公开(公告)号：US08907666B2

公开(公告)日：2014-12-09

申请号：US13251100

申请日：2011-09-30

申请人： Quang Le ,  Simon H. Liao ,  Shuxia Wang ,  Guangli Liu ,  Yongchul Ahn

发明人： Quang Le ,  Simon H. Liao ,  Shuxia Wang ,  Guangli Liu ,  Yongchul Ahn

IPC分类号： G01R33/02 ,  G01R33/00 ,  G01R33/09

CPC分类号： G01R33/0011 ,  G01R33/0017 ,  G01R33/093

摘要： A scissor style magnetic sensor having a novel hard bias structure for improved magnetic biasing robustness. The sensor includes a sensor stack that includes first and second magnetic layers separated by a non-magnetic layer such as an electrically insulating barrier layer or an electrically conductive spacer layer. The first and second magnetic layers have magnetizations that are antiparallel coupled, but that are canted in a direction that is neither parallel with nor perpendicular to the air bearing surface by a magnetic bias structure. The magnetic bias structure includes a neck portion extending from the back edge of the sensor stack and having first and second sides that are aligned with first and second sides of the sensor stack. The bias structure also includes a tapered or wedged portion extending backward from the neck portion.

摘要翻译： 具有改进的磁偏置鲁棒性的新型硬偏置结构的剪刀式磁传感器。 该传感器包括传感器堆叠，该传感器堆叠包括由诸如电绝缘阻挡层或导电隔离层之类的非磁性层分开的第一和第二磁性层。 第一和第二磁性层具有反平行耦合的磁化，但是通过磁偏置结构在不与空气轴承表面平行或垂直的方向上倾斜。 磁偏置结构包括从传感器堆叠的后边缘延伸的颈部，并且具有与传感器堆叠的第一和第二侧对准的第一和第二侧。 偏置结构还包括从颈部部分向后延伸的锥形或楔形部分。

公开(公告)号：US20130082696A1

公开(公告)日：2013-04-04

申请号：US13251100

申请日：2011-09-30

申请人： Quang Le ,  Simon H. Liao ,  Shuxia Wang ,  Guangli Liu ,  Yongchul Ahn

发明人： Quang Le ,  Simon H. Liao ,  Shuxia Wang ,  Guangli Liu ,  Yongchul Ahn

IPC分类号： G01R33/02 ,  C23F1/04

CPC分类号： G01R33/0011 ,  G01R33/0017 ,  G01R33/093

摘要： A scissor style magnetic sensor having a novel hard bias structure for improved magnetic biasing robustness. The sensor includes a sensor stack that includes first and second magnetic layers separated by a non-magnetic layer such as an electrically insulating barrier layer or an electrically conductive spacer layer. The first and second magnetic layers have magnetizations that are antiparallel coupled, but that are canted in a direction that is neither parallel with nor perpendicular to the air bearing surface by a magnetic bias stricture. The magnetic bias structure includes a neck portion extending from the back edge of the sensor stack and having first and second sides that are aligned with first and second sides of the sensor stack. The bias structure also includes a tapered or wedged portion extending backward from the neck portion.

摘要翻译： 具有改进的磁偏置鲁棒性的新型硬偏置结构的剪刀式磁传感器。 该传感器包括传感器堆叠，该传感器堆叠包括由诸如电绝缘阻挡层或导电隔离层之类的非磁性层分开的第一和第二磁性层。 第一和第二磁性层具有反平行耦合的磁化，但是通过磁偏置狭窄不能平行于或垂直于空气轴承表面的方向倾斜。 磁偏置结构包括从传感器堆叠的后边缘延伸的颈部，并且具有与传感器堆叠的第一和第二侧对准的第一和第二侧。 偏置结构还包括从颈部部分向后延伸的锥形或楔形部分。

公开(公告)号：US20130083432A1

公开(公告)日：2013-04-04

申请号：US13249076

申请日：2011-09-29

申请人： Quang Le ,  Simon H. Liao ,  Shuxia Wang ,  Guangli Liu ,  Yongchul Ahn

发明人： Quang Le ,  Simon H. Liao ,  Shuxia Wang ,  Guangli Liu ,  Yongchul Ahn

IPC分类号： G11B5/60 ,  G11B5/127

CPC分类号： G11B5/3163 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/398 ,  Y10T29/49048

摘要： A magnetic read head having a hard bias structure that both optimizes magnetic bias field and also ensures manufacturability while maintaining sensor stripe height integrity. The read head includes a sensor stack having a back edge and first and second laterally opposed sides. A hard bias structure extending from each of the first and second sides of the sensor stack has a neck portion located near the sensor and having a back edge that is aligned with and parallel to the back edge of the sensor stack. The hard bias structure also includes a flared portion having a back edge that defines an angle relative to the air bearing surface of the read head. The back edge preferably defines and angle of 45-75 degrees relative to the air bearing surface.

摘要翻译： 具有硬偏置结构的磁读头，其既优化磁偏置场，又确保可制造性，同时保持传感器条高度的完整性。 读头包括具有后边缘和第一和第二横向相对侧的传感器堆叠。 从传感器堆叠的第一和第二侧的每一个延伸的硬偏压结构具有位于传感器附近的颈部，并且具有与传感器堆叠的后边缘对准并平行的后边缘。 硬偏置结构还包括具有相对于读头的空气支承表面限定角度的后边缘的扩口部分。 后边缘优选地限定相对于空气轴承表面45-75度的角度。

公开(公告)号：US08797694B2

公开(公告)日：2014-08-05

申请号：US13335589

申请日：2011-12-22

申请人： Quang Le ,  David J. Seagle ,  Guangli Liu ,  Yongchul Ahn ,  Simon H. Liao

发明人： Quang Le ,  David J. Seagle ,  Guangli Liu ,  Yongchul Ahn ,  Simon H. Liao

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetic read sensor having a hard bias structure that extends beyond the back edge of the sensor stack by a controlled, distance that is chosen to maximize both hard bias field and hard bias magnetic coercivity and anisotropy. The hard bias structure has a back edge that is well defined and that has a square corner at its innermost end adjacent to the sensor stack. The magnetic sensor can be constructed by a process that includes a separate making an milling process that is dedicated to defining the back edge of the hard bias structure.

摘要翻译： 具有硬偏压结构的磁读取传感器，其通过受控的距离延伸超过传感器堆叠的后边缘，该距离被选择为最大化硬偏置磁场和硬偏磁磁矫顽力和各向异性。 硬偏置结构具有良好限定的后边缘，并且在与传感器堆叠相邻的最内端具有正方形角。 磁传感器可以通过包括单独制造专用于限定硬偏压结构的后边缘的铣削过程的工艺来构造。

公开(公告)号：US20130163121A1

公开(公告)日：2013-06-27

申请号：US13335589

申请日：2011-12-22

申请人： Quang Le ,  David J. Seagle ,  Guangli Liu ,  Yongchul Ahn ,  Simon H. Liao

发明人： Quang Le ,  David J. Seagle ,  Guangli Liu ,  Yongchul Ahn ,  Simon H. Liao

IPC分类号： G11B5/60 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetic read sensor having a hard bias structure that extends beyond the back edge of the sensor stack by a controlled, distance that is chosen to maximize both hard bias field and hard bias magnetic coercivity and anisotropy. The hard bias structure has a back edge that is well defined and that has a square corner at its innermost end adjacent to the sensor stack. The magnetic sensor can be constructed by a process that includes a separate making an milling process that is dedicated to defining the back edge of the hard bias structure.

摘要翻译： 具有硬偏压结构的磁读取传感器，其通过受控的距离延伸超过传感器堆叠的后边缘，该距离被选择为最大化硬偏置磁场和硬偏磁磁矫顽力和各向异性。 硬偏置结构具有良好限定的后边缘，并且在与传感器堆叠相邻的最内端具有正方形角。 磁传感器可以通过包括单独制造专用于限定硬偏压结构的后边缘的铣削过程的工艺来构造。

公开(公告)号：US20120231296A1

公开(公告)日：2012-09-13

申请号：US13045724

申请日：2011-03-11

申请人： Quang Le ,  Jui-Lung Li ,  Yongchul Ahn ,  Simon H. Liao ,  Guangli Liu ,  Masaya Nishioka

发明人： Quang Le ,  Jui-Lung Li ,  Yongchul Ahn ,  Simon H. Liao ,  Guangli Liu ,  Masaya Nishioka

IPC分类号： G11B5/33 ,  B44C1/22

CPC分类号： G11B5/398 ,  G01R33/0052 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  H01L43/08 ,  H01L43/12

摘要： A method for manufacturing a magnetic sensor that minimizes topography resulting from stripe height defining masking and patterning in order to facilitate definition of track width. The method includes depositing a series of mask layers and then masking and ion milling the series of sensor layers to define a back edge of a sensor. A non-magnetic fill layer is then deposited, the magnetic fill layer being constructed of a material that has an ion mill rate that is similar to that of the series of sensor layers. A second masking and milling process is then performed to define the track width of the sensor and hard bias is deposited. Because the non-magnetic fill layer is removed at substantially the same rate as the sensor material the structure has a very flat topography on which to form the sensor track width.

摘要翻译： 一种用于制造磁传感器的方法，其使由限定掩模和图案化的条纹高度导致的形貌最小化，以便于轨道宽度的定义。 该方法包括沉积一系列掩模层，然后掩蔽和离子铣削该系列传感器层以限定传感器的后边缘。 然后沉积非磁性填充层，磁性填充层由具有类似于该系列传感器层的离子磨机速率的材料构成。 然后执行第二掩蔽和铣削过程以限定传感器的轨道宽度，并且沉积硬偏置。 由于非磁性填充层以与传感器材料基本相同的速率被去除，所以结构具有非常平坦的形状，以形成传感器轨道宽度。

公开(公告)号：US20130135772A1

公开(公告)日：2013-05-30

申请号：US13306887

申请日：2011-11-29

申请人： Yongchul Ahn ,  Xiaozhong Dang ,  Quang Le ,  Simon H. Liao

发明人： Yongchul Ahn ,  Xiaozhong Dang ,  Quang Le ,  Simon H. Liao

IPC分类号： G11B5/127 ,  C23F1/04

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3193 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for manufacturing a magnetic sensor that includes depositing a plurality of mask layers, then forming a stripe height defining mask over the sensor layers. A first ion milling is performed just sufficiently to remove portions of the free layer that are not protected by the stripe height defining mask, the first ion milling being terminated at the non-magnetic barrier or spacer layer. A dielectric layer is then deposited, preferably by ion beam deposition. A second ion milling is then performed to remove portions of the pinned layer structure that are not protected by the mask, the free layer being protected during the second ion milling by the dielectric layer.

摘要翻译： 一种用于制造磁传感器的方法，包括沉积多个掩模层，然后在传感器层上形成条纹高度限定掩模。 执行第一离子铣削足以除去未被条形高度限定掩模保护的自由层的部分，第一离子铣削在非磁性阻挡层或间隔层处终止。 然后优选通过离子束沉积沉积介电层。 然后执行第二离子铣削以去除未被掩模保护的钉扎层结构的部分，在通过介电层进行第二离子铣削期间保护自由层。

公开(公告)号：US08615868B2

公开(公告)日：2013-12-31

申请号：US13306887

申请日：2011-11-29

申请人： Yongchul Ahn ,  Xiaozhong Dang ,  Quang Le ,  Simon H. Liao

发明人： Yongchul Ahn ,  Xiaozhong Dang ,  Quang Le ,  Simon H. Liao

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3193 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for manufacturing a magnetic sensor that includes depositing a plurality of mask layers, then forming a stripe height defining mask over the sensor layers. A first ion milling is performed just sufficiently to remove portions of the free layer that are not protected by the stripe height defining mask, the first ion milling being terminated at the non-magnetic barrier or spacer layer. A dielectric layer is then deposited, preferably by ion beam deposition. A second ion milling is then performed to remove portions of the pinned layer structure that are not protected by the mask, the free layer being protected during the second ion milling by the dielectric layer.

摘要翻译： 一种用于制造磁传感器的方法，包括沉积多个掩模层，然后在传感器层上形成条纹高度限定掩模。 执行第一离子铣削足以除去未被条形高度限定掩模保护的自由层的部分，第一离子铣削在非磁性阻挡层或间隔层处终止。 然后优选通过离子束沉积沉积介电层。 然后执行第二离子铣削以去除未被掩模保护的钉扎层结构的部分，在通过介电层进行第二离子铣削期间保护自由层。

公开(公告)号：US20110007552A1

公开(公告)日：2011-01-13

申请号：US12502224

申请日：2009-07-13

申请人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

发明人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

IPC分类号： G11C11/00 ,  G11C5/14

CPC分类号： G11C13/0007 ,  G11C13/003 ,  G11C13/0059 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/78 ,  G11C2213/79

摘要： Apparatus and method for providing overcurrent protection to a resistive random access memory (RRAM) cell during an RRAM formation process used to prepare the cell for normal read and write operations. In accordance with various embodiments, the RRAM cell is connected between a first control line and a second control line, and an active protection device (APD) is connected between the second control line and an electrical ground terminal. A formation current is applied through the RRAM cell, and an activation voltage is concurrently applied to the APD to maintain a maximum magnitude of the formation current below a predetermined threshold level

摘要翻译： 在用于准备用于正常读写操作的单元的RRAM形成过程期间，向电阻随机存取存储器（RRAM）单元提供过电流保护的装置和方法。 根据各种实施例，RRAM单元连接在第一控制线和第二控制线之间，并且主动保护装置（APD）连接在第二控制线和电接地端之间。 通过RRAM单元施加形成电流，并且激活电压同时施加到APD以将形成电流的最大幅度维持在预定阈值水平以下

公开(公告)号：US08227783B2

公开(公告)日：2012-07-24

申请号：US12501533

申请日：2009-07-13

申请人： Andreas Roelofs ,  Markus Siegert ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Yongchul Ahn ,  Muralikrishnan Balakrishnan ,  Olle Heinonen

发明人： Andreas Roelofs ,  Markus Siegert ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Yongchul Ahn ,  Muralikrishnan Balakrishnan ,  Olle Heinonen

IPC分类号： H01L29/02

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1608

摘要： A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.

摘要翻译： 电阻式感测存储单元包括一层结晶的镨钙锰氧化物和一层无定形的镨钙锰氧化物，其设置在形成电阻式感测存储堆的结晶镨钙锰氧化物层上。 第一和第二电极由电阻式感测存储器堆分隔开。 电阻式感测存储单元还可以包括从无定形镨钙锰氧化物层的层分离结晶镨钙锰氧化物层的氧扩散阻挡层。 方法包括沉积形成电阻式感测存储器叠层的结晶镨钙锰氧化物层上的无定形镨钙锰氧化物。