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64 条记录 (耗时 0.03 秒)

    Biasing for tri-layer magnetoresistive sensors
    1.
    发明申请
    Biasing for tri-layer magnetoresistive sensors 有权
    三层磁阻传感器的偏置

    公开(公告)号：US20050088789A1

    公开(公告)日：2005-04-28

    申请号：US10694483

    申请日：2003-10-27

    申请人： Chunhong Hou ,  Sining Mao ,  Eric Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric Singleton ,  Song Xue

    发明人： Chunhong Hou ,  Sining Mao ,  Eric Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric Singleton ,  Song Xue

    IPC分类号： G11B5/127 ,  G11B5/39

    CPC分类号： G11B5/3932 ,  G11B5/3909 ,  G11B2005/0018 ,  G11B2005/3996

    摘要： A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.

    摘要翻译： 公开了一种用于三层读取器堆叠磁阻传感器的偏置系统。 三层读取器堆叠包括第一铁磁自由层，第二铁磁自由层和在第一和第二铁磁性自由层之间的磁阻层。 自由层位于三层读取器堆叠中，使得自由层的静态状态磁化反平行。 偏置层相对于三层读取器堆叠定位，通常通过非磁性间隔层与三层读取器堆叠分离。 偏置装置被定位成使得偏置层的磁化垂直于自由层的静态状态磁化。 该偏置导致自由层具有相对于彼此基本上正交的偏磁化。

    Laminated return pole for suppressing side track erasure
    3.
    发明申请
    Laminated return pole for suppressing side track erasure 有权
    用于抑制侧轨道擦除的层压返回杆

    公开(公告)号：US20070097546A1

    公开(公告)日：2007-05-03

    申请号：US11262198

    申请日：2005-10-28

    申请人： Shaoping Li ,  Lei Wang ,  Chunhong Hou ,  Song Xue ,  Daniel Brown

    发明人： Shaoping Li ,  Lei Wang ,  Chunhong Hou ,  Song Xue ,  Daniel Brown

    IPC分类号： G11B5/127

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3146

    摘要： A perpendicular writer includes a surface, a main pole proximate the surface, a return pole proximate the surface, and a back yoke connecting the main pole to the return pole distal the surface. The return pole is configured such that a magnetization of a portion of the return pole adjacent the surface is held substantially parallel to the surface during a write operation.

    摘要翻译： 垂直刻录机包括表面，靠近表面的主极，靠近表面的返回极，以及将主极连接到远离表面的返回极的后轭。 返回极被配置为使得在写入操作期间，邻近表面的返回极的部分的磁化基本上平行于表面。

    NON-VOLATILE PROGRAMMABLE LOGIC GATES AND ADDERS
    6.
    发明申请
    NON-VOLATILE PROGRAMMABLE LOGIC GATES AND ADDERS 有权
    非易失性可编程逻辑门和插件

    公开(公告)号：US20110068825A1

    公开(公告)日：2011-03-24

    申请号：US12953544

    申请日：2010-11-24

    申请人： Haiwen Xi ,  Yang Li ,  Song Xue

    发明人： Haiwen Xi ,  Yang Li ,  Song Xue

    IPC分类号： H03K19/168 ,  H01L29/82

    CPC分类号： H03K19/173 ,  G11C11/161 ,  G11C11/1673

    摘要： Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and the output element includes a free layer that is electrically connected to the free layer of the input element. The free layers of the input element and the output element may be electrically connected via magnetostatic coupling, or may be physically coupled. In some embodiments, the output element may have more than one free layer.

    摘要翻译： 具有至少一个输入元件和输出元件的自旋扭矩磁逻辑器件。 通过输入元件施加电流，并测量输出元件两端产生的电阻或电压。 输入元件包括自由层，并且输出元件包括电连接到输入元件的自由层的自由层。 输入元件和输出元件的自由层可以通过静磁耦合电连接，或者可以物理耦合。 在一些实施例中，输出元件可以具有多于一个的自由层。

    Bad Pixel Detection and Correction
    8.
    发明申请
    Bad Pixel Detection and Correction 审中-公开
    坏像素检测和校正

    公开(公告)号：US20100141810A1

    公开(公告)日：2010-06-10

    申请号：US12328138

    申请日：2008-12-04

    申请人： LinCheng Wang ,  ChengLun Chang ,  Song Xue

    发明人： LinCheng Wang ,  ChengLun Chang ,  Song Xue

    IPC分类号： H04N9/64

    CPC分类号： H04N5/3675

    摘要： The invention relates to a method for bad pixel classification for an image sensor having a plurality of sensing elements. The method includes capturing a plurality of images using the image sensor, determining based on a pre-determined criterion, using an image of the plurality of images and a threshold value selected from one or more pre-determined threshold values, whether a sensing element in the image sensor is defective to generate a vote, wherein a threshold parameter associated with the pre-determined criterion is set to the threshold value, tallying the vote to generate a voting count by performing iterations of the determining step using different images of the plurality of images and different threshold values of the one or more pre-determined threshold values, and classifying the sensing element as a bad pixel if the voting count exceeds a pre-determined classification threshold.

    摘要翻译： 本发明涉及一种具有多个传感元件的图像传感器的不良像素分类方法。 该方法包括使用图像传感器捕获多个图像，使用多个图像的图像和从一个或多个预定阈值中选择的阈值，基于预定准则来确定多个图像中的感测元件 所述图像传感器有缺陷以产生投票，其中将与所述预定标准相关联的阈值参数设置为所述阈值，通过使用所述多个图像的不同图像执行所述确定步骤的迭代来计算投票以产生投票计数 图像和一个或多个预定阈值的不同阈值，并且如果投票计数超过预定分类阈值，则将感测元件分类为不良像素。

    Non-Volatile Memory Cell with Ferroelectric Layer Configurations
    9.
    发明申请
    Non-Volatile Memory Cell with Ferroelectric Layer Configurations 审中-公开
    具有铁电层配置的非易失性存储单元

    公开(公告)号：US20100135061A1

    公开(公告)日：2010-06-03

    申请号：US12326714

    申请日：2008-12-02

    申请人： Shaoping Li ,  Kaizhong Gao ,  Insik Jin ,  Song Xue ,  Haiwen Xi ,  Zheng Gao ,  Eileen Yan

    发明人： Shaoping Li ,  Kaizhong Gao ,  Insik Jin ,  Song Xue ,  Haiwen Xi ,  Zheng Gao ,  Eileen Yan

    IPC分类号： G11C11/22 ,  H01L29/68

    CPC分类号： G11C11/22 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147

    摘要： In some embodiments of the invention a non-volatile memory cell is provided with a first electrode, a second electrode, and one or more side layers of a ferroelectric metal oxide and a ferroelectric material layer between the first and second electrodes. The ferroelectric material layer may be provided between, e.g., adjacent, two side layers of a ferroelectric metal oxide or between a single layer of a ferroelectric metal oxide and an electrode. The ferroelectric metal oxide may in some cases include a uniform layered structure such as a bismuth layer-structured ferroelectric material like Bi4Ti3O12. In some embodiments, the ferroelectric material layer is formed at least partially from PbZrxTi1-xO3. A non-volatile memory array including such memory cells is also provided.

    摘要翻译： 在本发明的一些实施例中，非易失性存储单元在第一和第二电极之间设置有第一电极，第二电极以及铁电金属氧化物和铁电材料层的一个或多个侧层。 铁电材料层可以设置在例如铁电金属氧化物的相邻的两个侧层之间或者设置在单层铁电金属氧化物和电极之间。 在一些情况下，铁电金属氧化物可以包括均匀的层状结构，例如诸如Bi 4 Ti 3 O 12的铋层结构的铁电材料。 在一些实施例中，铁电材料层至少部分地由PbZrxTi1-xO3形成。 还提供了包括这种存储单元的非易失性存储器阵列。