公开(公告)号：US20240282583A1

公开(公告)日：2024-08-22

申请号：US18568637

申请日：2022-06-02

申请人： RESONAC CORPORATION

发明人： Jumpei IWASAKI ,  Kazuma MATSUI

IPC分类号： H01L21/311

CPC分类号： H01L21/31122

摘要： Provided is a dry etching method capable of selectively etching an etching object containing lanthanum as compared with a non-etching object at a sufficient etching rate without plasma. The dry etching method includes a dry etching step of bringing an etching gas containing nitrosyl fluoride into contact with a member to be etched (12) having an etching object that is to be etched by the etching gas and having a non-etching object that is not to be etched by the etching gas, to selectively etch the etching object as compared with the non-etching object without plasma. The etching object contains lanthanum.

公开(公告)号：US20230395389A1

公开(公告)日：2023-12-07

申请号：US18032486

申请日：2021-10-12

申请人： Resonac Corporation

发明人： Jumpei IWASAKI ,  Yosuke TANIMOTO ,  Kazuma MATSUI

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01L21/3065 ,  H01J2237/3346

摘要： An etching method including an etching step of bringing an etching gas which contains nitrosyl fluoride and has been converted into plasma into contact with a member to be etched (9) having an etching object and a non-etching object, and selectively etching the etching object as compared with the non-etching object. The etching step is performed in a chamber (7) containing the member to be etched (9) using a remote plasma generation device (16) provided outside the chamber (7) as a plasma generation source. The concentration of nitrosyl fluoride in the etching gas is 0.3 vol % or more, the temperature condition of the etching step is 0° C. to 250° C., and the pressure condition of the etching step is 100 Pa or more and 3 kPa or less. The etching object includes silicon nitride. Also disclosed is a method for producing a semiconductor device using the etching method.

公开(公告)号：US20240363356A1

公开(公告)日：2024-10-31

申请号：US18682767

申请日：2022-07-05

申请人： Resonac Corporation

发明人： Kazuma MATSUI

IPC分类号： H01L21/3065 ,  C09K13/00

CPC分类号： H01L21/3065 ,  C09K13/00

摘要： There is provided an etching method capable of selectively etching an etching object as compared with a non-etching object. An etching method includes an etching step of bringing an etching gas containing nitrosyl fluoride into contact with a member to be etched (12) having an etching object subject to etching by the etching gas and a non-etching object not subject to etching by the etching gas, and selectively etching the etching object as compared with the non-etching object without using plasma. The etching object contains at least one of silicon and silicon germanium represented by the chemical formula Si1-xGex and the non-etching object contains at least one of germanium and silicon germanium represented by the chemical formula Si1-yGey. In both the chemical formulae, x is 0 or more and less than 1, y is more than 0 and 1 or less, and x is smaller than y.

公开(公告)号：US20240249952A1

公开(公告)日：2024-07-25

申请号：US18562082

申请日：2022-03-30

申请人： Resonac Corporation

发明人： Kazuma MATSUI

IPC分类号： H01L21/311

CPC分类号： H01L21/31116

摘要： Provided is an etching method capable of selectively etching an etching object containing silicon nitride as compared with a non-etching object while the generation of particles and a variation in etching rate are suppressed. The etching method includes an etching step of bringing an etching gas containing more than 20% by volume of nitrosyl fluoride into contact with a member to be etched (12) having an etching object that is to be etched by the etching gas and having a non-etching object that is not to be etched by the etching gas, to selectively etch the etching object as compared with the non-etching object without plasma. The etching object contains silicon nitride.

公开(公告)号：US20240228409A1

公开(公告)日：2024-07-11

申请号：US18562141

申请日：2022-03-28

申请人： Resonac Corporation

发明人： Kazuma MATSUI

IPC分类号： C07C17/20 ,  B01J23/10 ,  B01J23/745 ,  B01J23/75 ,  B01J23/755 ,  B01J27/125 ,  B01J27/128

CPC分类号： C07C17/204 ,  B01J23/10 ,  B01J23/745 ,  B01J23/75 ,  B01J23/755 ,  B01J27/125 ,  B01J27/128 ,  C07C17/208

摘要： There is provided a method for producing bromofluoromethane capable of selectively synthesizing at least one of tribromofluoromethane and dibromodifluoromethane. The method for producing bromofluoromethane includes: a fluorination step of reacting a fluorinating agent with a raw-material compound which is at least one of carbon tetrabromide and tribromofluoromethane for fluorination in the presence of a simple substance or a salt of a metal belonging to the third period or the fourth period and belonging to any of Group III to Group XIII of the periodic table to synthesize a target compound which is at least one of tribromofluoromethane and dibromodifluoromethane. The raw-material compound and the target compound are not the same.

公开(公告)号：US20240105466A1

公开(公告)日：2024-03-28

申请号：US18273605

申请日：2021-12-14

申请人： Resonac Corporation

发明人： Kazuma MATSUI ,  Yuki OKA ,  Moe TANIWAKI

IPC分类号： H01L21/3213 ,  H01L21/311

CPC分类号： H01L21/32136 ,  H01L21/31122

摘要： A method for forming a pattern of metal oxide capable of selectively etching an etching object containing metal oxide relative to a non-etching object and forming a pattern of the metal oxide along a pattern of the non-etching object serving as a template. Metal oxide containing oxide of at least one of tin and indium is etched using an etching gas to form the pattern of the metal oxide. An etching gas containing halon is brought into contact with a member to be etched in the presence of plasma, and etching is performed while a bias power is applied to a lower electrode (2) supporting the member to be etched to selectively etch a metal oxide layer (22) relative to a silicon substrate (24), a template layer (21), and an underlying layer (23), and the predetermined pattern of the template layer (21) is transferred to the metal oxide layer (22).