公开(公告)号：US20140239377A1

公开(公告)日：2014-08-28

申请号：US14188131

申请日：2014-02-24

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukio NISHIDA ,  Tomohiro Yamashita

IPC: H01L29/792 ,  H01L21/28

CPC classification number: H01L29/792 ,  H01L21/28008 ,  H01L21/28282 ,  H01L27/11563 ,  H01L27/11573 ,  H01L29/0653 ,  H01L29/42344 ,  H01L29/66833

Abstract: To enhance the performance of a semiconductor device. In a method for manufacturing a semiconductor device, a metal film is formed over a semiconductor substrate having an insulating film formed on a surface thereof, and then the metal film is removed in a memory cell region, whereas, in a part of a peripheral circuit region, the metal film is left. Next, a silicon film is formed over the semiconductor substrate, then the silicon film is patterned in the memory cell region, and, in the peripheral circuit region, the silicon film is left so that an outer peripheral portion of the remaining metal film is covered with the silicon film. Subsequently, in the peripheral circuit region, the silicon film, the metal film, and the insulating film are patterned for forming an insulating film portion formed of the insulating film, a metal film portion formed of the metal film, and a conductive film portion formed of the silicon film.

Abstract translation: 提高半导体器件的性能。 在制造半导体器件的方法中，在其表面上形成有绝缘膜的半导体衬底上形成金属膜，然后在存储单元区域中去除金属膜，而在外围电路的一部分中 区域，剩下金属膜。 接下来，在半导体衬底上形成硅膜，然后在存储单元区域中对硅膜进行构图，并且在外围电路区域中留下硅膜使剩余金属膜的外周部分被覆盖 与硅膜。 随后，在外围电路区域中，图案化硅膜，金属膜和绝缘膜，以形成由绝缘膜形成的绝缘膜部分，由金属膜形成的金属膜部分和形成的导电膜部分 的硅膜。

公开(公告)号：US20160172509A1

公开(公告)日：2016-06-16

申请号：US15048791

申请日：2016-02-19

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukio NISHIDA ,  Tomohiro YAMASHITA

IPC: H01L29/792 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L29/792 ,  H01L21/28008 ,  H01L21/28282 ,  H01L27/11563 ,  H01L27/11573 ,  H01L29/0653 ,  H01L29/42344 ,  H01L29/66833

Abstract: To enhance the performance of a semiconductor device. In a method for manufacturing a semiconductor device, a metal film is formed over a semiconductor substrate having an insulating film formed on a surface thereof, and then the metal film is removed in a memory cell region, whereas, in a part of a peripheral circuit region, the metal film is left. Next, a silicon film is formed over the semiconductor substrate, then the silicon film is patterned in the memory cell region, and, in the peripheral circuit region, the silicon film is left so that an outer peripheral portion of the remaining metal film is covered with the silicon film. Subsequently, in the peripheral circuit region, the silicon film, the metal film, and the insulating film are patterned for forming an insulating film portion formed of the insulating film, a metal film portion formed of the metal film, and a conductive film portion formed of the silicon film.

Abstract translation: 提高半导体器件的性能。 在制造半导体器件的方法中，在其表面上形成有绝缘膜的半导体衬底上形成金属膜，然后在存储单元区域中去除金属膜，而在外围电路的一部分中 区域，剩下金属膜。 接下来，在半导体衬底上形成硅膜，然后在存储单元区域中对硅膜进行构图，并且在外围电路区域中留下硅膜使剩余金属膜的外周部分被覆盖 与硅膜。 随后，在外围电路区域中，图案化硅膜，金属膜和绝缘膜，以形成由绝缘膜形成的绝缘膜部分，由金属膜形成的金属膜部分和形成的导电膜部分 的硅膜。

公开(公告)号：US20150206920A1

公开(公告)日：2015-07-23

申请号：US14537633

申请日：2014-11-10

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yuki YAMAMOTO ,  Yukio NISHIDA ,  Tomohiro YAMASHITA

IPC: H01L27/148

CPC classification number: H01L27/14689 ,  H01L21/265 ,  H01L21/324 ,  H01L21/76897 ,  H01L27/10876 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14641 ,  H01L27/14812 ,  H01L27/14831 ,  H01L27/14887 ,  H01L29/1091 ,  H01L29/42396

Abstract: The performance of a semiconductor device is improved by preventing 1/f noise from being generated in a peripheral transistor, in the case where the occupation area of photodiodes, which are included in each of a plurality of pixels that form an image pickup device, is expanded. In the semiconductor device, the gate electrode of an amplification transistor is formed by both a gate electrode part over an active region and a large width part that covers the boundary between the active region and an element isolation region and the active region near the boundary and that. has a gate length larger than that of the gate electrode part.

Abstract translation: 在包括在形成图像拾取装置的多个像素中的每一个中的光电二极管的占有面积为（...）的情况下，通过防止在外围晶体管中产生1 / f噪声来提高半导体器件的性能 扩大了 在半导体器件中，放大晶体管的栅电极由有源区上的栅电极部分和覆盖有源区和元件隔离区之间的边界的大宽度部分和边界附近的有源区两者形成， 那。 栅极长度大于栅电极部分的栅极长度。

公开(公告)号：US20160099286A1

公开(公告)日：2016-04-07

申请号：US14970345

申请日：2015-12-15

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yuki YAMAMOTO ,  Yukio NISHIDA ,  Tomohiro YAMASHITA

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L21/265 ,  H01L21/324 ,  H01L21/76897 ,  H01L27/10876 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14641 ,  H01L27/14812 ,  H01L27/14831 ,  H01L27/14887 ,  H01L29/1091 ,  H01L29/42396

Abstract: The performance of a semiconductor device is improved by preventing 1/f noise from being generated in a peripheral transistor, in the case where the occupation area of photodiodes, which are included in each of a plurality of pixels that form an image pickup device, is expanded. In the semiconductor device, the gate electrode of an amplification transistor is formed by both a gate electrode part over an active region and a large width part that covers the boundary between the active region and an element isolation region and the active region near the boundary and that has a gate length larger than that of the gate electrode part.

Abstract translation: 在包括在形成图像拾取装置的多个像素中的每一个中的光电二极管的占有面积为（...）的情况下，通过防止在外围晶体管中产生1 / f噪声来提高半导体器件的性能 扩大了 在半导体器件中，放大晶体管的栅电极由有源区上的栅电极部分和覆盖有源区和元件隔离区之间的边界的大宽度部分和边界附近的有源区两者形成， 其栅极长度大于栅电极部分的栅极长度。