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    Biasing for tri-layer magnetoresistive sensors
    3.
    发明授权
    Biasing for tri-layer magnetoresistive sensors 有权
    三层磁阻传感器的偏置

    公开(公告)号：US07177122B2

    公开(公告)日：2007-02-13

    申请号：US10694483

    申请日：2003-10-27

    申请人： Chunhong Hou ,  Sining Mao ,  Eric S. Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric W. Singleton ,  Song S. Xue

    发明人： Chunhong Hou ,  Sining Mao ,  Eric S. Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric W. Singleton ,  Song S. Xue

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  G11B5/3909 ,  G11B2005/0018 ,  G11B2005/3996

    摘要： A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.

    摘要翻译： 公开了一种用于三层读取器堆叠磁阻传感器的偏置系统。 三层读取器堆叠包括第一铁磁自由层，第二铁磁自由层和在第一和第二铁磁性自由层之间的磁阻层。 自由层位于三层读取器堆叠中，使得自由层的静态状态磁化反平行。 偏置层相对于三层读取器堆叠定位，通常通过非磁性间隔层与三层读取器堆叠分离。 偏置装置被定位成使得偏置层的磁化垂直于自由层的静态状态磁化。 该偏置导致自由层具有相对于彼此基本上正交的偏磁化。

    Mag-tab design for biasing magnetic sensors
    7.
    发明授权
    Mag-tab design for biasing magnetic sensors 失效
    Mag-tab设计用于偏置磁性传感器

    公开(公告)号：US07016166B1

    公开(公告)日：2006-03-21

    申请号：US10406172

    申请日：2003-04-03

    申请人： Chunhong Hou ,  Xuefei Tang ,  Qing He ,  Lei Wang

    发明人： Chunhong Hou ,  Xuefei Tang ,  Qing He ,  Lei Wang

    IPC分类号： G11B5/127

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3932 ,  G11B2005/3996

    摘要： A structure for stabilizing the active region of the magnetic sensor comprises a hard ferromagnetic element adjacent to a biasing multilayer element placed on either side of the active region of the magnetic sensor. The biasing multilayer element includes soft ferromagnetic and anti-ferromagnetic layers such that the biasing strength applied to the active region of the magnetic sensor is tuneable by adjusting the length of the soft ferromagnetic layer or layers as well as the insertion of spacer layers between the soft ferromagnetic materials and the anti-ferromagnetic layers. The inventive structure provides longitudinal bias to the active region with improved domain control, signal amplitude and side-reading properties.

    摘要翻译： 用于稳定磁传感器的有源区域的结构包括与置于磁传感器的有源区域的任一侧上的偏置多层元件相邻的硬铁磁元件。 偏置多层元件包括软铁磁和反铁磁层，使得施加到磁传感器的有源区的偏置强度可通过调节软铁磁层的长度以及在柔软的铁磁层之间插入间隔层 铁磁材料和反铁磁层。 本发明的结构提供了有源区域的纵向偏置，具有改进的域控制，信号幅度和侧读特性。

    Biasing for tri-layer magnetoresistive sensors
    8.
    发明申请
    Biasing for tri-layer magnetoresistive sensors 有权
    三层磁阻传感器的偏置

    公开(公告)号：US20050088789A1

    公开(公告)日：2005-04-28

    申请号：US10694483

    申请日：2003-10-27

    申请人： Chunhong Hou ,  Sining Mao ,  Eric Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric Singleton ,  Song Xue

    发明人： Chunhong Hou ,  Sining Mao ,  Eric Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric Singleton ,  Song Xue

    IPC分类号： G11B5/127 ,  G11B5/39

    CPC分类号： G11B5/3932 ,  G11B5/3909 ,  G11B2005/0018 ,  G11B2005/3996

    摘要： A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.

    摘要翻译： 公开了一种用于三层读取器堆叠磁阻传感器的偏置系统。 三层读取器堆叠包括第一铁磁自由层，第二铁磁自由层和在第一和第二铁磁性自由层之间的磁阻层。 自由层位于三层读取器堆叠中，使得自由层的静态状态磁化反平行。 偏置层相对于三层读取器堆叠定位，通常通过非磁性间隔层与三层读取器堆叠分离。 偏置装置被定位成使得偏置层的磁化垂直于自由层的静态状态磁化。 该偏置导致自由层具有相对于彼此基本上正交的偏磁化。

    Double bias for a magnetic reader
    9.
    发明申请
    Double bias for a magnetic reader 审中-公开
    磁读取器的双重偏置

    公开(公告)号：US20070091675A1

    公开(公告)日：2007-04-26

    申请号：US11254283

    申请日：2005-10-20

    申请人： Chunhong Hou ,  Qing He ,  Xuefei Tang

    发明人： Chunhong Hou ,  Qing He ,  Xuefei Tang

    IPC分类号： G11C11/15

    CPC分类号： G11C11/16

    摘要： The present invention provides a tunneling giant magnetoresistance (TGMR) sensor. The sensor including an active region. The active region having a first bias layer. The sensor also including a passive region. The passive region has an insulating layer and a second bias layer. Furthermore, the insulating layer is positioned between the active region and the second bias layer.

    摘要翻译： 本发明提供一种隧道式巨磁阻（TGMR）传感器。 传感器包括有源区域。 有源区具有第一偏置层。 传感器还包括被动区域。 无源区具有绝缘层和第二偏置层。 此外，绝缘层位于有源区和第二偏压层之间。