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公开(公告)号:US20160351509A1
公开(公告)日:2016-12-01
申请号:US15080001
申请日:2016-03-24
Applicant: RF Micro Devices, Inc.
Inventor: Thong Dang , Dan Carey , Ma Shirley Asoy
IPC: H01L23/552 , H01L21/78 , H01L21/768 , H01L21/3105 , H01L21/48 , H01L21/683 , H01L21/56 , H01L21/3205 , H01L25/00 , H01L25/065 , H01L23/31 , H01L21/268
CPC classification number: H01L23/552 , H01L21/268 , H01L21/31058 , H01L21/4817 , H01L21/485 , H01L21/4853 , H01L21/4857 , H01L21/561 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L23/3128 , H01L23/3157 , H01L23/49811 , H01L23/49822 , H01L23/49838 , H01L23/49866 , H01L23/49894 , H01L24/19 , H01L24/96 , H01L24/97 , H01L25/0655 , H01L25/50 , H01L2221/68331 , H01L2224/04105 , H01L2224/12105
Abstract: The present disclosure integrates electromagnetic shielding into a wafer level fan-out packaging process. First, a mold wafer having multiple modules is provided. Each module includes a die with an I/O port and is surrounded by an inter-module area. A redistribution structure that includes a shield connected element coupled to the I/O port of each module is formed over a bottom surface of the mold wafer. The shield connected element extends laterally from the I/O port into the inter-module area for each module. Next, the mold wafer is sub-diced at each inter-module area to create a cavity. A portion of the shield connected element is then exposed through the bottom of each cavity. A shielding structure is formed over a top surface of the mold wafer and exposed faces of each cavity. The shielding structure is in contact with the shield connected element.
Abstract translation: 本公开将电磁屏蔽集成到晶片级扇出封装工艺中。 首先,提供具有多个模块的模具晶片。 每个模块包括一个具有I / O端口的模块,并被模块间区域包围。 包括耦合到每个模块的I / O端口的屏蔽连接元件的再分配结构形成在模具晶片的底表面上。 屏蔽连接元件从I / O端口横向延伸到每个模块的模块间区域。 接下来,在每个模块间区域对模具晶片进行子切割以形成空腔。 屏蔽连接元件的一部分然后通过每个空腔的底部暴露。 在模具晶片的顶表面和每个腔的暴露表面上形成屏蔽结构。 屏蔽结构与屏蔽连接的元件接触。
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公开(公告)号:US09570406B2
公开(公告)日:2017-02-14
申请号:US15080001
申请日:2016-03-24
Applicant: RF Micro Devices, Inc.
Inventor: Thong Dang , Dan Carey , Ma Shirley Asoy
IPC: H01L21/78 , H01L23/552 , H01L23/31 , H01L21/768 , H01L21/3105 , H01L21/268 , H01L21/683 , H01L21/56 , H01L21/3205 , H01L25/00 , H01L25/065 , H01L21/48
CPC classification number: H01L23/552 , H01L21/268 , H01L21/31058 , H01L21/4817 , H01L21/485 , H01L21/4853 , H01L21/4857 , H01L21/561 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L23/3128 , H01L23/3157 , H01L23/49811 , H01L23/49822 , H01L23/49838 , H01L23/49866 , H01L23/49894 , H01L24/19 , H01L24/96 , H01L24/97 , H01L25/0655 , H01L25/50 , H01L2221/68331 , H01L2224/04105 , H01L2224/12105
Abstract: The present disclosure integrates electromagnetic shielding into a wafer level fan-out packaging process. First, a mold wafer having multiple modules is provided. Each module includes a die with an I/O port and is surrounded by an inter-module area. A redistribution structure that includes a shield connected element coupled to the I/O port of each module is formed over a bottom surface of the mold wafer. The shield connected element extends laterally from the I/O port into the inter-module area for each module. Next, the mold wafer is sub-diced at each inter-module area to create a cavity. A portion of the shield connected element is then exposed through the bottom of each cavity. A shielding structure is formed over a top surface of the mold wafer and exposed faces of each cavity. The shielding structure is in contact with the shield connected element.
Abstract translation: 本公开将电磁屏蔽集成到晶片级扇出封装工艺中。 首先,提供具有多个模块的模具晶片。 每个模块包括一个具有I / O端口的模块,并被模块间区域包围。 包括耦合到每个模块的I / O端口的屏蔽连接元件的再分配结构形成在模具晶片的底表面上。 屏蔽连接元件从I / O端口横向延伸到每个模块的模块间区域。 接下来,在每个模块间区域对模具晶片进行子切割以形成空腔。 屏蔽连接元件的一部分然后通过每个空腔的底部暴露。 在模具晶片的顶表面和每个腔的暴露表面上形成屏蔽结构。 屏蔽结构与屏蔽连接的元件接触。
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