公开(公告)号：US20160071850A1

公开(公告)日：2016-03-10

申请号：US14931235

申请日：2015-11-03

Applicant: Renesas Electronics Corporation

Inventor： Misato SAKAMOTO ,  Yoshitake KATO ,  Youichi YAMAMOTO ,  Hitoshi KASAI ,  Satoshi ITOU

IPC: H01L27/108

CPC classification number: H01L27/10808 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02189 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/3212 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888 ,  H01L28/60 ,  H01L28/87 ,  H01L28/91

Abstract: A capacitive element has improved electrical properties. The capacitive element is configured in a DRAM cell and has a lower electrode, a capacitive insulator film formed over the lower electrode, and an upper electrode formed over the capacitive insulator film. The upper electrode has a structure in which from the capacitive insulator film side of this electrode, a first upper electrode, a second upper electrode and a third upper electrode are stacked in turn. The third upper electrode is a tungsten film that may contain an impurity. Between the first and third upper electrodes, the second upper electrode is interposed which is a barrier film for preventing the possible impurity in the third upper electrode from diffusing into the capacitive insulator film.

Abstract translation: 电容元件具有改善的电性能。 电容元件配置在DRAM单元中，并且具有下电极，形成在下电极上的电容绝缘膜，以及形成在电容绝缘膜上的上电极。 上部电极具有从该电极的电容绝缘膜侧，第一上部电极，第二上部电极和第三上部电极依次层叠的结构。 第三上电极是可能含有杂质的钨膜。 在第一和第三上部电极之间，插入第二上部电极，其是用于防止第三上部电极中可能的杂质扩散到电容绝缘膜中的阻挡膜。

公开(公告)号：US20150270271A1

公开(公告)日：2015-09-24

申请号：US14661734

申请日：2015-03-18

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Misato SAKAMOTO ,  Yoshitake KATO ,  Youichi YAMAMOTO ,  Hitoshi KASAI ,  Satoshi ITOU

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/321 ,  H01L49/02 ,  H01L21/285

CPC classification number: H01L27/10808 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02189 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/3212 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888 ,  H01L28/60 ,  H01L28/87 ,  H01L28/91

Abstract: A capacitive element has improved electrical properties. The capacitive element is configured in a DRAM cell and has a lower electrode, a capacitive insulator film formed over the lower electrode, and an upper electrode formed over the capacitive insulator film. The upper electrode has a structure in which from the capacitive insulator film side of this electrode, a first upper electrode, a second upper electrode and a third upper electrode are stacked in turn. The third upper electrode is a tungsten film that may contain an impurity. Between the first and third upper electrodes, the second upper electrode is interposed which is a barrier film for preventing the possible impurity in the third upper electrode from diffusing into the capacitive insulator film.

Abstract translation: 电容元件具有改善的电性能。 电容元件配置在DRAM单元中，并且具有下电极，形成在下电极上的电容绝缘膜，以及形成在电容绝缘膜上的上电极。 上部电极具有从该电极的电容绝缘膜侧，第一上部电极，第二上部电极和第三上部电极依次层叠的结构。 第三上电极是可能含有杂质的钨膜。 在第一和第三上部电极之间，插入第二上部电极，其是用于防止第三上部电极中可能的杂质扩散到电容绝缘膜中的阻挡膜。