming Kao , Jae Hyeong Seo
IPC: G06K9/00
Abstract: An ultrasonic fingerprint sensor system of the present disclosure may be provided with a thick electrically nonconductive acoustic layer and thin electrode layer coupled to a piezoelectric layer of an ultrasonic transmitter or transceiver. The thick electrically nonconductive acoustic layer may have a high density or high acoustic impedance value, and may be adjacent to the piezoelectric layer. The thin electrode layer may be divided into electrode segments. The ultrasonic fingerprint sensor system may use flexible or rigid substrates, and may use an ultrasonic transceiver or an ultrasonic transmitter separate from an ultrasonic receiver.
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公开(公告)号:US10438040B2
公开(公告)日:2019-10-08
申请号:US15469313
申请日:2017-03-24
Applicant: QUALCOMM Incorporated
Inventor: Jessica Liu Strohmann , Yair Karmi , Yipeng Lu , Hrishikesh Vijaykumar Panchawagh , David William Burns
IPC: G06K9/00 , G06F3/0338 , G06F3/0354
Abstract: Some disclosed methods involve controlling an ultrasonic sensor system to transmit ultrasonic waves and receiving signals from the ultrasonic sensor system corresponding to ultrasonic waves reflected from a finger positioned on a platen. The methods may involve obtaining fingerprint image data corresponding to the signals and determining a change in a force of at least a portion of the finger on the platen corresponding to the signals.
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公开(公告)号:US20190220642A1
公开(公告)日:2019-07-18
申请号:US16367052
申请日:2019-03-27
Applicant: QUALCOMM Incorporated
Inventor: Yipeng Lu , David William Burns
CPC classification number: G06K9/0002 , A61B5/0095 , A61B5/14532 , A61B5/14542 , A61B5/14546 , A61B5/6898 , A61B5/7225 , A61B2562/0204 , A61B2562/0242 , G06K9/00093 , G06K9/00107 , G06K9/00201 , G06K9/4638 , G06K2009/00932
Abstract: An apparatus may include an ultrasonic sensor array, a light source system and a control system. Some implementations may include an ultrasonic transmitter. The control system may be operatively configured to control the light source system to emit light that induces acoustic wave emissions inside a target object. The control system may be operatively configured to select a first acquisition time delay for the reception of acoustic wave emissions primarily from a first depth inside the target object. The control system may be operatively configured to acquire first ultrasonic image data from the acoustic wave emissions received by the ultrasonic sensor array during a first acquisition time window. The first acquisition time window may be initiated at an end time of the first acquisition time delay.
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公开(公告)号:US20160107194A1
公开(公告)日:2016-04-21
申请号:US14883583
申请日:2015-10-14
Applicant: QUALCOMM Incorporated
Inventor: Hrishikesh Vijaykumar Panchawagh , Hao-Yen Tang , Yipeng Lu , Kostadin Dimitrov Djordjev , Suryaprakash Ganti , David William Burns , Ravindra Vaman Shenoy , Jon Bradley Lasiter , Nai-Kuei Kuo , Firas Sammoura
IPC: B06B1/06 , H01L41/047 , H01L41/053 , H01L41/04
CPC classification number: G01S7/5208 , B06B1/0207 , B06B1/0607 , B06B1/0644 , B06B1/0666 , B06B2201/20 , B06B2201/55 , G01S7/521 , G01S15/04 , G01S15/89 , G01S15/8915 , G06F3/0412 , G06F3/0416 , G06F3/043 , G06F3/0436 , G06F2203/04101 , G06K9/0002 , G06K9/00335 , G10K11/26 , G10K11/34 , G10K11/341 , G10K11/346 , H01L41/047 , H01L41/08
Abstract: A piezoelectric micromechanical ultrasonic transducer (PMUT) includes a diaphragm disposed over a cavity, the diaphragm including a piezoelectric layer stack including a piezoelectric layer, a first electrode electrically coupled with transceiver circuitry, and a second electrode electrically coupled with the transceiver circuitry. The first electrode may be disposed in a first portion of the diaphragm, and the second electrode may be disposed in a second, separate, portion of the diaphragm. Each of the first and the second electrode is disposed on or proximate to a first surface of the piezoelectric layer, the first surface being opposite from the cavity. The PMUT is configured to transmit first ultrasonic signals by way of the first electrode during a first time period and to receive second ultrasonic signals by way of the second electrode during a second time period, the first time period and the second time period being at least partially overlapping.
Abstract translation: 压电微机械超声换能器(PMUT)包括设置在空腔上方的隔膜,所述隔膜包括压电层堆叠,所述压电层堆叠包括压电层,与收发器电路电耦合的第一电极和与所述收发器电路电耦合的第二电极。 第一电极可以设置在隔膜的第一部分中,并且第二电极可以设置在隔膜的第二,分离的部分中。 第一和第二电极中的每一个设置在压电层的第一表面上或其附近,第一表面与空腔相对。 PMUT被配置为在第一时间段期间通过第一电极传输第一超声波信号,并且在第二时间段期间通过第二电极接收第二超声波信号,第一时间段和第二时间段至少是 部分重叠。
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公开(公告)号:US11798308B2
公开(公告)日:2023-10-24
申请号:US17448037
申请日:2021-09-17
Applicant: QUALCOMM Incorporated
Inventor: Jessica Liu Strohmann , Hrishikesh Vijaykumar Panchawagh , Nai-Kuei Kuo , Yipeng Lu , Ali Lopez , Kostadin Dimitrov Djordjev
CPC classification number: G06V40/1306 , B06B1/0688 , H10K59/65 , B06B2201/70
Abstract: Some disclosed implementations include an ultrasonic sensor stack and an acoustic resonator. The acoustic resonator may be configured to enhance ultrasonic waves transmitted by the ultrasonic sensor stack in an ultrasonic frequency range that is suitable for ultrasonic fingerprint sensors. In some examples, the acoustic resonator may include one or more low-impedance layers residing between a first higher-impedance layer and a second higher-impedance layer. Each of the one or more low-impedance layers may have a lower acoustic impedance than an acoustic impedance of the first higher-impedance layer or an acoustic impedance of the second higher-impedance layer. At least one low-impedance layer may have a thickness corresponding to a multiple of a half wavelength at a peak frequency of the acoustic resonator. The peak frequency may be within a frequency range from 1 MHz. to 20 MHz.
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公开(公告)号:US11436857B1
公开(公告)日:2022-09-06
申请号:US17446438
申请日:2021-08-30
Applicant: QUALCOMM Incorporated
Inventor: Jessica Liu Strohmann , Yipeng Lu , Hrishikesh Vijaykumar Panchawagh , Kostadin Dimitrov Djordjev
Abstract: An apparatus may include an ultrasonic sensor system having an ultrasonic transceiver layer, a thin-film transistor (TFT) layer and a frequency-differentiating layer. In some examples, the frequency-differentiating layer may include a first frequency-differentiating layer area corresponding to a lower-frequency area of the ultrasonic sensor system. The first frequency-differentiating layer area may include a first material having a first acoustic impedance. In some such examples, the frequency-differentiating layer may include a second frequency-differentiating layer area corresponding to a higher-frequency area of the ultrasonic sensor system. The second frequency-differentiating layer area may include a second material having a second acoustic impedance. The first acoustic impedance may, for example, be higher than the second acoustic impedance.
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