公开(公告)号：US20150200189A1

公开(公告)日：2015-07-16

申请号：US14595451

申请日：2015-01-13

Applicant: RF Micro Devices, Inc.

Inventor： Douglas Andrew Teeter ,  Ming Ji ,  Bhavin Shah ,  Mohsen Haji-Rahim ,  William Kent Braxton

IPC: H01L25/18 ,  H03F3/213 ,  H01L23/00 ,  H01L21/66 ,  H01L23/367 ,  H03F3/195 ,  H01L25/00

CPC classification number: H01L25/18 ,  H01L23/4012 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/043 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/0756 ,  H01L25/50 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48106 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49096 ,  H01L2224/49111 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/141 ,  H01L2924/143 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/2064 ,  H03F3/195 ,  H03F2200/531 ,  H01L2924/20753 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Disclosed is an integrated circuit module that includes a first die having a plurality of hot regions and at least one cool region when operating under normal conditions. The first die with a top surface includes at least one power amplifier that resides in the plurality of hot regions. The integrated circuit module also includes a second die. The second die has a bottom surface, which is adhered to the top surface of the first die, wherein any portion of the bottom surface of the second die that is adhered to the top surface of the first die resides exclusively on the at least one cool region. In at least one embodiment, the first die is an RF power amplifier die and the second die is a controller die having control circuitry configured to control the at least one power amplifier that is an RF power amplifier type.

Abstract translation: 公开了一种集成电路模块，其包括具有多个热区域的第一管芯和在正常条件下操作时的至少一个冷却区域。 具有顶表面的第一管芯包括驻留在多个热区域中的至少一个功率放大器。 集成电路模块还包括第二管芯。 第二模具具有底表面，其粘附到第一模具的顶表面，其中粘附到第一模具的顶表面的第二模具的底表面的任何部分仅在至少一个冷却 地区。 在至少一个实施例中，第一裸片是RF功率放大器芯片，而第二裸片是具有控制电路的控制器芯片，控制电路配置成控制作为RF功率放大器类型的至少一个功率放大器。

公开(公告)号：US09583471B2

公开(公告)日：2017-02-28

申请号：US14595451

申请日：2015-01-13

Applicant: RF Micro Devices, Inc.

Inventor： Douglas Andrew Teeter ,  Ming Ji ,  Bhavin Shah ,  Mohsen Haji-Rahim ,  William Kent Braxton

IPC: H01L25/04 ,  H01L25/065 ,  H01L25/18 ,  H03F3/195 ,  H01L25/00 ,  H01L23/00 ,  H01L23/40 ,  H01L25/075 ,  H01L23/66

CPC classification number: H01L25/18 ,  H01L23/4012 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/043 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/0756 ,  H01L25/50 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48106 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49096 ,  H01L2224/49111 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/141 ,  H01L2924/143 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/2064 ,  H03F3/195 ,  H03F2200/531 ,  H01L2924/20753 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Disclosed is an integrated circuit module that includes a first die having a plurality of hot regions and at least one cool region when operating under normal conditions. The first die with a top surface includes at least one power amplifier that resides in the plurality of hot regions. The integrated circuit module also includes a second die. The second die has a bottom surface, which is adhered to the top surface of the first die, wherein any portion of the bottom surface of the second die that is adhered to the top surface of the first die resides exclusively on the at least one cool region. In at least one embodiment, the first die is an RF power amplifier die and the second die is a controller die having control circuitry configured to control the at least one power amplifier that is an RF power amplifier type.

Abstract translation: 公开了一种集成电路模块，其包括具有多个热区域的第一管芯和在正常条件下操作时的至少一个冷却区域。 具有顶表面的第一管芯包括驻留在多个热区域中的至少一个功率放大器。 集成电路模块还包括第二管芯。 第二模具具有底表面，其粘附到第一模具的顶表面，其中粘附到第一模具的顶表面的第二模具的底表面的任何部分仅在至少一个冷却 地区。 在至少一个实施例中，第一裸片是RF功率放大器芯片，而第二裸片是具有控制电路的控制器芯片，控制电路配置成控制作为RF功率放大器类型的至少一个功率放大器。