公开(公告)号：US3731180A

公开(公告)日：1973-05-01

申请号：US3731180D

申请日：1972-03-13

Applicant: RCA CORP

Inventor： NAPOLI L ,  HUGHES J

IPC: H03B19/05 ,  H03B19/18 ,  H02M5/30 ,  H01P3/08

CPC classification number: H03B19/18 ,  H02M2007/4818 ,  Y02B70/1441

Abstract: The reactance of an active element exhibiting a nonlinear current-voltage characteristic in response to an applied input signal and generating an output signal at a desired frequency is incorporated as part of a circuit resonant at both the frequency of the applied input signal and of the output signal.

Abstract translation: 响应于所施加的输入信号而产生非线性电流 - 电压特性并产生期望频率的输出信号的有源元件的电抗被并入作为施加的输入信号和输出的频率的电路谐振的一部分 信号。

公开(公告)号：US3716429A

公开(公告)日：1973-02-13

申请号：US3716429D

申请日：1970-06-18

Applicant: RCA CORP

Inventor： NAPOLI L ,  HUGHES J

IPC: H01L21/00 ,  H01L21/308 ,  H01L29/00 ,  H01L7/00

CPC classification number: H01L21/00 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/00 ,  Y10S148/051 ,  Y10S438/944 ,  Y10S438/977

Abstract: Semiconductor devices having thin bodies of a semiconductor material are made from a wafer of the semiconductor material which is thicker than the bodies of the devices. The thicker wafer is provided with spaced thinner portions of the desired area and thickness of the bodies of the devices to be formed by etching recesses in one surface of the wafer. The recesses are formed with flat bottoms which are of the desired area of the bodies of the devices. A masking layer is coated on the bottom of each of the recesses. The active region of each of the devices is formed at the other surface of the wafer over each of the recesses. The semiconductor material between the thin portions of the wafer is then removed by etching the wafer from the one surface of the wafer so as to separate the thin portions of the wafer to form the individual devices. During the last etching process the masking layers on the bottom of the recess protect the thin portions of the wafer from being etched.

Abstract translation: 具有薄半导体材料的半导体器件由半导体材料的晶片制成，该晶片比器件的主体更厚。 较厚的晶片设置有通过蚀刻晶片的一个表面中的凹槽而形成的器件主体的所需区域和厚度的间隔的较薄部分。 凹部形成有平坦的底部，其具有装置的主体的期望区域。 掩模层涂覆在每个凹部的底部。 每个器件的有源区域形成在每个凹槽上的晶片的另一个表面上。 然后通过从晶片的一个表面蚀刻晶片来移除晶片的薄部分之间的半导体材料，以便分离晶片的薄部分以形成各个器件。 在最后的蚀刻工艺期间，凹部底部的掩模层保护晶片的薄部分不被蚀刻。

公开(公告)号：US3856591A

公开(公告)日：1974-12-24

申请号：US37360073

申请日：1973-06-25

Applicant: RCA CORP

Inventor： NAPOLI L ,  HUGHES J

IPC: H01L21/00 ,  H01L21/285 ,  H01L21/60 ,  H01L23/482 ,  H01L29/00 ,  H01L7/50

CPC classification number: H01L23/482 ,  H01L21/00 ,  H01L21/28575 ,  H01L24/80 ,  H01L29/00 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/30105 ,  Y10S438/928 ,  Y10S438/945 ,  H01L2924/00

Abstract: A beam lead device which can be made extremely thin and with an extremely narrow cross sectional area is presented. The beam lead device has elongated metal contacts on its top and bottom surfaces which overhang the surfaces and which are angularly disposed from one another so as to form an X. Also presented is the method for making such a beam lead device which includes the steps of preparing an appropriately-doped piece of semiconductor material, depositing elongated metal contacts upon the top and bottom surfaces of the semiconductor material, and then etching through the semiconductor material with its portions of the top and bottom contacts which intersect one another acting as a mask and protecting the semiconductor device during the etching procedure. The disclosed method of forming a beam lead device eliminates critical alignment of masks and also provides a simplified method of making such a device.

Abstract translation: 提出了一种能够制成非常薄且横截面非常窄的横梁引导装置。 光束引导装置在其顶表面和底表面上具有细长的金属触点，该金属触点伸出表面并彼此成角度地设置，以形成X。

公开(公告)号：US3792385A

公开(公告)日：1974-02-12

申请号：US3792385D

申请日：1972-11-06

Applicant: RCA CORP

Inventor： NAPOLI L ,  HUGHES J

IPC: H01P5/04 ,  H01P1/00

CPC classification number: H01P5/04

Abstract: A movable magnetic tuning slug capacitively coupled to both the center conductor and outer conductor of an electromagnetic transmission line is used to provide a desired transmission line impedance in response to an applied magnetic field.

Abstract translation: 使用电容耦合到电磁传输线的中心导体和外导体的可移动磁调节段，以响应所施加的磁场提供期望的传输线阻抗。