公开(公告)号：US3722044A

公开(公告)日：1973-03-27

申请号：US3722044D

申请日：1971-11-10

Applicant: RCA CORP

Inventor： LAW H

IPC: H01J9/14 ,  H01J29/80 ,  H01J29/86 ,  H01J9/18

CPC classification number: H01J29/803

Abstract: Prior to assembly of the envelope of a focus grill tube, the cup-shaped panel portion of the envelope is wound with a wire helix which is disposed around and along the panel, each turn of the helix extending across the open side of the panel in predisposed relation with a pattern of phosphor strips on the bottom wall of the panel. Preferably, the helix turns are disposed in grooves in the end surface of the side wall of the panel, and portions of each helix turn are disposed about a member having a thermal expansion greater than that of the helix wire.

Abstract translation: 在组装焦点格栅管的外壳之前，外壳的杯形面板部分用设置在面板周围和沿着面板的线螺旋缠绕，螺旋线的每一圈在面板的开口侧延伸 与面板底壁上的荧光条的图案的倾向关系。 优选地，螺旋匝设置在面板的侧壁的端表面中的凹槽中，并且每个螺旋匝的部分围绕具有大于螺旋线的热膨胀的构件设置。

公开(公告)号：US3770434A

公开(公告)日：1973-11-06

申请号：US3770434D

申请日：1971-10-15

Applicant: RCA CORP

Inventor： LAW H

IPC: H01J9/14 ,  G03C5/00

CPC classification number: H01J9/144

Abstract: Each of the final-sized apertures of an apertured-mask for a cathode-ray tube is closed with a film of an organic material. The central portion of the film closing each final-sized aperture is then opened so as to provide a temporary aperture smaller than the final-sized aperture. An image-screen structure is then photodeposited using the mask with the smaller temporary apertures as a photographic master. After the screen structure is deposited, the organic material is removed to restore the permanent mask with the larger final-sized apertures therein for use in the cathode-ray tube.

Abstract translation: 用于阴极射线管的孔径掩模的每个最终尺寸的孔用有机材料的膜封闭。 然后打开关闭每个最终尺寸孔径的膜的中心部分，以便提供小于最终尺寸孔径的临时孔径。 然后使用具有较小临时孔的掩模将图像屏幕结构作为照相母版进行光沉积。 在沉积屏幕结构之后，去除有机材料以恢复其中具有较大最终尺寸的孔的永久掩模，用于阴极射线管。

公开(公告)号：US3753816A

公开(公告)日：1973-08-21

申请号：US3753816D

申请日：1971-11-18

Applicant: RCA CORP

Inventor： FELDSTEIN N ,  LAW H

IPC: C23C18/18 ,  G03F1/72 ,  H05K1/03 ,  H05K3/06 ,  H05K3/10 ,  H05K3/18 ,  H05K3/22 ,  C23F1/02 ,  C23F17/00

CPC classification number: G03F1/72 ,  C23C18/1605 ,  H05K1/0306 ,  H05K3/062 ,  H05K3/108 ,  H05K3/181 ,  H05K3/225 ,  H05K2201/0344 ,  H05K2203/0542 ,  H05K2203/072 ,  Y10T29/49156 ,  Y10T29/49746

Abstract: The method comprises depositing a thin layer of a first metal having a relatively high degree of solubility in a particular etchant over both plated areas (if a previously deposited pattern is being repaired) and unplated areas on a substrate, this first metal being catalytic to electroless deposition of a second metal to be subsequently deposited, electrolessly depositing on the first metal either an overall pattern of areas of a second metal which has a relatively low degree of solubility in the etchant or a pattern limited to parts of a previously deposited pattern that were missing or incompletely formed, and then treating the plated areas with the etchant, where desired, so that the first metal is removed where it is not covered by the second metal but the second metal is substantially unaffected.

Abstract translation: 该方法包括在两个镀覆区域（如果先前沉积的图案被修复）和在基底上未镀覆的区域上沉积具有相对较高溶解度的第一金属薄层，该第一金属在特定的蚀刻剂上催化以无电化 沉积待随后沉积的第二金属，在第一金属上无电沉积第二金属的整体图案，其在蚀刻剂中具有相对较低溶解度的第二金属的区域或限于先前沉积图案的部分的图案， 丢失或不完全形成，然后在需要时用蚀刻剂处理镀覆区域，使得第一金属在不被第二金属覆盖但第二金属基本上不受影响的情况下被去除。