Testing through-silicon-vias
    2.
    发明授权

    公开(公告)号:US11004530B2

    公开(公告)日:2021-05-11

    申请号:US16378304

    申请日:2019-04-08

    Applicant: RAMBUS INC.

    Abstract: Embodiments generally relate to integrated circuit devices having through silicon vias (TSVs). In one embodiment, an integrated circuit (IC) device includes a field of TSVs and an address decoder that selectably couples at least one of the TSVs to at least one of a test input and a test evaluation circuit. In another embodiment, a method includes selecting one or more TSVs from a field of TSVs in at least one IC device, and coupling each selected TSV to at least one of a test input and a test evaluation circuit.

    Testing through-silicon-vias
    3.
    发明授权

    公开(公告)号:US10262750B2

    公开(公告)日:2019-04-16

    申请号:US15393634

    申请日:2016-12-29

    Applicant: RAMBUS INC.

    Abstract: Embodiments generally relate to integrated circuit devices having through silicon vias (TSVs). In one embodiment, an integrated circuit (IC) device includes a field of TSVs and an address decoder that selectably couples at least one of the TSVs to at least one of a test input and a test evaluation circuit. In another embodiment, a method includes selecting one or more TSVs from a field of TSVs in at least one IC device, and coupling each selected TSV to at least one of a test input and a test evaluation circuit.

    Testing through-silicon-vias
    4.
    发明授权

    公开(公告)号:US11600349B2

    公开(公告)日:2023-03-07

    申请号:US17226216

    申请日:2021-04-09

    Applicant: RAMBUS INC.

    Abstract: Embodiments generally relate to integrated circuit devices having through silicon vias (TSVs). In one embodiment, an integrated circuit (IC) device includes a field of TSVs and an address decoder that selectably couples at least one of the TSVs to at least one of a test input and a test evaluation circuit. In another embodiment, a method includes selecting one or more TSVs from a field of TSVs in at least one IC device, and coupling each selected TSV to at least one of a test input and a test evaluation circuit.

    TESTING THROUGH-SILICON-VIAS
    5.
    发明申请

    公开(公告)号:US20190259464A1

    公开(公告)日:2019-08-22

    申请号:US16378304

    申请日:2019-04-08

    Applicant: RAMBUS INC.

    Abstract: Embodiments generally relate to integrated circuit devices having through silicon vias (TSVs). In one embodiment, an integrated circuit (IC) device includes a field of TSVs and an address decoder that selectably couples at least one of the TSVs to at least one of a test input and a test evaluation circuit. In another embodiment, a method includes selecting one or more TSVs from a field of TSVs in at least one IC device, and coupling each selected TSV to at least one of a test input and a test evaluation circuit.

    TESTING THROUGH-SILICON-VIAS
    6.
    发明申请

    公开(公告)号:US20210233599A1

    公开(公告)日:2021-07-29

    申请号:US17226216

    申请日:2021-04-09

    Applicant: RAMBUS INC.

    Abstract: Embodiments generally relate to integrated circuit devices having through silicon vias (TSVs). In one embodiment, an integrated circuit (IC) device includes a field of TSVs and an address decoder that selectably couples at least one of the TSVs to at least one of a test input and a test evaluation circuit. In another embodiment, a method includes selecting one or more TSVs from a field of TSVs in at least one IC device, and coupling each selected TSV to at least one of a test input and a test evaluation circuit.

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